JPS61143757A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS61143757A JPS61143757A JP59267949A JP26794984A JPS61143757A JP S61143757 A JPS61143757 A JP S61143757A JP 59267949 A JP59267949 A JP 59267949A JP 26794984 A JP26794984 A JP 26794984A JP S61143757 A JPS61143757 A JP S61143757A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- pattern
- mask
- film
- ray absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 229920001721 polyimide Polymers 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 239000006096 absorbing agent Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000000295 complement effect Effects 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000002835 absorbance Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000178 monomer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 206010011732 Cyst Diseases 0.000 description 3
- 208000031513 cyst Diseases 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910005091 Si3N Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、Ｘ線露光用マスクの吸収層／（ターンの構
成に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of an absorbing layer/(turn) of an X-ray exposure mask.
半導体集積回路等の半導体装置を製造する際、微細パタ
ーン形成のため写真製版技術は必要不可欠であり、最近
では電子ビームあるいはＸ線による露光装置の採用によ
り高精度の微細パターン形成が可能となっている。When manufacturing semiconductor devices such as semiconductor integrated circuits, photolithography technology is indispensable for forming fine patterns, and recently it has become possible to form fine patterns with high precision by adopting exposure equipment that uses electron beams or X-rays. There is.
従来のＸ線３＋１！光用マスクの作成方法の一例を第３
図（＆）〜（ｄ） ”ｋ−照して説明する。まず、揖３
図（ＩＬ）のように（１００）の面方位を持つシリコン
基板１に、膜厚３〜５ μｍで７ Ｘ １０”ｏｎ−”
以上のポロン濃度を持つエピタキシャル層２を形成する
。次に、熱酸化したエツチング１スク３ｔシリコン基板
１の裏面に約３００ＯＡの厚さに形成する。Conventional X-ray 3+1! An example of how to create a light mask is shown in Part 3.
Figures (&) to (d) "k-"
As shown in the figure (IL), a 7 x 10"on-" film with a film thickness of 3 to 5 μm is placed on a silicon substrate 1 with a (100) plane orientation.
The epitaxial layer 2 having the above poron concentration is formed. Next, a thermally oxidized etching film 3t is formed on the back surface of the silicon substrate 1 to a thickness of about 300 OA.
次に、第３図＜ｂ＞のよ５にエピタキシャル層２０表面
にＶジス）Ｙ塗布した後、電子ビーム照射し７５ｒ定の
パターンと相補の関係のＶレストパターン４１５ｒ：形
成する。さらに、Ｘ線吸収体である金層Ｓｆｖレストパ
ターン４上に被着させる。その後。Next, as shown in FIG. 3<b>, after coating the surface of the epitaxial layer 20 with V (di) Y, electron beam irradiation is performed to form a V rest pattern 415r complementary to the constant pattern 75r. Furthermore, it is deposited on the gold layer Sfv rest pattern 4 which is an X-ray absorber. after that.
／シストパターン４ Ｙ ｔｌｌ雌すると、第３図（ｃ
）のように所望のパターン６がエピタキシャル層２上に
形成される。このパターン６はＸ線吸収層となるもので
ある。/ Cyst pattern 4 Y tll female, Figure 3 (c
) A desired pattern 6 is formed on the epitaxial layer 2. This pattern 6 becomes an X-ray absorption layer.
その後、エツチングマスク３ｔマスクとして第３ ＩＮ
（ｄ）のように、シリコン基板１１ａ択エツチング−
ｔｔｉは、Ｘ＠透過層（エピタキシャル層２）および支
愕体７が形成さｉる。After that, the 3rd IN was used as an etching mask 3t mask.
As shown in (d), the silicon substrate 11a is selectively etched.
In tti, an X@transmissive layer (epitaxial layer 2) and a supporting body 7 are formed.
上記のよ５な従来のｘｈｎ光用マスクは、各工程に対し
て１枚ずつ複雑なプロセスを経て作成されており、マス
ク作成の工期か長く作成が容易ではなかった。また、Ｘ
線露光用マスクはサブミクロンのオーダでの微細パター
ン転写に使用され。The above-mentioned conventional xhn light masks are made one by one through a complicated process for each step, and the mask making process takes a long time and is not easy to make. Also, X
Line exposure masks are used to transfer fine patterns on the order of submicrons.
