JPS5645051A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5645051A JPS5645051A JP12121379A JP12121379A JPS5645051A JP S5645051 A JPS5645051 A JP S5645051A JP 12121379 A JP12121379 A JP 12121379A JP 12121379 A JP12121379 A JP 12121379A JP S5645051 A JPS5645051 A JP S5645051A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- substrate
- birdpeak
- si3n4
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To prevent the occurrence of birdpeak by providing a thin film for buffer on the interference between a semiconductor substrate and an Si3N4 film wherein the thin film has a diffusion coefficient which is equivalent to or below that of an oxidizing agent for a substrate. CONSTITUTION:Poly Si 22 is placed on a p type Si substrate 21 in piles. B is doped by opening the poly Si 22 by an Si3N4 mask 23 to form isolation layers 25a, 25b by wet oxidation. Birdpeak is extremely small as the diffusion coefficient of O2 is same for Si and poly Si. The Si3N4 23 is removed and the poly Si 22 is convereted into SiO2. Then the poly Si 22 is removed by HF solution. SiO2 26 and poly Si 27 are placed on the p type Si substrate 21 in piles for selective opening 29. After forming n<+> layers 30, 31, the poly Si 27 is selectively left to cover with PSG 32. Electrodes 33 are provided by selectively opening the PSG 32 to cover with an oxide film 34. In this composition, high integration and the improvement of the reliability for element characteristics will be attained as the occurrence of birdpeak is extremely small.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12121379A JPS5645051A (en) | 1979-09-20 | 1979-09-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12121379A JPS5645051A (en) | 1979-09-20 | 1979-09-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5645051A true JPS5645051A (en) | 1981-04-24 |
Family
ID=14805669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12121379A Pending JPS5645051A (en) | 1979-09-20 | 1979-09-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645051A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59202328A (en) * | 1983-04-28 | 1984-11-16 | Matsushita Electric Ind Co Ltd | High-frequency heating device with electric heater |
JPH01162351A (en) * | 1987-12-19 | 1989-06-26 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900350A (en) * | 1972-04-08 | 1975-08-19 | Philips Corp | Method of manufacturing semiconductor devices in which silicon oxide regions inset in silicon are formed by a masking oxidation, wherein an intermediate layer of polycrystalline silicon is provided between the substrate and the oxidation mask |
-
1979
- 1979-09-20 JP JP12121379A patent/JPS5645051A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900350A (en) * | 1972-04-08 | 1975-08-19 | Philips Corp | Method of manufacturing semiconductor devices in which silicon oxide regions inset in silicon are formed by a masking oxidation, wherein an intermediate layer of polycrystalline silicon is provided between the substrate and the oxidation mask |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59202328A (en) * | 1983-04-28 | 1984-11-16 | Matsushita Electric Ind Co Ltd | High-frequency heating device with electric heater |
JPH0343538B2 (en) * | 1983-04-28 | 1991-07-02 | Matsushita Electric Ind Co Ltd | |
JPH01162351A (en) * | 1987-12-19 | 1989-06-26 | Fujitsu Ltd | Manufacture of semiconductor device |
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