JPH0685070B2 - Method of developing resist pattern - Google Patents
Method of developing resist patternInfo
- Publication number
- JPH0685070B2 JPH0685070B2 JP60020394A JP2039485A JPH0685070B2 JP H0685070 B2 JPH0685070 B2 JP H0685070B2 JP 60020394 A JP60020394 A JP 60020394A JP 2039485 A JP2039485 A JP 2039485A JP H0685070 B2 JPH0685070 B2 JP H0685070B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist film
- developing
- pattern
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、レジストパターンの現像方法に係り、特に
半導体ウエハあるいはマスク等の基板上に形成された被
エッチング部材上に設けられ、被エッチング部材をエッ
チングするためのレジスト膜を選択的に露光した後、現
像液を用いてレジスト膜を現像してレジストパターンを
形成するためのレジストパターンの現像方法に関するも
のである。The present invention relates to a method for developing a resist pattern, and more particularly to a member to be etched formed on a member to be etched formed on a substrate such as a semiconductor wafer or a mask. The present invention relates to a resist pattern developing method for forming a resist pattern by selectively exposing a resist film for etching a resist film and then developing the resist film with a developing solution.
半導体集積回路等の半導体装置を製造する際、写真製版
工程は必要不可欠のものである。最近、微細パターン形
成には電子ビーム露光装置あるいはＸ線露光装置により
高精度に作成されつつある。When manufacturing a semiconductor device such as a semiconductor integrated circuit, a photolithography process is indispensable. Recently, fine patterns are being formed with high precision by an electron beam exposure apparatus or an X-ray exposure apparatus.
また、全プロセスのドライ化が種々の分野で研究開発さ
れているが、現像工程はいまだ溶液による現像方法であ
り、全プロセスのドライ化は実用化されていない。Further, although researches and developments have been made in various fields to dry the whole process, the development step is still a developing method using a solution, and the dry process has not been put into practical use.
ここで、従来の微細パターン形成方法の一例を第２図
（ａ）〜（ｅ）を参照して説明する。まず、第２図
（ａ）に示すように、ガラス基板１上に金属薄膜（例え
ば金属クロム）２を被着させたプレートに電子ビーム用
のレジスト（例えばPMMA）膜３を約5000Åの厚さに被着
させ、170℃で20分間プリベークを行う。次に第２図
（ｂ）に示すように、電子ビームを９×10-5C/cm2のド
ーズ量にて所望のパターンに対応して所望のパターンに
対応して照射する。その後、第２図（ｃ）に示すよう
に、MIBK（メチルイソブチルケトン）８に対してIPA
（イソプロバノール）１の現像液を作成し、この現像液
にて現像を行いレジストパターン４を得る。その後、リ
ンス，乾燥して第２図（ｄ）に示すように、レジストパ
ターン４をマスクとして金属薄膜２をエッチングする。
次に第２図（ｅ）に示すように、レジストパターン４を
除去して金属薄膜パターン５を得る。Here, an example of a conventional fine pattern forming method will be described with reference to FIGS. First, as shown in FIG. 2 (a), a plate having a metal thin film (for example, metallic chromium) 2 deposited on a glass substrate 1 is provided with a resist (for example, PMMA) film 3 for electron beam with a thickness of about 5000Å. And pre-bake at 170 ° C for 20 minutes. Next, as shown in FIG. 2 (b), the electron beam is irradiated with a dose amount of 9 × 10 −5 C / cm 2 corresponding to the desired pattern. Then, as shown in FIG. 2 (c), IPA was applied to MIBK (methyl isobutyl ketone) 8.
A developing solution of (isopropanol) 1 is prepared, and development is performed with this developing solution to obtain a resist pattern 4. After that, the substrate is rinsed and dried, and as shown in FIG. 2D, the metal thin film 2 is etched by using the resist pattern 4 as a mask.
Next, as shown in FIG. 2 (e), the resist pattern 4 is removed to obtain a metal thin film pattern 5.
