JPH0312452B2 - - Google Patents
Info
- Publication number
- JPH0312452B2 JPH0312452B2 JP19786781A JP19786781A JPH0312452B2 JP H0312452 B2 JPH0312452 B2 JP H0312452B2 JP 19786781 A JP19786781 A JP 19786781A JP 19786781 A JP19786781 A JP 19786781A JP H0312452 B2 JPH0312452 B2 JP H0312452B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- layer
- membrane film
- ray absorption
- absorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は半導体用ホトマスクに関する。特に、
X線ホトリソグラフイにおけるX線露光ホトマス
クにおて有効である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask for semiconductors. especially,
It is effective in X-ray exposure photomasks in X-ray photolithography.
従来X線露光ホトマスクはSiN、SiO2、SiCな
どのX線露光マスク基板上にX線吸収層をAuで
形成する場合、電子ビーム露光で形成したレジス
トパターンを他の厚膜パターンに再現しAu選択
メツキ法によりX線吸収層を形成して構成される
のが通例であつた。しかるにレジストパターンを
他の厚膜にパターンを再現する場合は、エツチン
グやリフトオフ工程によりホトマスクのパターニ
ング精度が悪くなるという欠点があり、サブミク
ロン半導体装置製造に要求される精密性を十分満
足するものではなかつた。 Conventional X-ray exposure photomasks are used to reproduce the resist pattern formed by electron beam exposure into another thick film pattern when forming an X-ray absorbing layer with Au on an X-ray exposure mask substrate such as SiN, SiO 2 or SiC. It was customary to form an X-ray absorbing layer by selective plating. However, when reproducing resist patterns on other thick films, there is a drawback that the patterning accuracy of the photomask deteriorates due to etching and lift-off processes, and this method does not fully satisfy the precision required for manufacturing submicron semiconductor devices. Nakatsuta.
本発明ははるかに従来技術の欠点をなくすため
に、X線露光マスク基板にはX線吸収能を有する
不純物が注入されてなることを特徴としている。
本発明の目的とするところはサブミクロン半導体
製造に要求される起精密性を十分満足するために
製造工程にエツチングやリフトオフ工程を含まな
いX線露光ホトマスクを提供することにある。 In order to eliminate the drawbacks of the prior art, the present invention is characterized in that an impurity having an X-ray absorbing ability is implanted into the X-ray exposure mask substrate.
An object of the present invention is to provide an X-ray exposure photomask that does not include an etching or lift-off process in the manufacturing process in order to fully satisfy the precision required for manufacturing submicron semiconductors.
以下実施例を用いて詳細に説明する。 This will be explained in detail below using examples.
第1図〜第5図は従来のX線露光ホトマスクの
製造工程断面図である。第1図〜第5図について
説明する。 1 to 5 are cross-sectional views showing the manufacturing process of a conventional X-ray exposure photomask. 1 to 5 will be explained.
メンブレン膜4上にTi層3・Au層2・ポリイ
ミド層1を形成する(第1図)。レジスト5を電
子ビーム露光でレジストパターンを形成した後表
面をTi層6で覆う(第2図)。レジスト5とレジ
スト上のTi層を除去後プラズマイオンミリング
によりポリイミド層を選択エツチングする(第3
図)。次にAuエレクトロプレテイングによりX線
吸収Au層2を形成後プラズマエツチングにより
ポリイミドを除去する(第4図)。最後にAuと
Tiをエツチングして第5図の従来のX線露光ホ
トマスクができる。従来の製造工程では、Ti層
のリフトオフポリイミド層のエツチング、Au・
Ti層のエツチング工程がそれぞれパターニング
精度を落とし、電子ビーム露光で形成されたレジ
ストパターンがX線吸収層Auパターンに高精度
の再現性をもつて変換されていない。従来のX線
露光ホトマスクには以上のような欠点があつた。 A Ti layer 3, an Au layer 2, and a polyimide layer 1 are formed on the membrane film 4 (FIG. 1). After forming a resist pattern on the resist 5 by electron beam exposure, the surface is covered with a Ti layer 6 (FIG. 2). After removing the resist 5 and the Ti layer on the resist, the polyimide layer is selectively etched by plasma ion milling (third step).
