JPS57162428A - Manufacture of mask for exposure to x-ray - Google Patents
Manufacture of mask for exposure to x-rayInfo
- Publication number
- JPS57162428A JPS57162428A JP4747481A JP4747481A JPS57162428A JP S57162428 A JPS57162428 A JP S57162428A JP 4747481 A JP4747481 A JP 4747481A JP 4747481 A JP4747481 A JP 4747481A JP S57162428 A JPS57162428 A JP S57162428A
- Authority
- JP
- Japan
- Prior art keywords
- film
- formation
- mask
- window
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010408 film Substances 0.000 abstract 6
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 239000002985 plastic film Substances 0.000 abstract 1
- 229920006255 plastic film Polymers 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To reduce the number of faulty products in the manufacturing process by a method wherein a protective plastic film is applied after the formation of an X-ray transmitting window on an Si substrate in the manufacture of a highly reinforced, long life, large mask for exposure to a long wave X-ray. CONSTITUTION:An SiO2 thick film 12 and an Si3N4 thin film 13 are piled on the both sides of an Si substrate 11 of a principal face (100). The Si3N4 film 13 on the back side is etched into windows 14. Next, Cr and Au are laid for the formation of a ground layer 15. The layer 15 is then coated with a positive type resist 16 which is then exposed to light and developed for very narrow windows 17. The resist 16 is removed after the coating with Au of the interior of the windows 17. Au 18' serves as a mask in etching the ground layer 15 into an X-ray absorbing pattern P. Next, the SiO2 film 12 on the other side of the substrate 11 is subjected to etching, with the Si3N4 film 13 serving as a mask, first in an HF solution and then anistropically in a KOH solution for the formation of a window 19. A proper choise of films 12 and 13 thickness results in the formation of an approximately 10mm.X10mm. large window thanks to decrease in the shell forming strain on the frame F. Next, a polyimide coating 20 is applied, and the SiO2 film 12 exposed in the window 19 is etched away to complete the entire process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4747481A JPS57162428A (en) | 1981-03-31 | 1981-03-31 | Manufacture of mask for exposure to x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4747481A JPS57162428A (en) | 1981-03-31 | 1981-03-31 | Manufacture of mask for exposure to x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57162428A true JPS57162428A (en) | 1982-10-06 |
Family
ID=12776132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4747481A Pending JPS57162428A (en) | 1981-03-31 | 1981-03-31 | Manufacture of mask for exposure to x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162428A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPH04269832A (en) * | 1991-02-26 | 1992-09-25 | Shin Etsu Chem Co Ltd | Manufacture of mask for x-ray lithography |
-
1981
- 1981-03-31 JP JP4747481A patent/JPS57162428A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPH04269832A (en) * | 1991-02-26 | 1992-09-25 | Shin Etsu Chem Co Ltd | Manufacture of mask for x-ray lithography |
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