パター７ｆｇＫＮ重ね合わせ精度向上のために高度な技
術が裂開されている。しかし、従来のＸ線露光用マスク
は上記のような作成方法のため、ｌ工程に１枚のマスク
が必要であり、ウェハ転写時の東ね合わせ精度が十分で
はな（、精度よくサメミクロンパターンが転写されなか
った。Putter 7fgKN Advanced technology has been developed to improve alignment accuracy. However, due to the manufacturing method of conventional X-ray exposure masks as described above, one mask is required for each process, and alignment accuracy during wafer transfer is not sufficient (i.e., shark micron patterns cannot be accurately fabricated). was not transcribed.
さらに、Ｘ線露光用マスク作成には厳しいＶシストｖ−
ジョンが要求されるが、現偉時の膨潤などにより高精度
のマスクの作成が困難であった。In addition, V cyst v-
However, it was difficult to create a high-precision mask due to swelling and other factors.
この発明は、上記のような従来の欠点を除去するためＫ
なさＲｆＳもので、Ｘ線吸収特性の異なる物質ｙｔｔＸ
線吸収層として形成し、マスク作成枚数の減少と重ね合
わせ精度の向上を図ったｘｉｉｔｔ元用マスクを提供す
ることを目的としている。In order to eliminate the above-mentioned conventional drawbacks, this invention
RfS material with different X-ray absorption characteristics yttX
It is an object of the present invention to provide a mask for xiitt which is formed as a line-absorbing layer and which reduces the number of masks to be produced and improves overlay accuracy.
この発明に係るＸ線露光用マスクは、Ｘ線透過層上に複
数の各波長におけるＸ線吸収率の異なる物質からなる複
数のｘｉパターンを形成したものである。The X-ray exposure mask according to the present invention has a plurality of xi patterns made of substances having different X-ray absorption rates at a plurality of wavelengths formed on an X-ray transparent layer.
この発明においては、波長の異なるＸ４ｉ！Ｊｌヲ順次
照射すること釦よりＸＭ吸収パターンのＸ線吸収率にし
たがった複数のＸ線吸収パターンが、１枚のＸ１ｓｊ！
光用マスク九よりウェハに転写されることＫなる。In this invention, X4i! Multiple X-ray absorption patterns according to the X-ray absorption rate of the XM absorption pattern are irradiated in sequence by pressing the button, and one sheet of X1sj!
The light is transferred from the optical mask 9 to the wafer.
第１図（１）〜（ｅ）はこの発明の一実施例馨説明する
ための工程図である。まず、第１ 囚（ａ） Ｋ示すよ
うにシリコン基板１０表面に樹脂上／マーを回転塗布し
、さらに、熱処理を行ってＸ線透過層となるポリイミド
膜８ｙｔ形成する。次に、第１図（ｂ）に示すように、
ポリイミド膜ａ上に枠部材９を接層等により固着させる
。次いで、シリコン基板１ｔエツチング等により除去し
ｆｓ後、藁１図（ｃ）に示すようにポリイミド膜８０表
面にＳｉ３Ｎ、（輩化シリコン）からなる第１のＸ線吸
収パターン１０’ｔ’形成する。第１のＸ線吸収パター
ン１０は。FIGS. 1(1) to 1(e) are process diagrams for explaining one embodiment of the present invention. First, as shown in Figure 1 (a) K, a resin coating material is spin-coated on the surface of the silicon substrate 10, and then heat treatment is performed to form a polyimide film 8yt that will become an X-ray transparent layer. Next, as shown in Figure 1(b),
The frame member 9 is fixed onto the polyimide film a by a contact layer or the like. Next, the silicon substrate 1t is removed by etching or the like, and after fs, a first X-ray absorbing pattern 10't' made of Si3N (polymerized silicon) is formed on the surface of the polyimide film 80 as shown in Fig. 1(c). . The first X-ray absorption pattern 10 is.
