JPS6472163A - Formation of thin film pattern - Google Patents
Formation of thin film patternInfo
- Publication number
- JPS6472163A JPS6472163A JP22886487A JP22886487A JPS6472163A JP S6472163 A JPS6472163 A JP S6472163A JP 22886487 A JP22886487 A JP 22886487A JP 22886487 A JP22886487 A JP 22886487A JP S6472163 A JPS6472163 A JP S6472163A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- photosensitive layer
- film pattern
- mask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To eliminate the need for mask alignment by forming a mask pattern having the shape confirming to the shape of a thin film pattern from a photosensitive layer and forming a fresh thin film pattern by using this mask pattern. CONSTITUTION:The photosensitive layer 3 consisting of a photosensitive material is formed on either the front or rear of a transparent substrate 1 on one face of which the thin film pattern 2 consisting of a light shielding material is previously formed. Light is then projected to the photosensitive layer 3 from the substrate face on the side opposite to the side on which this photosensitive layer 3 is formed to expose the shape of the thin film pattern 2 to the photosensitive layer 3. The photosensitive layer 3 is then developed to form the mask pattern having the shape conforming to the thin film pattern 2 from the photosensitive layer 3 and thereafter, the fresh thin film pattern 46 is formed by using this mask pattern. The need for the mask registration stage which is laborious and difficult is thereby entirely eliminated and the wastefulness in the production of semiconductor devices arising from the mask registration is eliminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22886487A JPS6472163A (en) | 1987-09-11 | 1987-09-11 | Formation of thin film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22886487A JPS6472163A (en) | 1987-09-11 | 1987-09-11 | Formation of thin film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472163A true JPS6472163A (en) | 1989-03-17 |
Family
ID=16883077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22886487A Pending JPS6472163A (en) | 1987-09-11 | 1987-09-11 | Formation of thin film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472163A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005024956A1 (en) * | 2003-09-04 | 2005-03-17 | Hitachi, Ltd. | Electrode substrate, thin-film transistor, display, and its production method |
US9583694B2 (en) | 2013-09-12 | 2017-02-28 | Ricoh Company, Ltd. | Pattern formation method, manufacturing method of peizoelectric film and manufacturing method of piezoelectric element |
-
1987
- 1987-09-11 JP JP22886487A patent/JPS6472163A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005024956A1 (en) * | 2003-09-04 | 2005-03-17 | Hitachi, Ltd. | Electrode substrate, thin-film transistor, display, and its production method |
GB2420017A (en) * | 2003-09-04 | 2006-05-10 | Hitachi Ltd | Electrode substrate, thin-film transistor, display, and its production method |
GB2420017B (en) * | 2003-09-04 | 2007-05-09 | Hitachi Ltd | Thin-film transistor substrate, and its production method |
US7521716B2 (en) | 2003-09-04 | 2009-04-21 | Hitachi, Ltd. | Electrode substrate, thin-film transistor, display and its production method |
US9583694B2 (en) | 2013-09-12 | 2017-02-28 | Ricoh Company, Ltd. | Pattern formation method, manufacturing method of peizoelectric film and manufacturing method of piezoelectric element |
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