JPH0532910B2 - - Google Patents

Info

Publication number
JPH0532910B2
JPH0532910B2 JP58003361A JP336183A JPH0532910B2 JP H0532910 B2 JPH0532910 B2 JP H0532910B2 JP 58003361 A JP58003361 A JP 58003361A JP 336183 A JP336183 A JP 336183A JP H0532910 B2 JPH0532910 B2 JP H0532910B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58003361A
Other versions
JPS59129471A (en
Inventor
Kyoichi Suguro
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Priority to JP58003361A priority Critical patent/JPH0532910B2/ja
Publication of JPS59129471A publication Critical patent/JPS59129471A/en
Publication of JPH0532910B2 publication Critical patent/JPH0532910B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
JP58003361A 1983-01-14 1983-01-14 Expired - Lifetime JPH0532910B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58003361A JPH0532910B2 (en) 1983-01-14 1983-01-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58003361A JPH0532910B2 (en) 1983-01-14 1983-01-14

Publications (2)

Publication Number Publication Date
JPS59129471A JPS59129471A (en) 1984-07-25
JPH0532910B2 true JPH0532910B2 (en) 1993-05-18

Family

ID=11555206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003361A Expired - Lifetime JPH0532910B2 (en) 1983-01-14 1983-01-14

Country Status (1)

Country Link
JP (1) JPH0532910B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687342A (en) * 1979-12-18 1981-07-15 Toshiba Corp Manufacture of semiconductor device
JPS5730328A (en) * 1980-06-30 1982-02-18 Ibm Method of forming high melting point metallic silicide layer
JPS57149776A (en) * 1981-03-12 1982-09-16 Sony Corp Formation of high-melting point metal and silicon compound thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687342A (en) * 1979-12-18 1981-07-15 Toshiba Corp Manufacture of semiconductor device
JPS5730328A (en) * 1980-06-30 1982-02-18 Ibm Method of forming high melting point metallic silicide layer
JPS57149776A (en) * 1981-03-12 1982-09-16 Sony Corp Formation of high-melting point metal and silicon compound thin film

Also Published As

Publication number Publication date
JPS59129471A (en) 1984-07-25

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