JPS55135837A - Manufacture of photomask - Google Patents
Manufacture of photomaskInfo
- Publication number
- JPS55135837A JPS55135837A JP4449279A JP4449279A JPS55135837A JP S55135837 A JPS55135837 A JP S55135837A JP 4449279 A JP4449279 A JP 4449279A JP 4449279 A JP4449279 A JP 4449279A JP S55135837 A JPS55135837 A JP S55135837A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- chip
- reticle
- master
- name
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To prevent appearance of an inferior master mask by forming a master mask using a reticle with a chip name pattern within its scribed line and by referring the mask name pattern of the master mask to the chip name pattern of each chip. CONSTITUTION:Using primary reticle 7 having chip region 2 except wiring pattern regions 1, chip name pattern 4 and dummy region 5 within scribed line 3, and a light shielding layer in peripheral region 6, secondary reticle 8 whose pattern is the laternal inverse of the pattern of reticle 7 is formed. A negative resist is coated onto a blank sheet for a master mask with visible master name pattern 9 corresponding to a chip pattern to be used, and the chip pattern is exposed on the sheet by a step- and-repeat method using reticle 8. The exposed sheet is developed and etched to form master 10. Each pattern 4 and pattern 9 are then confirmed by reference.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4449279A JPS55135837A (en) | 1979-04-12 | 1979-04-12 | Manufacture of photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4449279A JPS55135837A (en) | 1979-04-12 | 1979-04-12 | Manufacture of photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55135837A true JPS55135837A (en) | 1980-10-23 |
JPS6223862B2 JPS6223862B2 (en) | 1987-05-26 |
Family
ID=12693043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4449279A Granted JPS55135837A (en) | 1979-04-12 | 1979-04-12 | Manufacture of photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55135837A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277744A (en) * | 1988-09-13 | 1990-03-16 | Fujitsu Ltd | Production of photomask |
US7163870B2 (en) | 1997-03-31 | 2007-01-16 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7541647B2 (en) | 1997-08-21 | 2009-06-02 | Renesas Technology Corp. | Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02133949A (en) * | 1988-11-14 | 1990-05-23 | Hitachi Cable Ltd | Spot plating of lead frame |
JPH0734930Y2 (en) * | 1990-06-26 | 1995-08-09 | 富士プラント工業株式会社 | Masking material for partial plating for lead frames that requires plating on the island |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150259U (en) * | 1974-05-30 | 1975-12-13 | ||
JPS5311958U (en) * | 1976-07-13 | 1978-01-31 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5311958B2 (en) * | 1974-02-08 | 1978-04-25 |
-
1979
- 1979-04-12 JP JP4449279A patent/JPS55135837A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50150259U (en) * | 1974-05-30 | 1975-12-13 | ||
JPS5311958U (en) * | 1976-07-13 | 1978-01-31 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277744A (en) * | 1988-09-13 | 1990-03-16 | Fujitsu Ltd | Production of photomask |
US7474003B2 (en) | 1997-03-31 | 2009-01-06 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7187039B2 (en) | 1997-03-31 | 2007-03-06 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7199432B2 (en) | 1997-03-31 | 2007-04-03 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7250682B2 (en) | 1997-03-31 | 2007-07-31 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7274074B2 (en) | 1997-03-31 | 2007-09-25 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7163870B2 (en) | 1997-03-31 | 2007-01-16 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US7554202B2 (en) | 1997-03-31 | 2009-06-30 | Renesas Technology Corp | Semiconductor integrated circuit device |
US7626267B2 (en) | 1997-03-31 | 2009-12-01 | Renesas Technology Corporation | Semiconductor integrated circuit device including wiring lines and interconnections |
US7678684B2 (en) | 1997-03-31 | 2010-03-16 | Renesas Technology Corp. | Semiconductor integrated circuit device |
US8022550B2 (en) | 1997-03-31 | 2011-09-20 | Renesas Electronics Corporation | Semiconductor integrated circuit device |
US8420527B2 (en) | 1997-03-31 | 2013-04-16 | Renesas Electronics Corporation | Semiconductor integrated circuit device |
US7541647B2 (en) | 1997-08-21 | 2009-06-02 | Renesas Technology Corp. | Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS6223862B2 (en) | 1987-05-26 |
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