JPS5789477A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS5789477A JPS5789477A JP16431480A JP16431480A JPS5789477A JP S5789477 A JPS5789477 A JP S5789477A JP 16431480 A JP16431480 A JP 16431480A JP 16431480 A JP16431480 A JP 16431480A JP S5789477 A JPS5789477 A JP S5789477A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- pattern
- chlorine
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To completely remove chlorine remaining at an etched surface, by forming an etched pattern in the Al film of a transistor in a dry etching process using chlorine gas, and then irradiating laser beams to the etched part.
CONSTITUTION: A phosphorus silicide glass film 11 is accumulated on the whole surface of a field oxide film 12, a gate oxide film 13 and a gate electrode on a Si wafer 11. A photoresist film is applied to the glass film-formed Si wafer, and a contact hole-forming resist pattern is formed by an optical etching method. Thereafter, a contact hold 17 is formed by selective etching. An Al film 18 is accumulated on the etched surface, and then dry-etched with use of CCl4 gas to form an Al distribution pattern. The pattern is subjected to radiation of laser beams in vacuo, to assuredly remove chlorine remaining at the etched surface of the Al film. Consequently, the distribution composed of the Al film is not corroded or down due to absorption of water by chlorine.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16431480A JPS5789477A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16431480A JPS5789477A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789477A true JPS5789477A (en) | 1982-06-03 |
Family
ID=15790786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16431480A Pending JPS5789477A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789477A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0464234A (en) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | Forming method of wiring pattern |
-
1980
- 1980-11-21 JP JP16431480A patent/JPS5789477A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0464234A (en) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | Forming method of wiring pattern |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56160050A (en) | Semiconductor device and manufacture thereof | |
JPS5588352A (en) | Manufacture of semiconductor device | |
JPS5789477A (en) | Dry etching method | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS5789476A (en) | Dry etching method | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS57155539A (en) | Mask | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS5596681A (en) | Method of fabricating semiconductor device | |
JPS56114328A (en) | Manufacture of semiconductor device | |
JPS57124443A (en) | Forming method for electrode layer | |
JPS5711344A (en) | Dry developing method | |
JPS57173943A (en) | Manufacture of photo mask | |
JPS56115537A (en) | Forming method of infinitesimal pattern | |
JPS57180176A (en) | Manufacturing method for semiconductor device | |
JPS5587436A (en) | Method of producing semiconductor device | |
JPS5693319A (en) | Manufacture of semiconductor device | |
JPS57155731A (en) | Formation of pattern | |
JPS6420624A (en) | Manufacture of semiconductor device | |
JPS6479743A (en) | Pattern forming method by dry developing | |
JPS5357974A (en) | Electron beam exposure method | |
JPS5648150A (en) | Manufacture of semiconductor device | |
JPS57118631A (en) | Manufacture of semiconductor substrate | |
JPS54162460A (en) | Electrode forming method | |
JPS6457618A (en) | Pattern forming method |