JPS56150828A - Manufacture of aperture iris - Google Patents

Manufacture of aperture iris

Info

Publication number
JPS56150828A
JPS56150828A JP4187681A JP4187681A JPS56150828A JP S56150828 A JPS56150828 A JP S56150828A JP 4187681 A JP4187681 A JP 4187681A JP 4187681 A JP4187681 A JP 4187681A JP S56150828 A JPS56150828 A JP S56150828A
Authority
JP
Japan
Prior art keywords
layer
wafer
aperture
substrate
protruding section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4187681A
Other languages
Japanese (ja)
Other versions
JPS5827654B2 (en
Inventor
Kanji Wada
Toshiaki Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4187681A priority Critical patent/JPS5827654B2/en
Publication of JPS56150828A publication Critical patent/JPS56150828A/en
Publication of JPS5827654B2 publication Critical patent/JPS5827654B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable to determine aperture measurements precisely and easily by a method wherein a conical-shaped protruding section is formed on a crystal substrate, an aperture material is coated on the substrate and then the substrate is removed. CONSTITUTION:An SiO2 layer 2 is formed on both sides of a single crystal Si wafer 1. Then, on the layer 2, a discoid resist pattern 3 with a radius R is formed. Then, a selective removal of etching is performed on the layer 2 using the pattern 3 as a mask, and then an isotropic etching is performed on the wafer 1 using the layer 2 remaining below the pattern 3 as a mask. Through these procedures, a discoid protruding section 4 is formed. At this time, the layer 2 is left on the upper surface only of the protruding section 4 by performing a plasma etching. Subsequently, the aperture layer 5 such as Au, Ag, Cu and the like is formed on the region excluding the upper surface of the protruding section 4 using the wafer 1 as a substrate. Then, the aperture iris is obtained by performing an etching removal on the layer 2 and the wafer 1.
JP4187681A 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm Expired JPS5827654B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4187681A JPS5827654B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4187681A JPS5827654B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13648378A Division JPS5562732A (en) 1978-11-06 1978-11-06 Preparation of aperture stop

Publications (2)

Publication Number Publication Date
JPS56150828A true JPS56150828A (en) 1981-11-21
JPS5827654B2 JPS5827654B2 (en) 1983-06-10

Family

ID=12620464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4187681A Expired JPS5827654B2 (en) 1981-03-23 1981-03-23 Manufacturing method of aperture diaphragm

Country Status (1)

Country Link
JP (1) JPS5827654B2 (en)

Also Published As

Publication number Publication date
JPS5827654B2 (en) 1983-06-10

Similar Documents

Publication Publication Date Title
JPS5656636A (en) Processing method of fine pattern
JPS56150828A (en) Manufacture of aperture iris
JPS5797626A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS5512767A (en) Semiconductor device manufacturing method
JPS56150829A (en) Manufacture of aperture iris
JPS57148371A (en) Manufacture of mesa type semiconductor device
JPS57100733A (en) Etching method for semiconductor substrate
JPS5715423A (en) Manufacture of semiconductor device
JPS56115534A (en) Formation of pattern
JPS6455826A (en) Manufacture of semiconductor device
JPS5522833A (en) Manufacturing of semiconductor device
JPS5732639A (en) Production of semiconductor device
JPS5340282A (en) Manufacture of semiconductor unit
JPS6436024A (en) Formation of wiring of semiconductor device
JPS5373075A (en) Treatment method for wafer surface
JPS6418230A (en) Manufacture of semiconductor device
JPS5735368A (en) Manufacture of semiconductor device
JPS5645029A (en) Polyimide pattern forming method
JPS56153736A (en) Manufacture of semiconductor device
JPS5460580A (en) Manufacture of semiconductor device
JPS57111028A (en) Etching method for gap
JPS5384477A (en) Forming method of dry etching mask
JPS57211785A (en) Electrode formation of semiconductor device
JPS571227A (en) Manufacture of semiconductor device