JPS5787125A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5787125A JPS5787125A JP16355980A JP16355980A JPS5787125A JP S5787125 A JPS5787125 A JP S5787125A JP 16355980 A JP16355980 A JP 16355980A JP 16355980 A JP16355980 A JP 16355980A JP S5787125 A JPS5787125 A JP S5787125A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- opening
- making
- film
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 101000617725 Homo sapiens Pregnancy-specific beta-1-glycoprotein 2 Proteins 0.000 abstract 1
- 102100022019 Pregnancy-specific beta-1-glycoprotein 2 Human genes 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To make a fine opening for lead connection by injecting ion only in PSG after etching and by etching SiO2 when making the opening in a two-layer film of SiO2 and PSG on an Si substrate. CONSTITUTION:In making an N type MOSFET, if ion is injected after forming an opening only on PSG2 without using a resist mask, SiO2 changes into SiO25 by the action of PSF and a diffusion layer right under the opening becomes deep. When etched again, a film 5 is etched faster than the SiO2 film without making the diameter of the hole any larger.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16355980A JPS5787125A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16355980A JPS5787125A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5787125A true JPS5787125A (en) | 1982-05-31 |
Family
ID=15776195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16355980A Pending JPS5787125A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5787125A (en) |
-
1980
- 1980-11-20 JP JP16355980A patent/JPS5787125A/en active Pending
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