JPS647682A - Manufacture of embedded semiconductor laser - Google Patents

Abstract

PURPOSE:To make it possible to prevent a leakage current flowing through a semiconductor layer to be formed this on both sides of a mesa stripe structure, by embedding with a plurality of semiconductor layers after a p-type dopant has been diffused on the side of the mesa stripe structure formed by eliminating both sides of a wafer which a plurality of semiconductor layers are laminated on a p-type substrate. CONSTITUTION:Both sides of an original laminate wafer having semiconductor layers 2-4 formed on a p-type substrate 1 are eliminated to form a mesa stripe structure M. A p-type dopant is diffused on the side of the mesa stripe structure M. Next, the diffused mesa stripe structure M is embedded with semiconductor layers 6-8. For example, with the p-type dopant Zn doped in unsaturated InP melt 13, a wafer 12 having the mesa stripe structure M is brought into contact with the melt 13, performing the melt back. Then the p-type dopant is diffused on both sides of the mesa stripe structure M, resulting in a thin p-layer 20 formed. After this, when the first embedded layer 6 is grown, an n-layer 6a is formed on both sides of the mesa stripe structure M, causing p-n reversal junction to from against a leak current.