JPS6410239A - Method for forming positive type resist pattern - Google Patents

Method for forming positive type resist pattern

Info

Publication number
JPS6410239A
JPS6410239A JP16638987A JP16638987A JPS6410239A JP S6410239 A JPS6410239 A JP S6410239A JP 16638987 A JP16638987 A JP 16638987A JP 16638987 A JP16638987 A JP 16638987A JP S6410239 A JPS6410239 A JP S6410239A
Authority
JP
Japan
Prior art keywords
pattern
resist
worked
prescribed
resist solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16638987A
Other languages
Japanese (ja)
Inventor
Kazunari Miyoshi
Katsuyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16638987A priority Critical patent/JPS6410239A/en
Publication of JPS6410239A publication Critical patent/JPS6410239A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

PURPOSE:To reduce swelling and flow of a pattern at the time of developing it,and to form a fine pattern with high accuracy by dehydrating previously a resist material or a resist solution which dissolves the resist material in a solvent, thereby reducing water content of said resist solution which is applied to an article to be worked. CONSTITUTION:A prescribed resist pattern is formed by coating the article to be worked wit the resist solution, followed by prebaking it, and the obtd. prescribed pattern is irradiated by a high energy ray, followed by developing said pattern to form the prescribed resist pattern on the particle to be worked. In this case, the resist solution is prepd. by dehydrating the water content of a positive type resist material to <=0.4wt.%, and then, by dissolving said material in the solvent. Namely, the swelling and the flow of the pattern does not generate, and the pattern having the high resolution is formed by reducing the water content of the resist solution to a prescribed value, thereby forming the pattern on the article to be worked.
JP16638987A 1987-07-03 1987-07-03 Method for forming positive type resist pattern Pending JPS6410239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16638987A JPS6410239A (en) 1987-07-03 1987-07-03 Method for forming positive type resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16638987A JPS6410239A (en) 1987-07-03 1987-07-03 Method for forming positive type resist pattern

Publications (1)

Publication Number Publication Date
JPS6410239A true JPS6410239A (en) 1989-01-13

Family

ID=15830511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16638987A Pending JPS6410239A (en) 1987-07-03 1987-07-03 Method for forming positive type resist pattern

Country Status (1)

Country Link
JP (1) JPS6410239A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006243293A (en) * 2005-03-02 2006-09-14 Jsr Corp Radiation-sensitive resin composition
US8119321B2 (en) 2003-12-11 2012-02-21 Maruzen Petrochemical Co., Ltd. Resist polymer solution and process for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182442A (en) * 1983-04-01 1984-10-17 Nec Corp Photographic etching method
JPS59182439A (en) * 1983-04-01 1984-10-17 Nec Corp Energy radiation sensitive resin solution

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182442A (en) * 1983-04-01 1984-10-17 Nec Corp Photographic etching method
JPS59182439A (en) * 1983-04-01 1984-10-17 Nec Corp Energy radiation sensitive resin solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8119321B2 (en) 2003-12-11 2012-02-21 Maruzen Petrochemical Co., Ltd. Resist polymer solution and process for producing the same
JP2006243293A (en) * 2005-03-02 2006-09-14 Jsr Corp Radiation-sensitive resin composition

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