TW428292B - InAlAs/InGaAs heterojunction field effect type semiconductor device - Google Patents
InAlAs/InGaAs heterojunction field effect type semiconductor deviceInfo
- Publication number
- TW428292B TW428292B TW085115572A TW85115572A TW428292B TW 428292 B TW428292 B TW 428292B TW 085115572 A TW085115572 A TW 085115572A TW 85115572 A TW85115572 A TW 85115572A TW 428292 B TW428292 B TW 428292B
- Authority
- TW
- Taiwan
- Prior art keywords
- inalas
- semiconductor device
- type semiconductor
- field effect
- heterojunction field
- Prior art date
Links
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Abstract
In an InAlAs/InGaAs heterojunction field type semiconductor device including an InP substrate (1), a superlattice layer (11 to 18) formed by periods of InAs/AlAs or InAs/AlGaAs is formed over an InGaAs channel layer (3) which is formed over the InP substrate.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7330221A JP2718406B2 (en) | 1995-12-19 | 1995-12-19 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428292B true TW428292B (en) | 2001-04-01 |
Family
ID=18230213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085115572A TW428292B (en) | 1995-12-19 | 1996-12-17 | InAlAs/InGaAs heterojunction field effect type semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US5907164A (en) |
EP (1) | EP0780906B1 (en) |
JP (1) | JP2718406B2 (en) |
DE (1) | DE69622135T2 (en) |
TW (1) | TW428292B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390541A (en) * | 2015-10-30 | 2016-03-09 | 江苏能华微电子科技发展有限公司 | HEMT epitaxial structure and preparation method thereof |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223651A (en) * | 1997-02-05 | 1998-08-21 | Nec Corp | Field effect transistor |
US6531414B1 (en) * | 1999-05-05 | 2003-03-11 | The United States Of America As Represented By The National Security Agency | Method of oxidizing strain-compensated superlattice of group III-V semiconductor |
US6472695B1 (en) * | 1999-06-18 | 2002-10-29 | The Regents Of The University Of California | Increased lateral oxidation rate of aluminum indium arsenide |
TWI288435B (en) | 2000-11-21 | 2007-10-11 | Matsushita Electric Ind Co Ltd | Semiconductor device and equipment for communication system |
US6814738B2 (en) | 2001-01-23 | 2004-11-09 | Depuy Acromed, Inc. | Medical impacting device and system |
US6709439B2 (en) | 2001-10-30 | 2004-03-23 | Depuy Spine, Inc. | Slaphammer tool |
JP4050128B2 (en) * | 2002-10-24 | 2008-02-20 | 松下電器産業株式会社 | Heterojunction field effect transistor and manufacturing method thereof |
JP4224423B2 (en) | 2003-06-10 | 2009-02-12 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
US7479651B2 (en) | 2004-12-06 | 2009-01-20 | Panasonic Corporation | Semiconductor device |
JP2012227227A (en) * | 2011-04-15 | 2012-11-15 | Advanced Power Device Research Association | Semiconductor device |
US9947755B2 (en) | 2015-09-30 | 2018-04-17 | International Business Machines Corporation | III-V MOSFET with self-aligned diffusion barrier |
RU196935U1 (en) * | 2019-10-09 | 2020-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | InAlAs / InGaAs two-period gauge superlattice on an InP substrate |
CN114481088B (en) * | 2022-04-18 | 2022-07-01 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of superlattice active layer and semiconductor light-emitting structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63311772A (en) * | 1987-06-13 | 1988-12-20 | Fujitsu Ltd | Field-effect semiconductor device |
JP2879250B2 (en) * | 1990-07-30 | 1999-04-05 | 富士通株式会社 | Field effect semiconductor device |
JP2964637B2 (en) * | 1990-11-30 | 1999-10-18 | 日本電気株式会社 | Field effect transistor |
EP0565054A3 (en) * | 1992-04-09 | 1994-07-27 | Hughes Aircraft Co | N-type antimony-based strained layer superlattice and fabrication method |
EP0569259A3 (en) * | 1992-05-08 | 1995-03-01 | Furukawa Electric Co Ltd | Multiquantum barrier field effect transistor. |
US5268582A (en) * | 1992-08-24 | 1993-12-07 | At&T Bell Laboratories | P-N junction devices with group IV element-doped group III-V compound semiconductors |
JP2500453B2 (en) * | 1993-06-28 | 1996-05-29 | 日本電気株式会社 | Field effect transistor |
-
1995
- 1995-12-19 JP JP7330221A patent/JP2718406B2/en not_active Expired - Fee Related
-
1996
- 1996-12-16 US US08/767,372 patent/US5907164A/en not_active Expired - Fee Related
- 1996-12-17 TW TW085115572A patent/TW428292B/en not_active IP Right Cessation
- 1996-12-19 EP EP96120544A patent/EP0780906B1/en not_active Expired - Lifetime
- 1996-12-19 DE DE69622135T patent/DE69622135T2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390541A (en) * | 2015-10-30 | 2016-03-09 | 江苏能华微电子科技发展有限公司 | HEMT epitaxial structure and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0780906A2 (en) | 1997-06-25 |
JPH09172164A (en) | 1997-06-30 |
JP2718406B2 (en) | 1998-02-25 |
DE69622135D1 (en) | 2002-08-08 |
DE69622135T2 (en) | 2003-01-30 |
US5907164A (en) | 1999-05-25 |
EP0780906B1 (en) | 2002-07-03 |
EP0780906A3 (en) | 1997-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW428292B (en) | InAlAs/InGaAs heterojunction field effect type semiconductor device | |
CA1237824A (en) | Resonant tunneling semiconductor device | |
WO1996030945A3 (en) | Integrated heterostructures of group iii-v nitride semiconductor materials and methods for fabricating the same | |
CA2039415A1 (en) | Buried channel heterojunction field effect transistor | |
DE69637437D1 (en) | In InP / InGaAs monolithic integrated demultiplexer, photodetector and heterojunction bipolar transistor | |
EP0378919A3 (en) | High band-gap opto-electronic device and method for making same | |
Vinal et al. | Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection | |
EP0135313A3 (en) | Photodetector | |
EP0533203A3 (en) | Method for selectively etching a iii-v semiconductor, in the production of a field effect transistor | |
EP0803912A4 (en) | Field effect transistor | |
JPS538572A (en) | Field effect type transistor | |
JPS6474765A (en) | Hetero-junction fet | |
TW200501423A (en) | Compound semiconductor epitaxial substrate and production process thereof | |
JPS6450570A (en) | Semiconductor device | |
JPS6420669A (en) | Field-effect semiconductor device | |
JPS6441273A (en) | Field effect transistor | |
JPS5412261A (en) | Semiconductor wafer | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPH0243341B2 (en) | ||
Kuo | Gas source molecular beam epitaxial growth and device applications in In sub 0 sub. sub 5 Ga sub 0 sub. sub 5 P and In sub 0 sub. sub 5 Al sub 0 sub. sub 5 P heterostructures | |
EP0587911A4 (en) | ||
TW328165B (en) | The channel-type field effect transistor with pseudomorphic step doping | |
JPS5434687A (en) | Semiconductor device | |
JPS57118676A (en) | Semiconductor device | |
JPS53116079A (en) | Transistor and its manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |