Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP4617177ApriorityCriticalpatent/JPS53130980A/en
Publication of JPS53130980ApublicationCriticalpatent/JPS53130980A/en
PURPOSE: To manufacture a device having high reliability and which is inactive for the substrate surface with Si3N4, by opening the SiO2 film on a Si substrate with a Si3N4 mask, and by adding impurity to the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP4617177A1977-04-201977-04-20Manufacture for semiconductor device
PendingJPS53130980A
(en)