上記のような従来の微細パターン形成方法では、レジス
ト膜３と現像液との界面での濡れ性が悪く粗大欠陥の原
因となったり、現像液の浸透不足による現像ムラの原因
となっていた。In the conventional fine pattern forming method as described above, the wettability at the interface between the resist film 3 and the developing solution is poor, which causes coarse defects, and causes uneven development due to insufficient penetration of the developing solution.
特にポジ型のレジスト膜の現像液には、水分を多量に含
んだものが用いられているため、濡れ性の悪いことがパ
ターンのキレ性を悪くし、欠陥の発生を起していた。In particular, since a developer containing a large amount of water is used as the developer for the positive type resist film, poor wettability deteriorates the sharpness of the pattern and causes defects.
この発明は、上記のような従来のものの欠点を除去する
ためになされたもので選択的に露光されたレジスト膜
（例えば、電子ビーム用のポジ型レジストからなるレジ
スト膜）の露光部及び未露光部の表面と現像液との濡れ
性が良く、浸透作用が向上して、現像作用がスムーズに
進行し、低欠陥の微細パターンが得られるレジストパタ
ーンの現像方法を提供することを目的としている。The present invention is made in order to eliminate the above-mentioned drawbacks of the conventional ones, and an exposed portion and an unexposed portion of a selectively exposed resist film (for example, a resist film made of a positive resist for electron beam). It is an object of the present invention to provide a method for developing a resist pattern in which the wettability between the surface of the part and the developing solution is good, the penetrating action is improved, the developing action proceeds smoothly, and a fine pattern with low defects is obtained.
この発明に係るレジストパターンの現像方法は、基板上
に形成された被エッチング部材上に設けられ、被エッチ
ング部材をエッチングするためのレジスト膜の現像前
に、選択的に露光されたレジスト膜の露光部及び未露光
部の表面をO2プラズマ中において処理を行い、その後、
現像液を用いて表面処理されたレジスト膜を現像もので
ある。A resist pattern developing method according to the present invention is provided on a member to be etched formed on a substrate, and exposing a resist film selectively exposed before developing a resist film for etching the member to be etched. The surface of the exposed portion and the unexposed portion in O 2 plasma, then,
The resist film surface-treated with a developing solution is developed.
この発明においては、レジスト膜の露光部及び未露光部
の表面と現像液との界面の表面張力が低下するので、レ
ジスト膜の露光部及び未露光部の表面と現像液とのなじ
みがよくなり、濡れ性がよく、かつ浸透作用が向上する
ので、現像作用がスムーズに行われる。In this invention, the surface tension of the interface between the exposed and unexposed areas of the resist film and the developer is reduced, so that the familiarity between the exposed and unexposed areas of the resist film and the developer is improved. Since the wettability is good and the penetrating action is improved, the developing action is carried out smoothly.
第１図（ａ）〜（ｆ）はこの発明の一実施例を説明する
主要工程の断面図である。まず、第１図（ａ）に示すよ
うに、基板となる例えばガラス基板１上に、被エッチン
グ部材となる金属薄膜（金属クロム）２を約800Åの厚
さに被着したプレート上に、電子ビーム用のポジ型のレ
ジスト（RE−5000P:日立化成製）膜３を約5000Åの厚さ
に被着させ、約90℃で10分間プリベークを行った後、第
１図（ｂ）に示すように、電子ビームを５×10-6C/cm2
のドーズ量にて所望のパターンに対応して照射する。1 (a) to 1 (f) are sectional views of main steps for explaining an embodiment of the present invention. First, as shown in FIG. 1 (a), an electron is formed on a plate, for example, a glass substrate 1 serving as a substrate and a metal thin film (metal chrome) 2 serving as a member to be etched deposited to a thickness of about 800 Å. A positive resist (RE-5000P: made by Hitachi Chemical) film 3 for the beam is applied to a thickness of about 5000Å, and after prebaking at about 90 ° C for 10 minutes, as shown in Fig. 1 (b). The electron beam at 5 × 10 -6 C / cm 2
Irradiation corresponding to a desired pattern with a dose amount of.
