JPS5638825A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS5638825A
JPS5638825A JP11503479A JP11503479A JPS5638825A JP S5638825 A JPS5638825 A JP S5638825A JP 11503479 A JP11503479 A JP 11503479A JP 11503479 A JP11503479 A JP 11503479A JP S5638825 A JPS5638825 A JP S5638825A
Authority
JP
Japan
Prior art keywords
insulating film
projected
film
oxide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11503479A
Other languages
Japanese (ja)
Inventor
Yasuo Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11503479A priority Critical patent/JPS5638825A/en
Publication of JPS5638825A publication Critical patent/JPS5638825A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To enhance the dielectric strength at the projected part of a silicon insulating film by a method wherein a termal oxide film having the same extent of thickness with that of an insulating film to be formed afterward is formed on the surface of the silicon layer having the projected part, and the film is removed by etching to enlarge the radius of curvature at the projected part. CONSTITUTION:A silicon layer 15 is made to grow on a sapphire substrate 16, and is selectively etched using a prescribed mask to form a silicon pattern having projected parts 17. A thermal oxide film having the same extent of thickness with that of an insulating film to be formed finally is formed on the surface, and after the thermal oxide film is removed by etching to enlarge the radius of curvature at the projected parts 17, the desired insulating film and electrode conductors are formed. By this way, the dielectirc strength of insulating film at the projected parts are enhanced and the whole dielectric strength of the element can be elevated by the addition of the simple process.
JP11503479A 1979-09-07 1979-09-07 Formation of insulating film Pending JPS5638825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11503479A JPS5638825A (en) 1979-09-07 1979-09-07 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11503479A JPS5638825A (en) 1979-09-07 1979-09-07 Formation of insulating film

Publications (1)

Publication Number Publication Date
JPS5638825A true JPS5638825A (en) 1981-04-14

Family

ID=14652563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11503479A Pending JPS5638825A (en) 1979-09-07 1979-09-07 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPS5638825A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5139835A (en) * 1974-10-01 1976-04-03 Nippon Soken
JPS53142870A (en) * 1977-05-19 1978-12-12 Fujitsu Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5139835A (en) * 1974-10-01 1976-04-03 Nippon Soken
JPS53142870A (en) * 1977-05-19 1978-12-12 Fujitsu Ltd Manufacture for semiconductor device

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