JPS6450570A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6450570A
JPS6450570A JP20845587A JP20845587A JPS6450570A JP S6450570 A JPS6450570 A JP S6450570A JP 20845587 A JP20845587 A JP 20845587A JP 20845587 A JP20845587 A JP 20845587A JP S6450570 A JPS6450570 A JP S6450570A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor device
heterojunction
energy gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20845587A
Other languages
Japanese (ja)
Inventor
Masahiko Sasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20845587A priority Critical patent/JPS6450570A/en
Publication of JPS6450570A publication Critical patent/JPS6450570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate the growth of crystal as well as to make the high-speed operation of the title semiconductor device possible by a method wherein a heterojunction, formed by a channel layer consisting of the first semiconductor layer and the second semiconductor layer, having the energy gap and the lattice constant larger than those of the first semiconductor, are provided. CONSTITUTION:The heterojunction, formed by the channel layer 3 consisting of the first semiconductor layer, and the second semiconductor layer 4, having the energy gap and the grating constant larger than those of the first semiconductor, is provided on the title semiconductor device. for example, AlAsSb layers 2B1-2Bn, as a superlattice buffer, and InGaAs layers 2W1-2Wn-1 are alternately grown 20 cycles on a semiinsulative InP substrate 1, and an InxGa1-xAs (x < 0.53) channel layer 3, an n-AlAsySb1-y (y<0.46) electron supply layer 4, and an n-InGaAs contact layer 5 are successively grown on a semiinsulative InP substrate 1. Then, a gate electrode G consisting of an Al layer or a Ti/Pt/Al layer is formed on the electron supply layer 4 located in a recess, the source and drain electrodes S and D consisting of an AuGe/Au layer is formed on the contact layer 5, and an HEMT is constituted.
JP20845587A 1987-08-21 1987-08-21 Semiconductor device Pending JPS6450570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20845587A JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20845587A JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450570A true JPS6450570A (en) 1989-02-27

Family

ID=16556476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20845587A Pending JPS6450570A (en) 1987-08-21 1987-08-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450570A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148245A (en) * 1989-07-12 1992-09-15 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
US5223724A (en) * 1990-07-31 1993-06-29 At & T Bell Laboratories Multiple channel high electron mobility transistor
US5266506A (en) * 1990-07-31 1993-11-30 At&T Bell Laboratories Method of making substantially linear field-effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
JP2011166138A (en) * 2010-02-10 2011-08-25 Taiwan Semiconductor Manufacturing Co Ltd Density of state engineered field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148245A (en) * 1989-07-12 1992-09-15 Fujitsu Limited Semiconductor device having a selectively doped heterostructure
US5223724A (en) * 1990-07-31 1993-06-29 At & T Bell Laboratories Multiple channel high electron mobility transistor
US5266506A (en) * 1990-07-31 1993-11-30 At&T Bell Laboratories Method of making substantially linear field-effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
JP2011166138A (en) * 2010-02-10 2011-08-25 Taiwan Semiconductor Manufacturing Co Ltd Density of state engineered field effect transistor

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