電子ビーム照射後、ポストベークし、次にプラズマエッ
チング装置において第１図（ｃ）に示すように、45Paの
圧力，O2プラズマＰ中にて約300Wの出力にて約１分間レ
ジスト膜３の露光部及び未露光部の表面の処理を行う。
次に、O2プラズマ中にて表面処理されたレジスト膜を現
像液を用いて現像処理を行い、第１図（ｄ）に示すよう
に、レジストパターン４を形成する。以後、第１図
（ｅ）に示すように、Crからなる金属薄膜２をエッチン
グすることにより、第１図（ｆ）に示すように金属薄膜
パターン５が形成される。After the electron beam irradiation, post-baking is performed, and then, in a plasma etching apparatus, as shown in FIG. 1 (c), the resist film 3 is exposed for about 1 minute at a pressure of 45 Pa and an output of about 300 W in O 2 plasma P. The surfaces of the exposed and unexposed areas are processed.
Next, the resist film surface-treated in O 2 plasma is developed with a developing solution to form a resist pattern 4 as shown in FIG. 1 (d). Thereafter, as shown in FIG. 1 (e), the metal thin film 2 made of Cr is etched to form a metal thin film pattern 5 as shown in FIG. 1 (f).
このようにして得られた金属薄膜パターン５は、シャー
プなエッジで欠陥の少ない微細パターンが得られた。こ
の方法によれば、レジスト塗布時に生ずるレジスト膜３
の露光部及び未露光部の表面の表面エネルギーが低下
し、レジスト膜３の露光部及び未露光部の表面と現像液
との界面で表面張力が低下し、より現像作用がスムーズ
に進行する。この結果、現像時に生ずる濡れ性の問題，
現像ムラの問題が解決され、低欠陥の微細パターン形成
が可能となる。The metal thin film pattern 5 thus obtained was a fine pattern with sharp edges and few defects. According to this method, the resist film 3 produced during resist application
The surface energy of the exposed and unexposed areas of the resist film 3 decreases, and the surface tension decreases at the interface between the surface of the exposed and unexposed areas of the resist film 3 and the developer, so that the developing action proceeds more smoothly. As a result, the problem of wettability that occurs during development,
The problem of uneven development can be solved, and a fine pattern with low defects can be formed.
なお、上記実施例では、基板としてガラス基板１を用
い、被エッチング部材となる金属薄膜２としてクロム薄
膜の場合について述べたが、これ以外のものを使用して
も同様の効果を奏する。また、レジスト膜３としてRE−
5000Pの場合について述べたが、これ以外のレジスト膜
でも表面張力低下が可能なレジスト膜であればよく、同
様の効果を奏する。Although the glass substrate 1 is used as the substrate and the chromium thin film is used as the metal thin film 2 to be the member to be etched in the above-described embodiment, the same effect can be obtained by using other materials. Further, as the resist film 3, RE-
Although the case of 5000P has been described, other resist films may be used as long as the resist film can reduce the surface tension, and the same effect is obtained.
この発明は基板上に形成された被エッチング部材上に設
けられ、被エッチング部材をエッチングするためのレジ
スト膜の現像前に、選択的に露光されたレジスト膜の露
光部及び未露光部の表面をO2プラズマ中において処理を
行い、その後、現像液を用いて表面処理されたレジスト
膜を現像するようにしたので、レジスト膜の露光部及び
未露光部の表面と現像液の濡れ性が向上し、粗大欠陥，
微小欠陥の低減化，現像均一性の向上が実現可能とな
る。また、比較的簡便な方法であるため、コスト的にも
プロセス的にも負担が少なく、微細なレジストパターン
の作成が容易である利点がある。The present invention is provided on a member to be etched formed on a substrate, and before the development of a resist film for etching the member to be etched, the surface of the exposed and unexposed portions of the resist film selectively exposed is removed. Since the treatment was carried out in O 2 plasma and then the resist film surface-treated with a developing solution was developed, the wettability between the exposed and unexposed areas of the resist film and the developing solution was improved. , Gross defects,
It is possible to reduce minute defects and improve development uniformity. Further, since it is a relatively simple method, there is an advantage that the burden on the cost and the process is small and a fine resist pattern can be easily formed.
