JPS5673450A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5673450A JPS5673450A JP15098179A JP15098179A JPS5673450A JP S5673450 A JPS5673450 A JP S5673450A JP 15098179 A JP15098179 A JP 15098179A JP 15098179 A JP15098179 A JP 15098179A JP S5673450 A JPS5673450 A JP S5673450A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline
- laminated
- constitution
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain an electrode containing a metal silicide having superior controllability by a method wherein an amorphous or a polycrystalline Si and a metal are laminated on a substrate, and after an energy beam is irradiated selectively to form the silicide, etching is performed on it. CONSTITUTION:Polycrystalline Si 4 and Mo 5 are laminated on oxide films 2, 3 on a p type Si substrate 1 and a thin polycrystalline Si film is formed selectively on it. When a laser beam is irradiated in pulse type on it, the laser beam is absorbed effectively at the adhering part of the film 6 to make the part to be a high temperature forming an MoSi2 film 7. After the part other than the film 7 is removed using an aqua regia and an alcoholic solution of KOH, As ions are implanted to form n<+> type layers 8, 9. Then the whole surface is covered with an SiO2 film 10, and openings are formed to adhere Al wirings 11. By this constitution, the homogeneous MoSi2 film is formed only in the wiring region, and the electrode wirings having a minute pattern can be formed having superior controllability utilizing the difference of etching speed without using a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15098179A JPS5673450A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15098179A JPS5673450A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673450A true JPS5673450A (en) | 1981-06-18 |
Family
ID=15508670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15098179A Pending JPS5673450A (en) | 1979-11-21 | 1979-11-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673450A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154228A (en) * | 1982-03-09 | 1983-09-13 | Fujitsu Ltd | Preparation of semiconductor device |
| JPS5961145A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2013105881A (en) * | 2011-11-14 | 2013-05-30 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| CN109234728A (en) * | 2018-10-18 | 2019-01-18 | 江苏理工学院 | A kind of molybdenum alloy surface laser melting coating preparation MoSi2The method of coating |
-
1979
- 1979-11-21 JP JP15098179A patent/JPS5673450A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154228A (en) * | 1982-03-09 | 1983-09-13 | Fujitsu Ltd | Preparation of semiconductor device |
| JPS5961145A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2013105881A (en) * | 2011-11-14 | 2013-05-30 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| CN109234728A (en) * | 2018-10-18 | 2019-01-18 | 江苏理工学院 | A kind of molybdenum alloy surface laser melting coating preparation MoSi2The method of coating |
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