JPS5789477A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5789477A
JPS5789477A JP16431480A JP16431480A JPS5789477A JP S5789477 A JPS5789477 A JP S5789477A JP 16431480 A JP16431480 A JP 16431480A JP 16431480 A JP16431480 A JP 16431480A JP S5789477 A JPS5789477 A JP S5789477A
Authority
JP
Japan
Prior art keywords
film
etched
pattern
chlorine
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16431480A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16431480A priority Critical patent/JPS5789477A/en
Publication of JPS5789477A publication Critical patent/JPS5789477A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To completely remove chlorine remaining at an etched surface, by forming an etched pattern in the Al film of a transistor in a dry etching process using chlorine gas, and then irradiating laser beams to the etched part.
CONSTITUTION: A phosphorus silicide glass film 11 is accumulated on the whole surface of a field oxide film 12, a gate oxide film 13 and a gate electrode on a Si wafer 11. A photoresist film is applied to the glass film-formed Si wafer, and a contact hole-forming resist pattern is formed by an optical etching method. Thereafter, a contact hold 17 is formed by selective etching. An Al film 18 is accumulated on the etched surface, and then dry-etched with use of CCl4 gas to form an Al distribution pattern. The pattern is subjected to radiation of laser beams in vacuo, to assuredly remove chlorine remaining at the etched surface of the Al film. Consequently, the distribution composed of the Al film is not corroded or down due to absorption of water by chlorine.
COPYRIGHT: (C)1982,JPO&Japio
JP16431480A 1980-11-21 1980-11-21 Dry etching method Pending JPS5789477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16431480A JPS5789477A (en) 1980-11-21 1980-11-21 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16431480A JPS5789477A (en) 1980-11-21 1980-11-21 Dry etching method

Publications (1)

Publication Number Publication Date
JPS5789477A true JPS5789477A (en) 1982-06-03

Family

ID=15790786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16431480A Pending JPS5789477A (en) 1980-11-21 1980-11-21 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5789477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0464234A (en) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp Forming method of wiring pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0464234A (en) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp Forming method of wiring pattern

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