figure). Next, after forming an X-ray absorbing Au layer 2 by Au electroplating, the polyimide is removed by plasma etching (FIG. 4). Finally with Au
By etching Ti, a conventional X-ray exposure photomask as shown in FIG. 5 is obtained. Conventional manufacturing processes involve etching the lift-off polyimide layer of the Ti layer, etching the Au/
The etching process of the Ti layer degrades patterning accuracy, and the resist pattern formed by electron beam exposure is not converted into the Au pattern of the X-ray absorption layer with high precision and reproducibility. Conventional X-ray exposure photomasks have the above-mentioned drawbacks.
また、第6図は本発明の実施例を理解し易くす
るための図である。第6図はメンブレン膜4に直
接、X線吸収能を有する不純物としてAuをもち
いてAuイオンビーム描画11を行ないX線吸収
層7を形成したX線露光ホトマスクである。この
ような第6図の方法によればX線露光ホトマスク
のパターニング精度は注入されるX線吸収能を有
する不純物Auの横広がりだけで決まり高精度の
パターニングが可能になる。 Further, FIG. 6 is a diagram for making it easier to understand the embodiment of the present invention. FIG. 6 shows an X-ray exposure photomask in which an X-ray absorbing layer 7 is formed by performing Au ion beam writing 11 directly on the membrane film 4 using Au as an impurity having X-ray absorbing ability. According to the method shown in FIG. 6, the patterning accuracy of the X-ray exposure photomask is determined only by the lateral spread of the implanted impurity Au having the ability to absorb X-rays, making it possible to perform highly accurate patterning.
しかし、第6図の方法では、イオンビームシス
テムの電流及び加速エネルギーが1回の照射でX
線を吸収するに充分な厚み及び濃度を保証できな
い場合がある。 However, in the method shown in Figure 6, the current and acceleration energy of the ion beam system are
It may not be possible to guarantee sufficient thickness and density to absorb the lines.
そこで、以上のような問題点を解決する本発明
の実施例として、X線露光ホトマスクの製造方法
を第7図〜第10図に示す。 Therefore, as an embodiment of the present invention that solves the above-mentioned problems, a method for manufacturing an X-ray exposure photomask is shown in FIGS. 7 to 10.
第7図はメンブレン膜4上にレジストまたは
SiO2などのメンブレン薄膜9を形成後直接Auイ
オンビーム描画を行ないX線吸収領域8を形成し
ている。次に再び9と同じメンブレン薄膜10を
形成する(第8図)。第7図で行なつたと同じパ
ターンをAuイオンビームにて再び描画する(第
9図)。そして、X線吸収領域8が必要なX線減
衰を行なうに充分な厚みを持つよう第8図、第9
図の工程をくり返すことにより、第10図の本発
明によるX線露光ホトマスクができる。第10図
は9の10のメンブレン薄膜にレジストを用いた
場合でありAuイオンビームの照射のない部分は
現像されている。本発明によればX線露光ホトマ
スクのパターニング精度は注入されるX線吸収能
を有する不純物Auの横拡がりとイオンビーム描
画の多層間の位置合わせだけで決まり、高精度の
パターニング精度が可能になる。 FIG. 7 shows resist or
After forming a membrane thin film 9 of SiO 2 or the like, direct Au ion beam writing is performed to form the X-ray absorption region 8 . Next, the same membrane thin film 10 as 9 is formed again (FIG. 8). The same pattern as in FIG. 7 is drawn again using an Au ion beam (FIG. 9). 8 and 9 so that the X-ray absorption region 8 has a sufficient thickness to perform the necessary X-ray attenuation.
By repeating the steps shown in the figure, the X-ray exposure photomask according to the present invention shown in FIG. 10 can be obtained. FIG. 10 shows the case where a resist is used for the membrane thin film 9 and 10, and the portions not irradiated with the Au ion beam have been developed. According to the present invention, the patterning accuracy of an X-ray exposure photomask is determined only by the lateral spread of the implanted impurity Au, which has X-ray absorption ability, and the alignment between multiple layers of ion beam lithography, making it possible to achieve high patterning accuracy. .
