JPS5767930A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS5767930A JPS5767930A JP14486980A JP14486980A JPS5767930A JP S5767930 A JPS5767930 A JP S5767930A JP 14486980 A JP14486980 A JP 14486980A JP 14486980 A JP14486980 A JP 14486980A JP S5767930 A JPS5767930 A JP S5767930A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- film
- transcribed
- substrate
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To obtain a photomask with which a substrate to be transcribed can be separated easily after a contact exposure, by coating a separation promoting film having a low level of viscidity to the substrate to be transcribed on a proper region on the surface of the photomask. CONSTITUTION:The photoresist is applied on a blank plate containing a light shielding film formed on a glass substrate 21, and a pattern is transcribed to the photoresist to form a photoresist film containing a desired pattern. The light shielding film is etched by using the photoresist film as a mask to obtain a light shielding film 22 containing a desired pattern. After this, the photoresist is applied again on the film 22 to perform an exposure. In this case of exposure, the photoresist is removed in a range slightly smaller than a substrate to be transcribed. The ultravilet rays are cut off so that the photoresist has its inner circumference fringe at the area slightly smaller than the substrate to be transcribed and remains over the outer circumference of a photomask 2b. After the exposure, a separation promoting film 24a is formed with the residual photoresist film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14486980A JPS5767930A (en) | 1980-10-15 | 1980-10-15 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14486980A JPS5767930A (en) | 1980-10-15 | 1980-10-15 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5767930A true JPS5767930A (en) | 1982-04-24 |
Family
ID=15372275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14486980A Pending JPS5767930A (en) | 1980-10-15 | 1980-10-15 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5767930A (en) |
-
1980
- 1980-10-15 JP JP14486980A patent/JPS5767930A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55150225A (en) | Method of correcting white spot fault of photomask | |
JPS5630129A (en) | Manufacture of photomask | |
JPS5767930A (en) | Photomask | |
JPS5672445A (en) | Production of photomask | |
JPS576849A (en) | Photomask and its preparation | |
JPS57148706A (en) | Production of color filter | |
JPS5596952A (en) | Production of photomask | |
JPS5670553A (en) | Photomask for projection exposure | |
JPS55128832A (en) | Method of making minute pattern | |
JPS5689741A (en) | Dryplate for photomasking | |
JPS5339060A (en) | Lot number marking method to wafers | |
JPS53110379A (en) | Optical filter and its manufacture | |
JPS5744150A (en) | Photomask | |
JPS5742043A (en) | Photosensitive material | |
JPS5618420A (en) | Manufacture of semiconductor device | |
JPS57212445A (en) | Production of photomask | |
JPS5655950A (en) | Photographic etching method | |
JPS576848A (en) | Photomask and its preparation | |
JPS5612736A (en) | Formation of fine chromium pattern | |
JPS5734506A (en) | Production of color filter | |
JPS57112025A (en) | Formation of pattern | |
JPS56130750A (en) | Manufacture of mask | |
JPS53128277A (en) | Projection exposure method for negative resist | |
JPS5619623A (en) | Photomask | |
JPS5699342A (en) | Manufacture of photomask |