JPS5690557A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5690557A JPS5690557A JP16792079A JP16792079A JPS5690557A JP S5690557 A JPS5690557 A JP S5690557A JP 16792079 A JP16792079 A JP 16792079A JP 16792079 A JP16792079 A JP 16792079A JP S5690557 A JPS5690557 A JP S5690557A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio2
- layers
- si3n4
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To prevent a soft error due to alpha rays by a method wherein a memory cell not depending upon a depletion layer is provided, and the diffusion of carriers from the bulk side is properly intercepted. CONSTITUTION:B ions are selectively injected through SiO2 12 on a p<-> type Si substrate 11, a p<+> layer 14 is made up, the formation of a depletion layer is checked, and the layer 14 is used as an electrode of a capacity cell. The SiO2 12 is patterned by an Al mask, and a monocrystal 161 and a polycrystal 162 are manufactured. Si3N4 17 is laminated, an opening is made up, a SiO2 separating layer 18 is built up, a film 17 is patterned, p is diffused, and one sections of the layers 162, 161 are changed into n<+> layers. The whole is thermally oxidized, a surface is covered with SiO2 19, the Si3N4 17 is removed, a gate oxide film 20 is formed, and a poly Si gate 21 and other wiring are made up. Ions are injected and n<+> layers 22 are built up, the layer 21 and others are made conductive, a surface is covered with PSG23 according to a normal method, and an electrode 24 and other wiring are attached. Since information carriers are stored in the layer 162 and the depletion layer is not used in this device, the device is not subject to the influence of alpha rays at all.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16792079A JPS5690557A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16792079A JPS5690557A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5690557A true JPS5690557A (en) | 1981-07-22 |
Family
ID=15858499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16792079A Pending JPS5690557A (en) | 1979-12-22 | 1979-12-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690557A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046067A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1979
- 1979-12-22 JP JP16792079A patent/JPS5690557A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046067A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0578186B2 (en) * | 1983-08-24 | 1993-10-28 | Hitachi Ltd |
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