JPS6474765A - Hetero-junction fet - Google Patents

Hetero-junction fet

Info

Publication number
JPS6474765A
JPS6474765A JP23304187A JP23304187A JPS6474765A JP S6474765 A JPS6474765 A JP S6474765A JP 23304187 A JP23304187 A JP 23304187A JP 23304187 A JP23304187 A JP 23304187A JP S6474765 A JPS6474765 A JP S6474765A
Authority
JP
Japan
Prior art keywords
layer
inalas
doped
gate electrode
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23304187A
Other languages
Japanese (ja)
Other versions
JPH088352B2 (en
Inventor
Yoshihiro Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23304187A priority Critical patent/JPH088352B2/en
Publication of JPS6474765A publication Critical patent/JPS6474765A/en
Publication of JPH088352B2 publication Critical patent/JPH088352B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of Schottky characteristics due to heating at the time of a process and heating in subsequent processes by using Si-doped InAlAs as a two-dimensional electron gas supply layer and Al as a gate electrode and inserting a GaAs layer between the two-dimensional electron gas supply layer and the gate electrode. CONSTITUTION:Undoped InAlAs as a buffer layer 2, undoped InGaAs as a channel layer 3, undoped InAlAs as a spacer 4, and Si-doped N-InAlAs as an electron supply layer 5 are grown onto an InP substrate 1. Si-doped N-GaAs is grown onto the electron supply layer 5 as a diffusion preventive layer 6. Al is vacuum-deposited onto the layer 6, and a gate electrode is formed. Lastly, a source electrode 8 and a drain electrode 9 are shaped, and a surface inactivating film 10 is attached. An FET with a Schottky junction having the constitution displays excellent Schottky characteristics better than FETs with Schottky junctions having conventional structure in which no diffusion preventive layer 6 is formed.
JP23304187A 1987-09-17 1987-09-17 Heterojunction FET Expired - Fee Related JPH088352B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23304187A JPH088352B2 (en) 1987-09-17 1987-09-17 Heterojunction FET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23304187A JPH088352B2 (en) 1987-09-17 1987-09-17 Heterojunction FET

Publications (2)

Publication Number Publication Date
JPS6474765A true JPS6474765A (en) 1989-03-20
JPH088352B2 JPH088352B2 (en) 1996-01-29

Family

ID=16948874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23304187A Expired - Fee Related JPH088352B2 (en) 1987-09-17 1987-09-17 Heterojunction FET

Country Status (1)

Country Link
JP (1) JPH088352B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254731A (en) * 1989-03-28 1990-10-15 Matsushita Electric Ind Co Ltd Hetero-junction type field effect transistor
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
JPH04226041A (en) * 1990-04-11 1992-08-14 Hughes Aircraft Co Hemt strucutre provided with passivation donor layer
US5319223A (en) * 1991-07-26 1994-06-07 Kabushiki Kaisha Toshiba High electron mobility transistor
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
JP2001044417A (en) * 1999-07-26 2001-02-16 Fujitsu Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254731A (en) * 1989-03-28 1990-10-15 Matsushita Electric Ind Co Ltd Hetero-junction type field effect transistor
JPH04226041A (en) * 1990-04-11 1992-08-14 Hughes Aircraft Co Hemt strucutre provided with passivation donor layer
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
US5319223A (en) * 1991-07-26 1994-06-07 Kabushiki Kaisha Toshiba High electron mobility transistor
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
JP2001044417A (en) * 1999-07-26 2001-02-16 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH088352B2 (en) 1996-01-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees