JPS6223862B2 - - Google Patents

Info

Publication number
JPS6223862B2
JPS6223862B2 JP4449279A JP4449279A JPS6223862B2 JP S6223862 B2 JPS6223862 B2 JP S6223862B2 JP 4449279 A JP4449279 A JP 4449279A JP 4449279 A JP4449279 A JP 4449279A JP S6223862 B2 JPS6223862 B2 JP S6223862B2
Authority
JP
Japan
Prior art keywords
chip
pattern
mask
name
scribe line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4449279A
Other languages
Japanese (ja)
Other versions
JPS55135837A (en
Inventor
Takao Shida
Takashi Ariga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4449279A priority Critical patent/JPS55135837A/en
Publication of JPS55135837A publication Critical patent/JPS55135837A/en
Publication of JPS6223862B2 publication Critical patent/JPS6223862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Description

【発明の詳細な説明】 本発明はマスターマスク製造方法の改良に関
す。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a master mask manufacturing method.

大型集積回路等素子集積度の高い半導体チツプ
用のレチクルに於いては、チツプ内に素子パター
ンや配線パターンが高密度に配置されるために、
チツプのパターン形成領域内にチツプ名パターン
を挿入することが困難である。
In reticles for semiconductor chips with high element integration such as large integrated circuits, element patterns and wiring patterns are arranged in a high density within the chip.
It is difficult to insert the chip name pattern within the pattern forming area of the chip.

そのために従来の大型集積回路等のマスターマ
スクは、チツプ名パターンが設けられていないレ
チクルを用いてマスク基板にチツプパターンを形
成させ、その際に別露光によりチツプ名に対応す
るマスク名パターンを形成する方法により製造し
ていた。
For this reason, conventional master masks for large integrated circuits, etc., use a reticle that does not have a chip name pattern to form a chip pattern on the mask substrate, and at that time, a separate exposure is performed to form a mask name pattern corresponding to the chip name. It was manufactured using a method.

然しこのような従来の方法は、マスクパターン
の一部に変更があつた場合や、マスタースライス
方式の場合のように同じマスク層(使用目的によ
るマスク分類、例えば配線用マスク、コンタクト
窓開き用マスク等)の中に多種類の異なつたマス
クパターンがある際には、形成されたチツプパタ
ーンと異なるマスク名パターンを形成したマスク
が製造される間違いが起きやすく、又上記の様な
同じマスク層のチツプパターンは非常に類似して
いる傾向があるので間違いが発見されにくいた
め、チツプパターンの種類とマスク名のくい違つ
たマスターマスクが出荷され、該マスターマスク
が間違つたマスク名を基準にして使用されて、集
積回路等の半導体装置の製造に大きな損害を発生
させるという問題があつた。
However, in this conventional method, if there is a change in a part of the mask pattern, or if the same mask layer (as in the master slicing method) etc.), when there are many different types of mask patterns, it is easy to produce a mask with a mask name pattern different from the chip pattern formed, and it is easy to make a mistake in manufacturing a mask with a different mask name pattern than the formed chip pattern. Since chip patterns tend to be very similar, it is difficult to detect mistakes. Therefore, master masks with different chip pattern types and mask names are shipped, and the master masks are based on the incorrect mask name. There has been a problem in that when used, it causes great damage in the manufacture of semiconductor devices such as integrated circuits.

本発明は上記問題点に鑑み、チツプパターンの
種類と異なるマスク名がつけられたマスターマス
クが出荷されることを防止し得るごときマスター
マスクの製造方法を提供する。
In view of the above problems, the present invention provides a method for manufacturing a master mask that can prevent a master mask having a mask name different from the type of chip pattern from being shipped.

即ち本発明はマスターマスクの製造に於いて、
レチクル内の矩形チツプパターンのチツプ領域を
囲むスクライブラインの一辺にチツプ名パターン
を、該一辺と対向する辺にダミー領域パターンを
設け、該レチクルを用いてマスク基板上にチツプ
パターンを繰り返し露光して隣合うチツプパター
ンのスクライブラインの領域が重なる複数個のチ
ツプパターンを形成する工程と、該チツプパター
ンの形成でスクライプラインに形成されたチツプ
名パターンと該マスク基板に別途形成されたマス
ク名パターンとを照合する工程を有することを特
徴とする。
That is, the present invention, in manufacturing a master mask,
A chip name pattern is provided on one side of the scribe line surrounding the chip area of the rectangular chip pattern in the reticle, and a dummy area pattern is provided on the side opposite to the scribe line, and the chip pattern is repeatedly exposed on the mask substrate using the reticle. A process of forming a plurality of chip patterns in which the scribe line regions of adjacent chip patterns overlap, and a process of forming a chip name pattern formed on the scribe line in the formation of the chip patterns and a mask name pattern separately formed on the mask substrate. It is characterized by having a step of collating.

以下本発明を配線パターン形成用マスターマス
ク製造に於ける図示一実施例により詳細に説明す
る。
The present invention will be explained in detail below with reference to an illustrated example of manufacturing a master mask for forming a wiring pattern.

第1図は本発明の上記一実施例の第1次レチク
ル表面図で、第2図は同じく第2次レチクル表面
図、第3図は同じくマスターマスクの部分表面図
である。
FIG. 1 is a first reticle surface diagram of the above embodiment of the present invention, FIG. 2 is a second reticle surface diagram, and FIG. 3 is a partial surface diagram of a master mask.

即ち本発明の方法は、先ずパターンジエネレー
タを用いて磁気テープからの情報によりレチクル
用乾板に露光を行い、現像して第1図に示すよう
に配線パターン領域1を除いたチツプ領域2と、
スクライブライン3の一辺内のチツプ名パターン
4と、該チツプ名パターン4を有するスクライブ
ラインとチツプ領域2をはさんで対向するスクラ
イブラインの前記チツプ名パターン4に対応する
場所のダミー領域5と、スクライブライン3の外
周領域6とに遮光層を有する第1次レチクル7を
形成させる。
That is, in the method of the present invention, a reticle dry plate is first exposed to light using information from a magnetic tape using a pattern generator, and developed to form a chip area 2 excluding a wiring pattern area 1 as shown in FIG.
A chip name pattern 4 within one side of the scribe line 3, and a dummy area 5 at a location corresponding to the chip name pattern 4 on the scribe line that faces the scribe line having the chip name pattern 4 across the chip area 2; A primary reticle 7 having a light shielding layer is formed in the outer peripheral region 6 of the scribe line 3.

次にコンタクトプリンターを用いて、上記第1
次レチクル7のパターンをポジレジストを塗布し
たブランク板に転写し、現像、エツチングを行つ
て第2図に示すように第1次レチクルと左右逆の
パターンを有し、第1次レチクルと同様に配線パ
ターン領域1を除いたチツプ領域2及びスクライ
ブライン3内のチツプ名パターン4とダミー領域
5及びスクライブライン3の外周領域6とに遮光
層を有する、使用寿命の長いハードマスクによる
第2次レチクル8を形成させる。
Next, using a contact printer,
The pattern of the next reticle 7 is transferred to a blank plate coated with positive resist, developed and etched to form a pattern that is left and right opposite to that of the first reticle, as shown in FIG. A secondary reticle made of a hard mask with a long service life, which has a light-shielding layer in the chip area 2 excluding the wiring pattern area 1, the chip name pattern 4 in the scribe line 3, the dummy area 5, and the outer peripheral area 6 of the scribe line 3. Form 8.

次にネガレジストを塗布し、その周縁部に形成
せしめようとするチツプパターンに対応する目視
可能な大きさを有するマスク記号パターンを予め
露光せしめたマスターマスク用ブランク板上に、
前記第2次レチクルを用いてステツプ・アンド・
レピート法によりチツプパターンの露光を行い、
現像、エツチングを行つて、第3図に示すように
第2次レチクルと左右逆のパターンで、遮光層よ
りなるスクライブライン3′によつて仕切られた
透光性のチップ領域2′内に遮光層による配線パ
ターン1′を有し、前記遮光層からなるスクライ
ブライン3′の一辺に透光性のチツプ名パターン
4′を有してなるチツプパターンが複数個整列形
成され、マスク周縁部に遮光性の目視可能な大き
さを有するマスク名パターン9を有するハードマ
スクよりなるマスターマスク10を形成させる。
Next, a negative resist is applied and a mask symbol pattern having a visible size corresponding to the chip pattern to be formed on the peripheral edge thereof is exposed in advance on a master mask blank plate.
Step and... using the secondary reticle.
The chip pattern is exposed using the repeat method.
After developing and etching, a light-shielding pattern is formed in the light-transmitting chip area 2' partitioned by the scribe line 3' made of the light-shielding layer in a pattern opposite to that of the secondary reticle, as shown in Fig. 3. A plurality of chip patterns each having a layered wiring pattern 1' and a light-transmitting chip name pattern 4' are formed in alignment on one side of the scribe line 3' made of the light-shielding layer, and a light-shielding layer is formed at the periphery of the mask. A master mask 10 made of a hard mask having a mask name pattern 9 having a visually visible size is formed.

然る後該マスターマスク10のチツプ名パター
ン4′とマスク名パターン9とを照合し、一致し
ていることを確認してマスターマスクの製造は完
了する。
Thereafter, the chip name pattern 4' of the master mask 10 is compared with the mask name pattern 9, and it is confirmed that they match, and the manufacture of the master mask is completed.

然して本発明による方法はチツプ名パターンを
上記のようにスクライブライン内に形成させるの
で、チツプに形成させる素子の集積度を低下させ
ることはない。
However, since the method according to the present invention forms the chip name pattern within the scribe line as described above, the degree of integration of elements formed on the chip is not reduced.

以上説明したように本発明の方法で形成させた
マスターマスクは、スクライブライン内に明示さ
れたチツプ名とマスターマスク周縁部に形成させ
たマスク名とが照合されており、形成されている
チツプパターンとマスク名は正確に一致している
ので、マスク名の表示違いによつて、集積回路等
の半導体装置の製造に損害を与えることを未然に
防止する効果を有する。
As explained above, in the master mask formed by the method of the present invention, the chip name specified in the scribe line is compared with the mask name formed on the periphery of the master mask, and the formed chip pattern is Since the mask name and mask name exactly match, it has the effect of preventing damage to the manufacturing of semiconductor devices such as integrated circuits due to incorrect display of the mask name.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は配線パターン用マスターマスク製造に
際しての本発明の一実施例における第1次レチク
ル表面図で、第2図は同じく第2次レチクル表面
図、第3図は同じくマスターマスクの部分表面図
である。 図に於いて、1,1′は配線パターン領域、
2,2′はチツプ領域、3,3′はスクライブライ
ン、4,4′はチツプ名パターン、5はダミー領
域、6は外周領域、7は第1次レチクル、8は第
2次レチクル、9はチツプ名パターン、10はマ
スターマスク。
FIG. 1 is a first reticle surface diagram in one embodiment of the present invention when manufacturing a master mask for wiring patterns, FIG. 2 is a second reticle surface diagram, and FIG. 3 is a partial surface diagram of the master mask. It is. In the figure, 1 and 1' are wiring pattern areas;
2 and 2' are chip areas, 3 and 3' are scribe lines, 4 and 4' are chip name patterns, 5 is a dummy area, 6 is an outer peripheral area, 7 is a primary reticle, 8 is a secondary reticle, 9 is the chip name pattern, and 10 is the master mask.

Claims (1)

【特許請求の範囲】 1 マスターマスクの製造に於いて、 レチクル内の矩形チツプパターンのチツプ領域
を囲むスクライブラインの一辺にチツプ名パター
ンを、該一辺と対向する辺にダミー領域パターン
を設け、 レチクルを用いてマスク基板上にチツプパター
ンを繰り返し露光して隣合うチツプパターンのス
クライブラインの領域が重なる複数個のチツプパ
ターンを形成する工程と、 チツプパターンの形成でスクライブラインに形
成されたチツプ名パターンと該マスク基板に別途
形成されたマスク名パターンとを照合する工程を
有することを特徴とするフオトマスク製造方法。
[Claims] 1. In manufacturing a master mask, a chip name pattern is provided on one side of a scribe line surrounding a chip area of a rectangular chip pattern in a reticle, a dummy area pattern is provided on the opposite side to the scribe line, and a reticle is manufactured. A process of repeatedly exposing a chip pattern on a mask substrate using a method to form a plurality of chip patterns in which the scribe line areas of adjacent chip patterns overlap, and a process of forming a chip name pattern on the scribe line by forming the chip pattern. A photomask manufacturing method comprising the step of comparing the mask name pattern with a mask name pattern separately formed on the mask substrate.
JP4449279A 1979-04-12 1979-04-12 Manufacture of photomask Granted JPS55135837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4449279A JPS55135837A (en) 1979-04-12 1979-04-12 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4449279A JPS55135837A (en) 1979-04-12 1979-04-12 Manufacture of photomask

Publications (2)

Publication Number Publication Date
JPS55135837A JPS55135837A (en) 1980-10-23
JPS6223862B2 true JPS6223862B2 (en) 1987-05-26

Family

ID=12693043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4449279A Granted JPS55135837A (en) 1979-04-12 1979-04-12 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS55135837A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02133949A (en) * 1988-11-14 1990-05-23 Hitachi Cable Ltd Spot plating of lead frame
JPH0734930Y2 (en) * 1990-06-26 1995-08-09 富士プラント工業株式会社 Masking material for partial plating for lead frames that requires plating on the island

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277744A (en) * 1988-09-13 1990-03-16 Fujitsu Ltd Production of photomask
JP3638778B2 (en) 1997-03-31 2005-04-13 株式会社ルネサステクノロジ Semiconductor integrated circuit device and manufacturing method thereof
JP4014708B2 (en) 1997-08-21 2007-11-28 株式会社ルネサステクノロジ Method for designing semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5311958B2 (en) * 1974-02-08 1978-04-25

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50150259U (en) * 1974-05-30 1975-12-13
JPS5311958U (en) * 1976-07-13 1978-01-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5311958B2 (en) * 1974-02-08 1978-04-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02133949A (en) * 1988-11-14 1990-05-23 Hitachi Cable Ltd Spot plating of lead frame
JPH0734930Y2 (en) * 1990-06-26 1995-08-09 富士プラント工業株式会社 Masking material for partial plating for lead frames that requires plating on the island

Also Published As

Publication number Publication date
JPS55135837A (en) 1980-10-23

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