JPS6428871A - Superconducting transistor - Google Patents

Superconducting transistor

Info

Publication number
JPS6428871A
JPS6428871A JP62183969A JP18396987A JPS6428871A JP S6428871 A JPS6428871 A JP S6428871A JP 62183969 A JP62183969 A JP 62183969A JP 18396987 A JP18396987 A JP 18396987A JP S6428871 A JPS6428871 A JP S6428871A
Authority
JP
Japan
Prior art keywords
layer
hetero
thick
nondoped
boundary surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183969A
Other languages
Japanese (ja)
Inventor
Akiyoshi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62183969A priority Critical patent/JPS6428871A/en
Publication of JPS6428871A publication Critical patent/JPS6428871A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To make it possible to manufacture easily a superconducting transistor, by applying a usual light exposure, by using a structure having a two-dimensional electron gas system stored in an undoped semiconductor layer wherein the band gap of a hetero junction boundary surface is small. CONSTITUTION:A nondoped GaAs layer 2 of 5000Angstrom thick, a nondoped Al0.3Ga0.7 As spacer layer 3 of 150Angstrom thick, and an Si doped N-type A0.3Ga0.7As layer 4 are formed in order on a semiinsulative GaAs substrate 1. A source electrode 15 and a drain electrode 16 composed of superconductor formed of an Nb thin film are formed, and a gate electrode 7 composed of Al is formed. A sidewall 8 formed of SiN separates a gate electrode 7 from the source and drain electrodes 15, 16. The semiconductor layer has a so-called selection doping hetero-structure. In the hetero-boundary surface, two-dimensional electron gas 20 is formed, wherein electron supplied from an N-type AlGaAs layer is stored.
JP62183969A 1987-07-23 1987-07-23 Superconducting transistor Pending JPS6428871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183969A JPS6428871A (en) 1987-07-23 1987-07-23 Superconducting transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183969A JPS6428871A (en) 1987-07-23 1987-07-23 Superconducting transistor

Publications (1)

Publication Number Publication Date
JPS6428871A true JPS6428871A (en) 1989-01-31

Family

ID=16144992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183969A Pending JPS6428871A (en) 1987-07-23 1987-07-23 Superconducting transistor

Country Status (1)

Country Link
JP (1) JPS6428871A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449929A (en) * 1992-12-21 1995-09-12 Mitsubishi Denki Kabushiki Kaisha IPG transistor semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449929A (en) * 1992-12-21 1995-09-12 Mitsubishi Denki Kabushiki Kaisha IPG transistor semiconductor integrated circuit device

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