JPS57133649A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a reliable connection between metals by a method wherein, in the manufacture of a semiconductor device having multilayer interconnected constitution, when the internal metals are connected with upper electrode wiring metal making use of a grown up mustache type crystal of lower electrode wiring metal, a metal accelerating the growth of said mustache type crystal is provided as a pad under the lower metal. CONSTITUTION:The first insulating film 2 is expanded on the substrate 1 whereon internal or surface processing has been performed and Ti.W film 13 is formed on the said insulating film 2 but the film 13 is entirely removed with the exception of the part for internal connection by means of photoengraving process and the like. Then, the first insulating film 2 is entirely covered with Al layer 3 to be the first layer wiring and the wiring pattern 4 is partially formed including the said film 13 by means of etching to be further entirely covered with the second insulating film 5. Later, a mustache type crystal 9 is grown up out of the Al pattern 4 on the film 13 by means of the heattreatment at 300-400 deg.C. At this time, the crystal growing speed is approximate 5 times faster than the speed in the case without the film 13 as a pad making the crystal 9 project above the surface of the said film 5. After performing said procedures, Al wiring 8 of the second layer is connected to said crystal 9.