JPS6472163A - Formation of thin film pattern - Google Patents

Formation of thin film pattern

Info

Publication number
JPS6472163A
JPS6472163A JP22886487A JP22886487A JPS6472163A JP S6472163 A JPS6472163 A JP S6472163A JP 22886487 A JP22886487 A JP 22886487A JP 22886487 A JP22886487 A JP 22886487A JP S6472163 A JPS6472163 A JP S6472163A
Authority
JP
Japan
Prior art keywords
thin film
photosensitive layer
film pattern
mask
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22886487A
Other languages
Japanese (ja)
Inventor
Koichi Aizawa
Keiji Kakinote
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP22886487A priority Critical patent/JPS6472163A/en
Publication of JPS6472163A publication Critical patent/JPS6472163A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need for mask alignment by forming a mask pattern having the shape confirming to the shape of a thin film pattern from a photosensitive layer and forming a fresh thin film pattern by using this mask pattern. CONSTITUTION:The photosensitive layer 3 consisting of a photosensitive material is formed on either the front or rear of a transparent substrate 1 on one face of which the thin film pattern 2 consisting of a light shielding material is previously formed. Light is then projected to the photosensitive layer 3 from the substrate face on the side opposite to the side on which this photosensitive layer 3 is formed to expose the shape of the thin film pattern 2 to the photosensitive layer 3. The photosensitive layer 3 is then developed to form the mask pattern having the shape conforming to the thin film pattern 2 from the photosensitive layer 3 and thereafter, the fresh thin film pattern 46 is formed by using this mask pattern. The need for the mask registration stage which is laborious and difficult is thereby entirely eliminated and the wastefulness in the production of semiconductor devices arising from the mask registration is eliminated.
JP22886487A 1987-09-11 1987-09-11 Formation of thin film pattern Pending JPS6472163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22886487A JPS6472163A (en) 1987-09-11 1987-09-11 Formation of thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22886487A JPS6472163A (en) 1987-09-11 1987-09-11 Formation of thin film pattern

Publications (1)

Publication Number Publication Date
JPS6472163A true JPS6472163A (en) 1989-03-17

Family

ID=16883077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22886487A Pending JPS6472163A (en) 1987-09-11 1987-09-11 Formation of thin film pattern

Country Status (1)

Country Link
JP (1) JPS6472163A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024956A1 (en) * 2003-09-04 2005-03-17 Hitachi, Ltd. Electrode substrate, thin-film transistor, display, and its production method
US9583694B2 (en) 2013-09-12 2017-02-28 Ricoh Company, Ltd. Pattern formation method, manufacturing method of peizoelectric film and manufacturing method of piezoelectric element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024956A1 (en) * 2003-09-04 2005-03-17 Hitachi, Ltd. Electrode substrate, thin-film transistor, display, and its production method
GB2420017A (en) * 2003-09-04 2006-05-10 Hitachi Ltd Electrode substrate, thin-film transistor, display, and its production method
GB2420017B (en) * 2003-09-04 2007-05-09 Hitachi Ltd Thin-film transistor substrate, and its production method
US7521716B2 (en) 2003-09-04 2009-04-21 Hitachi, Ltd. Electrode substrate, thin-film transistor, display and its production method
US9583694B2 (en) 2013-09-12 2017-02-28 Ricoh Company, Ltd. Pattern formation method, manufacturing method of peizoelectric film and manufacturing method of piezoelectric element

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