例えばＣＶＤ法により被膜形成後、Ｐｊ′Ｉ望パターン
を電子ビーム描画した後、エツチングすることにより形
成される。しかる後、フジスト塗布後、電子ビーム照射
し、て所定のパターンと相補の関係のＶレストパターン
１１Ｙ：第１図（ｄ）に示すように形成する。さらに、
Ｘ線吸収体である金層５馨第１図（ｄ）に示すようにレ
ジストパターン１１上に被着させる。その後、Ｖシスト
パターン１１を制能すると、第１図（ｅ）に示すように
ｇ２のＸ線吸収パターン１２が、５ｔ３Ｎ、かもなる第
１のＸ線吸収パターン１０上く形成され、この発明のＸ
線露光用マスクが作成される。For example, it is formed by forming a film by CVD, drawing a desired Pj'I pattern with an electron beam, and then etching. Thereafter, after applying fujisto, electron beam irradiation is performed to form a V rest pattern 11Y complementary to a predetermined pattern as shown in FIG. 1(d). moreover,
A gold layer 5 serving as an X-ray absorber is deposited on the resist pattern 11 as shown in FIG. 1(d). Thereafter, when the V cyst pattern 11 is controlled, an X-ray absorption pattern 12 of g2 is formed on the first X-ray absorption pattern 10 of 5t3N as shown in FIG. X
A line exposure mask is created.
次に、この発明により作成されたＸ線露光用マスクの転
写方法について説明する。まず、Ｘ線源Ｖａ長４．３７
ＡノＰｄ Ｌ、線とすると、ＸｒＩＭ透過層のＸ騨減
波は約０．０６ ｄＢ／μｍであり、第１のＸ線吸収層
である第１のＸＩｖｊ吸収パターン１０のＸ紛減我は０
．３ｄＢ／μｍであり、第２のＸ線吸収層である第２の
Ｘ線吸収パターン１２のＸ！１減放は２０６Ｂ／μｍで
あるため、第２のＸｉ吸収パターン１２のみがウェハに
転写される。Next, a method of transferring an X-ray exposure mask produced according to the present invention will be explained. First, the X-ray source Va length is 4.37
Assuming that AnoPdL is a line, the X wave attenuation of the XrIM transmission layer is approximately 0.06 dB/μm, and the X wave attenuation of the first XIvj absorption pattern 10, which is the first X-ray absorption layer, is 0
．． 3 dB/μm, and the X! of the second X-ray absorption pattern 12 which is the second X-ray absorption layer is 3 dB/μm. Since one emission reduction is 206 B/μm, only the second Xi absorption pattern 12 is transferred to the wafer.
次に、ＸＭ源を波長４４ＡのＣｋ、Ｉ！１１１とすると
。Next, the XM source is connected to Ck, I! of wavelength 44A! If it is 111.
Ｘ線透過層のＸ線減衰は１ ｄＢ／μｍであり、第１の
Ｘ線吸収層である第１のＸ線吸収パターン１０のＸ線減
衰は８０ｄＢ／μｍ％第２のＸ線吸収層である第２のＸ
＃！吸収パターン１２のＸ線減衰は１００ｄＢ／μｍと
なり、第１．第２のＸ線吸収パターン１０．１２がウェ
ハに転写される。The X-ray attenuation of the X-ray transmission layer is 1 dB/μm, and the X-ray attenuation of the first X-ray absorption pattern 10 which is the first X-ray absorption layer is 80 dB/μm%. some second X
#! The X-ray attenuation of the absorption pattern 12 is 100 dB/μm, and the first. A second X-ray absorption pattern 10.12 is transferred to the wafer.
なお、上記実施例では、Ｘ線透過層としてポリイミド、
Ｘ線吸収層としてＳｉ３Ｎ、およびＡｕの場合について
述べたが、これに限定されるものではなく、Ｘ線源の波
長′Ｉｔ変化させ、Ｘ＠吸収に差の生じる物質であれば
何種類でも、また、どのような組み合わせでもよい。ま
た、上記実施例では。In the above embodiment, the X-ray transparent layer is made of polyimide,
Although we have described the case of Si3N and Au as the X-ray absorption layer, it is not limited to this, but any number of materials can be used as long as the wavelength 'It of the X-ray source is changed and the X@ absorption differs. Further, any combination may be used. Moreover, in the above embodiment.
Ｘ線波長４．３７ ＡのＰｄ Ｌ、線と４４人のＣｋ５
線について述べたが、これ以外の波長の組み合わせでも
よい。X-ray wavelength 4.37 A Pd L, line and 44 Ck5
Although the wavelengths have been described above, other combinations of wavelengths may be used.
