JPS5367364A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5367364A JPS5367364A JP14273376A JP14273376A JPS5367364A JP S5367364 A JPS5367364 A JP S5367364A JP 14273376 A JP14273376 A JP 14273376A JP 14273376 A JP14273376 A JP 14273376A JP S5367364 A JPS5367364 A JP S5367364A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- mask
- oxidized
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: On the silicon oxidized film formed on a substrate surface, the mask of a silicon nitride film is formed and selectively oxidized to form a finelysized impurity mask, thereby achieving the high integration.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14273376A JPS5828733B2 (en) | 1976-11-27 | 1976-11-27 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14273376A JPS5828733B2 (en) | 1976-11-27 | 1976-11-27 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5367364A true JPS5367364A (en) | 1978-06-15 |
JPS5828733B2 JPS5828733B2 (en) | 1983-06-17 |
Family
ID=15322304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14273376A Expired JPS5828733B2 (en) | 1976-11-27 | 1976-11-27 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5828733B2 (en) |
-
1976
- 1976-11-27 JP JP14273376A patent/JPS5828733B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5828733B2 (en) | 1983-06-17 |
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