KR950012872A - Selective investment ridge semiconductor laser diode and manufacturing method thereof - Google Patents

Selective investment ridge semiconductor laser diode and manufacturing method thereof Download PDF

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KR950012872A
KR950012872A KR1019930021456A KR930021456A KR950012872A KR 950012872 A KR950012872 A KR 950012872A KR 1019930021456 A KR1019930021456 A KR 1019930021456A KR 930021456 A KR930021456 A KR 930021456A KR 950012872 A KR950012872 A KR 950012872A
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layer
type
conductive
ingap
ridge
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KR1019930021456A
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KR100287204B1 (en
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김준영
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

선택적 매몰 릿지형 반도체 레이저 다이오드 및 그의 제조 방법이 개시되어 있다. 소정 n형 GaAs 기판(201)상에 n형 GaAs 버퍼층(202), n형 InGaAlP 클래드층(203), InGaP 활성층(204), p형 InGaAlP 클래드층(205), 제1 p형 InGaP 통전용이층(206a) 및 p형 GaAs 보호층(211)을 순차적으로 성장시킨 후, 소정 마스크 패턴을 사용하여 p형 InGaAlP 클래드층(205), 제1 p형 InGaP 통전용이층(206a) 및 p형 GaAs 보호층(211)을 식긱하여 릿지를 형성한다. p형 InGaAlP 클래드층(205)중 릿지외의 부위에는 n형 InGaAsP 전류 차단층(207)을 성장시키고, 이어서 마스크패턴의 성장시 손상된 p형 GaAs 보호층(211)과 마스크 패턴을 제거한다. 그런다음, n형 InGaAsP 전류 차단층(207) 및 제1 p형 InGaP 통전용이층(206a)으로 이루어진 표면의 상부에는 제2 p형 InGaP 통전용이층(206b) 및 p형 InGaAsP 캡층(208)을 순차적으로 성장시킨다. 이와 같은 제조 방법은 p형 GaAs 보호층(211)을 도입함으로써, 그 하부에 위치한 층들의 결정질이 저하되는 것을 방지함과 동시에 재결정 성장되는 층들이 저온에서 성장될 수 있기 때문에 이미 성장되어 있는 층들에서 도판트들이 열 확산되어 신뢰도가 저하되는 것을 방지할 수 있다.A selective buried ridge semiconductor laser diode and a method of manufacturing the same are disclosed. N-type GaAs buffer layer 202, n-type InGaAlP cladding layer 203, InGaP active layer 204, p-type InGaAlP cladding layer 205, first p-type InGaP passivation on a predetermined n-type GaAs substrate 201 After growing the layer 206a and the p-type GaAs protective layer 211 sequentially, the p-type InGaAlP cladding layer 205, the first p-type InGaP conducting bilayer 206a and the p-type using a predetermined mask pattern The GaAs protective layer 211 is patterned to form ridges. The n-type InGaAsP current blocking layer 207 is grown on the portion of the p-type InGaAlP cladding layer 205 other than the ridge, and then the p-type GaAs protective layer 211 and the mask pattern damaged during the growth of the mask pattern are removed. Then, on the top of the surface consisting of the n-type InGaAsP current blocking layer 207 and the first p-type InGaP barrier layer 206a, a second p-type InGaP barrier layer 206b and a p-type InGaAsP cap layer 208 are formed. ) Grow sequentially. Such a manufacturing method prevents deterioration of the crystallinity of the layers positioned below the p-type GaAs protective layer 211 and at the same time re-crystallized layers can be grown at low temperatures in the already grown layers. It is possible to prevent the dopants from thermally diffusing to lower the reliability.

Description

선택적 매몰 릿지형 반도체 레이저 다이오드 및 그의 제조 방법Selective investment ridge semiconductor laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도 내지 제3D도는 본 발명에 따른 선택적 매몰 릿지형 반도체 레이저 다이오드의 제조 공정시 나타나는 중간 구조물의 단면도들을 순차적으로 나타낸 것이다.3A to 3D show cross-sectional views of intermediate structures appearing in the manufacturing process of the selective buried ridge type semiconductor laser diode according to the present invention.

Claims (6)

