JPS5687342A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687342A
JPS5687342A JP16349079A JP16349079A JPS5687342A JP S5687342 A JPS5687342 A JP S5687342A JP 16349079 A JP16349079 A JP 16349079A JP 16349079 A JP16349079 A JP 16349079A JP S5687342 A JPS5687342 A JP S5687342A
Authority
JP
Japan
Prior art keywords
silicide
injected
wafer
oxidized
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16349079A
Other languages
Japanese (ja)
Inventor
Hiroyuki Tango
Shinji Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16349079A priority Critical patent/JPS5687342A/en
Publication of JPS5687342A publication Critical patent/JPS5687342A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent metal from being deposited by silicide oxidation by a method wherein silicon is ion-injected into the silicide before the oxidation. CONSTITUTION:An Si wafer on the surface is oxidized to form SiO2 by 500Angstrom . The molybdenum silicide is attached on the SiO2 by 4000Angstrom spattering and at this stage, an Si<+> is ion-injected at 35keV in a half region of the wafer over the area of 1X10<17>/ cm<2>. After then, the wafer is applied a patterning with a mask and oxidized at 1,000 deg.C from 30min in dry O2, and then, the heat-oxidized film is removed. Thus, the region where the Si ions are injected has little molybdenum left therein due to deposition and has been put in a state that patterns are cut to the satisfaction. Simultaneously, the roughness on the surface and end face of the silicide due to the oxidation process can be prevented.
JP16349079A 1979-12-18 1979-12-18 Manufacture of semiconductor device Pending JPS5687342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16349079A JPS5687342A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16349079A JPS5687342A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687342A true JPS5687342A (en) 1981-07-15

Family

ID=15774847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16349079A Pending JPS5687342A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687342A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129471A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor device and manufacture thereof
US5541131A (en) * 1991-02-01 1996-07-30 Taiwan Semiconductor Manufacturing Co. Peeling free metal silicide films using ion implantation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129471A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor device and manufacture thereof
JPH0532910B2 (en) * 1983-01-14 1993-05-18 Tokyo Shibaura Electric Co
US5541131A (en) * 1991-02-01 1996-07-30 Taiwan Semiconductor Manufacturing Co. Peeling free metal silicide films using ion implantation

Similar Documents

Publication Publication Date Title
JPS5687342A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS5643756A (en) Manufacture of semiconductor device
JPS56111243A (en) Preparation of semiconductor device
JPS56111241A (en) Preparation of semiconductor device
JPS5633841A (en) Manufacture of semiconductor device
JPS56134739A (en) Manufacture of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS54121684A (en) Manufacture of semkconductor device
JPS5710949A (en) Manufacture of semiconductor device
JPS5539611A (en) Manufacturing semiconductor device
JPS5691476A (en) Semiconductor
JPS5475275A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device
JPS6430244A (en) Manufacture of semiconductor device
JPS56111265A (en) Manufacture of semiconductor device
JPS5787151A (en) Manufacture of semiconductor device
JPS5459873A (en) Production of semiconductor device
JPS647566A (en) Manufacture of thin film transistor
JPS6420624A (en) Manufacture of semiconductor device
JPS5681954A (en) Manufacture of semiconductor ic
JPS56169322A (en) Selective diffusion of boron into silicon
JPS5666042A (en) Minute processing method of thin film
JPS56153736A (en) Manufacture of semiconductor device
JPS5211867A (en) Manufacturing method of a semiconductor device