JPS6444927A - Resist pattern forming method - Google Patents

Resist pattern forming method

Info

Publication number
JPS6444927A
JPS6444927A JP62202372A JP20237287A JPS6444927A JP S6444927 A JPS6444927 A JP S6444927A JP 62202372 A JP62202372 A JP 62202372A JP 20237287 A JP20237287 A JP 20237287A JP S6444927 A JPS6444927 A JP S6444927A
Authority
JP
Japan
Prior art keywords
layer
resist pattern
phosphagen
photoresist
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62202372A
Other languages
Japanese (ja)
Inventor
Yoshio Yamashita
Toshio Ito
Naruyuki Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62202372A priority Critical patent/JPS6444927A/en
Publication of JPS6444927A publication Critical patent/JPS6444927A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To form a two layer resist pattern with high dye-etching property by removing the part of a phosphagen type polymer layer using the pattern of a photoresist formed on the phosphagen type polymer layer as a mask. CONSTITUTION:The lower layer of the two layer resist pattern is composed of the phosphagen type polymer layer 43. For example, the phosphagen type polymer has the durability in such extent that the etching grade of said polymer is larger than that of a positive type photoresist 45 used for the upper layer of said two layer resist pattern by more than one figure, in a reactive ion etching (RIE) using a fluorine gas. And, in the RIE using a chlorine gas, said polymer has the larger durability than that of a novolak type photoresist. Accordingly, for example, when said two layer resist pattern is treated with the RIE using the fluorine gas, after patterning the upper layer photoresist on said resist pattern, the part of the phosphagen polymer layer 43 which is the lower layer of said two layer resist pattern and exposes from the photoresist pattern 45a, is selectively removed. Thus, the two layer resist pattern with the high dry-etching property is obtd.
JP62202372A 1987-08-13 1987-08-13 Resist pattern forming method Pending JPS6444927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62202372A JPS6444927A (en) 1987-08-13 1987-08-13 Resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62202372A JPS6444927A (en) 1987-08-13 1987-08-13 Resist pattern forming method

Publications (1)

Publication Number Publication Date
JPS6444927A true JPS6444927A (en) 1989-02-17

Family

ID=16456408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62202372A Pending JPS6444927A (en) 1987-08-13 1987-08-13 Resist pattern forming method

Country Status (1)

Country Link
JP (1) JPS6444927A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210357A (en) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd Fine pattern forming material and method therefor
WO1993004406A1 (en) * 1991-08-13 1993-03-04 Toray Industries, Inc. Double-layer resist and method of and device for making said resist
US5948340A (en) * 1997-05-19 1999-09-07 Koyo Seiko Co., Ltd. Die and method for molding cage out of synthetic resin
JP2020529728A (en) * 2017-07-31 2020-10-08 サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク Improved mask to protect semiconductor materials for localized etching applications

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210357A (en) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd Fine pattern forming material and method therefor
WO1993004406A1 (en) * 1991-08-13 1993-03-04 Toray Industries, Inc. Double-layer resist and method of and device for making said resist
US5948340A (en) * 1997-05-19 1999-09-07 Koyo Seiko Co., Ltd. Die and method for molding cage out of synthetic resin
JP2020529728A (en) * 2017-07-31 2020-10-08 サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク Improved mask to protect semiconductor materials for localized etching applications

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