제1도전형 GaAs 기판; 상기 제1도전형 GaAs 기판의 상부에 순차적으로 형성되어 있는 제1도전형 InGaAlP 클래드층 및 InGaP 활성층; 상기 InGaP 활성층상에 형성되어 있으며, 중앙 상부에 릿지 구조를 갖는 제2도전형 InGaAlP 클래드층; 상기 제2도전형 InGaAlP 클래드층의 릿지 상부에 형성되어 있는 제1InGaAlP 통전용이층; 상기 제2도전형 InGaAlP 클래드층중 상기 릿지가 아닌 부위의 상부에 형성되어있는 제1도전형 InGaAsP 전류차단층; 및 상기 제1InGaP 통전용이층 및 제1도전형 InGaAsP 전류차단층로 이루어진 표면의 상부에 형성되어 있는 제2도전형 InGaAsP 캡층을 구비하는 것을 특징으로 하는 선택적 매몰 릿지형 반도체 레이저 다이오드.A first conductive GaAs substrate; A first conductive InGaAlP cladding layer and an InGaP active layer sequentially formed on the first conductive GaAs substrate; A second conductive type InGaAlP cladding layer formed on the InGaP active layer and having a ridge structure on a center thereof; A first InGaAlP passivation layer formed on the ridge of the second conductive InGaAlP cladding layer; A first conductive InGaAsP current blocking layer formed on an upper portion of the second non-ridge portion of the second conductive InGaAlP cladding layer; And a second conductive type InGaAsP cap layer formed on an upper surface of the first InGaP conductive double layer and the first conductive type InGaAsP current blocking layer. 제1항에 있어서, 상기 제1InGaP 통전용이층 및 상기 제1도전형 InGaAsP 전류차단층로 이루어진 표면과, 상기 제2도전형 InGaAsP 캡층 사이에 형성되어 있는 제2InGaP 통전용이층; 및 상기 제1도전형 GaAs 기판과 상기 제1도전형 InGaAlP 클래드층 사이에 제1도전형 GaAs 버퍼층을 더 구비하는 것을 특징으로 하는 선택적 매몰 릿지형 반도체 레이저 다이오드.2. The semiconductor device of claim 1, further comprising: a second InGaP conductive bilayer formed between the surface consisting of the first InGaP conductive bilayer and the first conductive InGaAsP current blocking layer and the second conductive InGaAsP cap layer; And a first conductivity type GaAs buffer layer between the first conductivity type GaAs substrate and the first conductivity type InGaAlP cladding layer. 제1항에 있어서, 상기 제1도전형 InGaAlP 클래드층 및 상기 제2도전형 InGaAlP 클래드층은 In0.5(Ga0.3Al0.7)0.5P로 구성되고, 상기 InGaP 활성층은 In0.5Ga0.5P로 구성되는 것을 특징으로 하는 매몰 릿지형 반도체 레이저 다이오드.The method of claim 1, wherein the first conductive InGaAlP cladding layer and the second conductive InGaAlP cladding layer is composed of In 0.5 (Ga 0.3 Al 0.7 ) 0.5 P, the InGaP active layer is composed of In 0.5 Ga 0.5 P. An investment ridge type semiconductor laser diode, characterized in that. 소정 반도체 기판의 상부에 하부 클래드층, 활성층, 상부 클래드층, 제1통전 용이층 및 상기 제1통전 용이층과 다른 물질로 구성되는 보호층을 순차적으로 성장시키는 공정; 상기 보호층의 상부에 릿지 형성을 위한 마스크 패턴을 형성하는 공정; 상기 마스크 패턴을 식각 마스크로 사용하여, 상기 보호층, 상기 제1통전 용이층 및 상기 상부 클래드층을 선택적으로 식각하여 릿지를 형성하는 공정; 상기 마스크 패턴을 결정성장 방지 마스크로 사용하여, 상기 상부 클래드층중 릿지가 형성되지 아니한 부위의 상부에 전류차단층을 형성하는 공정; 상기 마스크 패턴을 제거하는 공정; 및 상기 보호층을 제거하는 공정을 포함하는 것을 특징으로 하는 선택적 매몰 릿지형 반도체 레이저 다이오드의 제조 방법.Sequentially growing a lower clad layer, an active layer, an upper clad layer, a first passivation layer, and a protective layer made of a material different from the first passivation layer on a predetermined semiconductor substrate; Forming a mask pattern for forming a ridge on the protective layer; Forming a ridge by selectively etching the passivation layer, the first conductive layer, and the upper clad layer by using the mask pattern as an etching mask; Forming a current blocking layer on an upper portion of the upper cladding layer in which no ridge is formed by using the mask pattern as a crystal growth prevention mask; Removing the mask pattern; And removing the protective layer. 제4항에 있어서, 상기 제1통전용이층 및 상기 전류 차단층으로 이루어진 표면의 상부에 제2통전 용이층 및 캡층을 순차적으로 성장시키는 공정을 더 포함하는 것을 특징으로 하는 선택적 매몰 릿지형 반도체 레이저 다이오드의 제조 방법.The selective buried ridge type semiconductor according to claim 4, further comprising a step of sequentially growing a second easy-conducting layer and a cap layer on top of the surface consisting of the first pass-through bilayer and the current blocking layer. Method of manufacturing a laser diode. 제4항에 있어서, 상기 제1통전용이층은 InGaP로 구성되고, 상기 전류 차단층은 InGaAsP로 구성되고, 상기 보호층은 GaAs로 구성되며, 상기 보호층을 제거하는 공정은 황산계 식각 용액을 사용하여 수행되는 것을 특징으로 하는 선택적 매몰 릿지형 반도체 레이저 다이오드의 제조 방법.The method of claim 4, wherein the first passivation layer is made of InGaP, the current blocking layer is made of InGaAsP, the protection layer is made of GaAs, and the process of removing the protection layer is a sulfuric acid etching solution. Method for producing a selective buried ridge-type semiconductor laser diode, characterized in that performed using. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021456A 1993-10-15 1993-10-15 Semiconductor laser diode of selective buried ridge type and manufacturing method thereof KR100287204B1 (en)

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