また、Ｘ線ｇ元用マスクの構造については、ボリイミド
＠８に枠部材９Ｙ固着させた［ｋ１１九ついて述べたが
、これ以外でもよい。また、Ｘｉ吸収層については２種
類のＸ線吸収率の異なる物質について述べたが、２種類
以上の物質でもよい。Regarding the structure of the X-ray g source mask, the frame member 9Y is fixed to the polyimide@8 [k119], but other structures may be used. Furthermore, although two types of materials with different X-ray absorption rates have been described for the Xi absorption layer, two or more types of materials may be used.
また、第２のＸ線吸収層である第２のＸ線吸収パターン
１２として、第１のＸ線吸収パターン１０にパターニン
グする例について述べたが、側部あるいは第２図に示す
よ５１Ｃ同一平面上に形成してもよい。In addition, although an example has been described in which the second X-ray absorption pattern 12, which is the second X-ray absorption layer, is patterned on the first X-ray absorption pattern 10, the side part or the same plane as 51C as shown in FIG. It may be formed on top.
さらに、上記実施例では、波長によりＸ線吸収率の異な
る物質によりＸ線吸収パターンを形成した例について述
べたが、同一波長でＸ線吸収率の異なる物質でＸ線吸収
パターンを構成してもよ（。Furthermore, in the above embodiment, an example was described in which an X-ray absorption pattern was formed using a material with different X-ray absorption rates depending on the wavelength. Yo(.
この場合にはＸ線照射の強度変化により異徨物質による
異種パターンが形成できる。In this case, different patterns can be formed by foreign substances due to changes in the intensity of X-ray irradiation.
この発明は以上説明したとおり、Ｘ線透過層上に複数の
各波長によりＸ線吸収率の異なる物質で複数のＸ恵吸収
パターンｗｒｒｆＪ一平面上または複数層状に形ｂ５．
ＬＹＸＭｇ充用マスクを形成したので。As explained above, this invention has a plurality of X-ray absorption patterns wrrfJ formed on one plane or in multiple layers using a plurality of materials having different X-ray absorptivity depending on each wavelength on an X-ray transmission layer.
Because I formed a mask filled with LYXMg.
このＸ線露光用マスクを用いてウェハにマスクパターン
の転写を行えば、１枚のＸ線露光用マスクにより２工程
分のＸＷ４露光用マスクが代用でき、作成方法も容易と
なり工期も短くなると同時に、コストダウンにもつなが
る。その上、Ｘ線露光用マスクの作成を同時Ｉｃｕ複数
工程分について作成可能なため、マスク精度の著しい向
上が期待でき、また、ウェハ転写は同一マスクを使用し
転写するため、ウェハ転写の７ライメントが不要で、ア
ライメント精度の著しい向上が期待できる。また。By using this X-ray exposure mask to transfer a mask pattern onto a wafer, one X-ray exposure mask can replace the XW4 exposure mask for two processes, making it easier to create and shortening the construction period. , which also leads to cost reduction. Furthermore, since it is possible to create X-ray exposure masks for multiple ICU processes at the same time, a significant improvement in mask accuracy can be expected.In addition, since the same mask is used for wafer transfer, seven alignments of wafer transfer can be achieved. is not required, and a significant improvement in alignment accuracy can be expected. Also.
これまでのＸ線ｇ党によるサグミクロンパターン形成の
精度低下は、Ｘ線露光用マスクとウェハ転写時のアライ
メント精度によるものであったが。The decrease in accuracy of sag micron pattern formation using X-ray beams so far has been due to the alignment accuracy between the X-ray exposure mask and the wafer transfer.
この発明によりこれらの大きな問題点は一挙に解決され
サグミクロンパターン形成が容易となつ、精度の向上が
可能となる効果が得られる。The present invention solves these major problems all at once, making it easier to form a sag-micron pattern, and making it possible to improve accuracy.