第1図〜第5図……従来のX線露光マスクの製
造工程。第6図……本発明の実施例を理解し易く
するためのX線露光マスクの断面図。第7図〜第
10図……本発明によるX線露光マスクの製造工
程断面図。
1……ポリイミド、2……Au、3……Ti、4
……メンブレン膜、5……PMMA、6……Ti、
7……イオン注入によるX線吸収層、8……イオ
ン注入による多層X線吸収領域、9,10……メ
ンブレン薄膜。
Fig. 1 to Fig. 5: Manufacturing process of conventional X-ray exposure mask. FIG. 6: A sectional view of an X-ray exposure mask to facilitate understanding of the embodiments of the present invention. FIGS. 7 to 10: sectional views showing the manufacturing process of the X-ray exposure mask according to the present invention. 1...Polyimide, 2...Au, 3...Ti, 4
...Membrane film, 5...PMMA, 6...Ti,
7... X-ray absorption layer by ion implantation, 8... Multilayer X-ray absorption region by ion implantation, 9, 10... Membrane thin film.
Claims (1)
を有する不純物を導入することにより形成された
第1X線吸収層、 前記第1X線吸収層を有する前記第1メンブレ
ン膜上に形成された第2メンブレン膜、 前記第2メンブレン膜に、X線吸収能を有する
不純物を前記第1X線吸収層と同じ形状となるよ
うに導入することにより形成され、かつ前記第
1X線吸収層と接するように前記第1X線吸収層上
に存在する第2X線吸収層、 を具備することを特徴とするX線露光ホトマス
ク。 2 基板となるメンブレン膜に、X線吸収能を有
する不純物を導入することにより形成された第
1X線吸収層、 前記メンブレン膜に設けられた前記第1X線吸
収層上に前記第1X線吸収層と同じ形状となるよ
うに存在し、かつX線吸収能を有する不純物が導
入された第2X線吸収層、 を具備することを特徴とするX線露光ホトマス
ク。[Scope of Claims] 1. A first X-ray absorbing layer formed by introducing an impurity having X-ray absorbing ability into a first membrane film serving as a substrate, the first membrane film having the first X-ray absorbing layer. a second membrane film formed on the second membrane film, the second membrane film being formed by introducing an impurity having an X-ray absorption ability into the second membrane film so as to have the same shape as the first X-ray absorption layer;
1. An X-ray exposure photomask comprising: a second X-ray absorption layer existing on the first X-ray absorption layer so as to be in contact with the first X-ray absorption layer. 2 A film formed by introducing an impurity with X-ray absorption ability into the membrane film that serves as the substrate.
1 X-ray absorption layer, a 2nd An X-ray exposure photomask comprising: a radiation absorption layer;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56197867A JPS5898923A (en) | 1981-12-09 | 1981-12-09 | Photomask for x-ray lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56197867A JPS5898923A (en) | 1981-12-09 | 1981-12-09 | Photomask for x-ray lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5898923A JPS5898923A (en) | 1983-06-13 |
JPH0312452B2 true JPH0312452B2 (en) | 1991-02-20 |
Family
ID=16381647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56197867A Granted JPS5898923A (en) | 1981-12-09 | 1981-12-09 | Photomask for x-ray lithography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5898923A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010023911A1 (en) | 2008-08-29 | 2010-03-04 | オイレス工業株式会社 | Multi-layer sliding member and rack guide in rack-and-pinion steering device for automobiles using same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1313792C (en) * | 1986-02-28 | 1993-02-23 | Junji Hirokane | Method of manufacturing photo-mask and photo-mask manufactured thereby |
JPH063791B2 (en) * | 1989-06-30 | 1994-01-12 | 工業技術院長 | X-ray mask and method of manufacturing the same |
-
1981
- 1981-12-09 JP JP56197867A patent/JPS5898923A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010023911A1 (en) | 2008-08-29 | 2010-03-04 | オイレス工業株式会社 | Multi-layer sliding member and rack guide in rack-and-pinion steering device for automobiles using same |
Also Published As
Publication number | Publication date |
---|---|
JPS5898923A (en) | 1983-06-13 |
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