JPS6444927A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPS6444927A JPS6444927A JP62202372A JP20237287A JPS6444927A JP S6444927 A JPS6444927 A JP S6444927A JP 62202372 A JP62202372 A JP 62202372A JP 20237287 A JP20237287 A JP 20237287A JP S6444927 A JPS6444927 A JP S6444927A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist pattern
- phosphagen
- photoresist
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To form a two layer resist pattern with high dye-etching property by removing the part of a phosphagen type polymer layer using the pattern of a photoresist formed on the phosphagen type polymer layer as a mask. CONSTITUTION:The lower layer of the two layer resist pattern is composed of the phosphagen type polymer layer 43. For example, the phosphagen type polymer has the durability in such extent that the etching grade of said polymer is larger than that of a positive type photoresist 45 used for the upper layer of said two layer resist pattern by more than one figure, in a reactive ion etching (RIE) using a fluorine gas. And, in the RIE using a chlorine gas, said polymer has the larger durability than that of a novolak type photoresist. Accordingly, for example, when said two layer resist pattern is treated with the RIE using the fluorine gas, after patterning the upper layer photoresist on said resist pattern, the part of the phosphagen polymer layer 43 which is the lower layer of said two layer resist pattern and exposes from the photoresist pattern 45a, is selectively removed. Thus, the two layer resist pattern with the high dry-etching property is obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62202372A JPS6444927A (en) | 1987-08-13 | 1987-08-13 | Resist pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62202372A JPS6444927A (en) | 1987-08-13 | 1987-08-13 | Resist pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6444927A true JPS6444927A (en) | 1989-02-17 |
Family
ID=16456408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62202372A Pending JPS6444927A (en) | 1987-08-13 | 1987-08-13 | Resist pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6444927A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0210357A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Fine pattern forming material and method therefor |
WO1993004406A1 (en) * | 1991-08-13 | 1993-03-04 | Toray Industries, Inc. | Double-layer resist and method of and device for making said resist |
US5948340A (en) * | 1997-05-19 | 1999-09-07 | Koyo Seiko Co., Ltd. | Die and method for molding cage out of synthetic resin |
JP2020529728A (en) * | 2017-07-31 | 2020-10-08 | サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク | Improved mask to protect semiconductor materials for localized etching applications |
-
1987
- 1987-08-13 JP JP62202372A patent/JPS6444927A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0210357A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Fine pattern forming material and method therefor |
WO1993004406A1 (en) * | 1991-08-13 | 1993-03-04 | Toray Industries, Inc. | Double-layer resist and method of and device for making said resist |
US5948340A (en) * | 1997-05-19 | 1999-09-07 | Koyo Seiko Co., Ltd. | Die and method for molding cage out of synthetic resin |
JP2020529728A (en) * | 2017-07-31 | 2020-10-08 | サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク | Improved mask to protect semiconductor materials for localized etching applications |
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