第１図（息）〜（ｅ）はこの発明の一実施例を示すＸ線
露光用マスクの製造工程ｌ説明するための断面図、第２
図はこの発明の他の実施例χ示すＸ線露光用マスクの断
面図、第３図Ｃｍ）〜（ｄ）は従来のＸ線ｊ！元用マス
クの製造工８を説明するための断面図である。
図において、１はシリコン基板、２はエピタキシャル層
、５は金層、８はポリイミド膜、９は枠部材、１０は第
１のＸＰｓ吸収パターン、１１はノジストパターン、１
２は第２のＸ脚吸収パターンである。
なお、各因中同−符号は同一または相轟部分を示す。
代理人 大岩 増雄 （外２名）
第１図
（ａ）
８：ポリイしく贋
（ｂ）
９：砕郁廿
第１図
（Ｃ）
１２：萬２の入−σλνぐターン
第２図
第３図
（ａ）
第３図
忙）
手続補正書（自発）
１、事件の表示 特願昭５Ｏ−２Ｂ７８４１］号２
、発明の名称 Ｘ ｋＱ ７８光用マスク３、補正
をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目２番３号名
称 （６０１）三菱電機株式会社５、補正の対象
明細書の特許請求の範囲の欄および発明の詳細な説明の
櫃
６、補正の内容
（１）明細書の特許請求の範囲を別紙のように補正する
。
（２）明細書第４頁２行の「複数の各波長における」を
削除する。
（３）同じく第７頁１８行の「複数の各波長により」を
削除する。
（４）同じく第８頁３行の「２工程分」を、「複数工程
分」と補正する。
以上
２、特許請求の範囲
Ｘ線透過層上に の −に゛けるＸ線吸収率の異な
る物質で複数のＸ線吸収パターンを同一工面上または複
数層状に形成したことを特徴とするＸ線露光用マスク。1(b) to 1(e) are cross-sectional views for explaining the manufacturing process l of an X-ray exposure mask showing one embodiment of the present invention;
The figure is a sectional view of an X-ray exposure mask showing another embodiment χ of the present invention, and FIGS. FIG. 2 is a cross-sectional view for explaining a manufacturing process 8 of the original mask. In the figure, 1 is a silicon substrate, 2 is an epitaxial layer, 5 is a gold layer, 8 is a polyimide film, 9 is a frame member, 10 is a first XPs absorption pattern, 11 is a nodist pattern, 1
2 is the second X-leg absorption pattern. Note that the same symbols in each factor indicate the same or similar parts. Agent: Masuo Oiwa (2 others) Figure 1 (a) 8: Polii Shikaku Fake (b) 9: Ikuji Figure 1 (C) 12: Man 2 entry - σλν turn 2 Figure 3 (a) Figure 3) Procedural amendment (spontaneous) 1. Indication of case Patent application No. 5O-2B7841] No. 2
, Title of the invention Claims column of the specification and Detailed Description of the Invention Box 6, Contents of amendment (1) The claims of the specification are amended as shown in the attached sheet. (2) Delete "at each of a plurality of wavelengths" in line 2 of page 4 of the specification. (3) Also delete "by each of a plurality of wavelengths" on page 7, line 18. (4) Similarly, "2 steps" on page 8, line 3, is corrected to "multiple steps." 2. Claims X-ray exposure characterized in that a plurality of X-ray absorption patterns are formed on the same surface or in a plurality of layers using materials having different X-ray absorption rates in - on the X-ray transmission layer. mask.
Claims (1)
る物質で複数のＸ線吸収パターンを同一平面上または複
数層状に形成したことを特徴とするＸ線露光用マスク。1. An X-ray exposure mask characterized in that a plurality of X-ray absorption patterns are formed on the same plane or in a plurality of layers using materials having different X-ray absorption rates at a plurality of wavelengths on an X-ray transmission layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267949A JPS61143757A (en) | 1984-12-17 | 1984-12-17 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267949A JPS61143757A (en) | 1984-12-17 | 1984-12-17 | X-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61143757A true JPS61143757A (en) | 1986-07-01 |
Family
ID=17451834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59267949A Pending JPS61143757A (en) | 1984-12-17 | 1984-12-17 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61143757A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4895779A (en) * | 1986-09-20 | 1990-01-23 | Mitsubishi Denki Kabushiki Kaisha | Method of forming a T shaped control electrode through an X-ray mask |
| JPH09306807A (en) * | 1996-05-14 | 1997-11-28 | Canon Inc | Manufacture of x-ray exposing mask structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789221A (en) * | 1980-11-25 | 1982-06-03 | Seiko Epson Corp | Multiple mask |
-
1984
- 1984-12-17 JP JP59267949A patent/JPS61143757A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789221A (en) * | 1980-11-25 | 1982-06-03 | Seiko Epson Corp | Multiple mask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4895779A (en) * | 1986-09-20 | 1990-01-23 | Mitsubishi Denki Kabushiki Kaisha | Method of forming a T shaped control electrode through an X-ray mask |
| JPH09306807A (en) * | 1996-05-14 | 1997-11-28 | Canon Inc | Manufacture of x-ray exposing mask structure |
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