また現像液は従来のものでよいため、現像作用に変化が
ない利点がある。Further, since the developer may be a conventional one, there is an advantage that the developing action does not change.
第１図（ａ）〜（ｆ）はこの発明の一実施例を示す微細
なレジストパターン形成方法の工程断面図、第２図
（ａ）〜（ｅ）は従来の微細なレジストパターン形成方
法の工程断面図である。 図において、１は基板となるガラス基板、２は被エッチ
ング部材となる金属薄膜、３はレジスト膜、４はレジス
トパターン、５は金属薄膜パターン、ＰはO2プラズマで
ある。 なお、各図中の同一符号は同一または相当部分を示す。1 (a) to 1 (f) are process sectional views of a fine resist pattern forming method showing an embodiment of the present invention, and FIGS. 2 (a) to 2 (e) are conventional fine resist pattern forming methods. FIG. In the figure, 1 is a glass substrate which is a substrate, 2 is a metal thin film which is a member to be etched, 3 is a resist film, 4 is a resist pattern, 5 is a metal thin film pattern, and P is O 2 plasma. The same reference numerals in each drawing indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭51−82617（ＪＰ，Ａ) 特開 昭58−137836（ＪＰ，Ａ) 特開 昭59−142547（ＪＰ，Ａ) 特開 昭56−33827（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-51-82617 (JP, A) JP-A-58-137836 (JP, A) JP-A-59-142547 (JP, A) JP-A-56- 33827 (JP, A)
Claims (1)
設けられ、この被エッチング部材をエッチングするため
のレジスト膜を選択的に露光した後、O2プラズマ中にお
いて前記レジスト膜の露光部及び未露光部の表面の処理
を行い、その後現像液を用いて前記表面処理されたレジ
スト膜を現像することを特徴とするレジストパターンの
現像方法。1. A resist film, which is provided on a member to be etched formed on a substrate and is used for etching the member to be etched, is selectively exposed to light, and then an exposed portion of the resist film is exposed in O 2 plasma. A method for developing a resist pattern, which comprises treating the surface of an unexposed portion, and then developing the surface-treated resist film with a developing solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60020394A JPH0685070B2 (en) | 1985-02-04 | 1985-02-04 | Method of developing resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60020394A JPH0685070B2 (en) | 1985-02-04 | 1985-02-04 | Method of developing resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179435A JPS61179435A (en) | 1986-08-12 |
| JPH0685070B2 true JPH0685070B2 (en) | 1994-10-26 |
Family
ID=12025796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60020394A Expired - Lifetime JPH0685070B2 (en) | 1985-02-04 | 1985-02-04 | Method of developing resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0685070B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0450845A (en) * | 1990-06-14 | 1992-02-19 | Toyo Ink Mfg Co Ltd | Relief resin printing plate |
| JP3914468B2 (en) | 2002-06-21 | 2007-05-16 | Ａｚエレクトロニックマテリアルズ株式会社 | Development defect prevention process and composition used therefor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5182617A (en) * | 1975-01-17 | 1976-07-20 | Canon Kk | SAISENPATAANYOHOTORE JISUTOGENZOHOHO |
| JPS58137836A (en) * | 1982-02-10 | 1983-08-16 | Toshiba Corp | Processing agent for rubber resist |
| JPS59142547A (en) * | 1983-02-02 | 1984-08-15 | Nippon Telegr & Teleph Corp <Ntt> | Agent for raising image sharpness added into developing solution dependent on dissolution speed difference and developing composition containing it |
-
1985
- 1985-02-04 JP JP60020394A patent/JPH0685070B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61179435A (en) | 1986-08-12 |
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Legal Events
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|---|---|---|---|
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Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
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