CN114481088B - Manufacturing method of superlattice active layer and semiconductor light-emitting structure - Google Patents

Manufacturing method of superlattice active layer and semiconductor light-emitting structure Download PDF

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CN114481088B
CN114481088B CN202210401562.1A CN202210401562A CN114481088B CN 114481088 B CN114481088 B CN 114481088B CN 202210401562 A CN202210401562 A CN 202210401562A CN 114481088 B CN114481088 B CN 114481088B
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film
path
flow
source gas
source
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CN114481088A (en
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程洋
赵武
王俊
郭银涛
谭少阳
张宇荧
于涛
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Suzhou Everbright Photonics Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Suzhou Everbright Photonics Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

Abstract

The invention provides a method for manufacturing a superlattice active layer and a semiconductor light-emitting structure, which forms any single layer of InxGa1‑xIn the process of the As film, a first path of gallium source gas and a second path of gallium source gas are adopted, and the flow rate of the second path of gallium source gas is far smaller than that of the first path of gallium source gas; for multiple layers of In of different thicknessesxGa1‑xAs film, the average flow of the second path of gallium source gas follows InxGa1‑xThe increase in thickness of the As film; and/or In forming an arbitrary monolayeryAl1‑yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, and the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas; for multiple layers of In of different thicknessesyAl1‑yAs film, the average flow of the second aluminum source gas is InyAl1‑yThe thickness of the As film increases.

Description

Manufacturing method of superlattice active layer and semiconductor light-emitting structure
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a superlattice active layer and a manufacturing method of a semiconductor light-emitting structure.
Background
The semiconductor laser structure is an important photoelectric device, can directly convert electric energy into light energy, and has the advantages of small volume, high efficiency, wide adjustable spectral range and the like. For example, a quantum cascade laser is a new semiconductor laser which has emerged in recent years, the light-emitting wavelength of the quantum cascade laser can cover the middle infrared to terahertz wave band, and the quantum cascade laser has a wide application prospect in the fields of trace gas detection, free space optical communication and the like. The quantum cascade laser has high manufacturing difficulty, and for example, a far infrared (with a wavelength of 8-12 μm) quantum cascade laser is taken as an example, and the manufacturing procedures of the quantum cascade laser comprise a primary epitaxial growth process, a photoetching and etching process, a secondary epitaxial growth process, a thinning process, a metal electrode manufacturing process, a cleavage coating film, a packaging test process and the like. The primary epitaxial growth process is a key process in the manufacturing process of the quantum cascade laser, and the quality of a material grown by the primary epitaxial growth directly determines the upper limit of the performance of the quantum cascade laser.
The semiconductor light emitting structure is generally grown on an indium phosphide substrate, and an InP lower confinement layer, an InGaAs lower waveguide layer, a superlattice active layer, an InGaAs upper waveguide layer, an InP upper confinement layer, an InP contact layer, and the like are provided in this order from the substrate upward in the growth direction. Wherein, the superlattice active layer is the core of the semiconductor light-emitting structure, and generally comprises 30-50 periods, each period is composed of a plurality of thin layers, the thickness of each thin layer is different from 1 angstrom to 300 angstrom, and the total number of layers of the whole active layer is 600-1500 layers. Growing superlattice active layers presents a number of difficulties including control of the material composition of each layer, control of the thickness of each layer of material, control of the sharpness of the interface between any two layers of material, control of the stress location of the overall material, etc.
The material composition is one of the key controlling factors during the growth of the superlattice active layer. There is a great difficulty in controlling the composition of a thin layer material having a thickness of less than 300 angstroms. This is mainly due to the influence of the interface effect, even under the same growth conditions, the composition of the thin layer material gradually changes with the increase of the growth thickness, and the average composition of the thin layer materials of different layers is poor in consistency. Therefore, the material composition is difficult to control accurately, and the growth quality of the superlattice active layer is influenced.
Currently, the actually grown superlattice active layer is not consistent with the designed superlattice active layer, and the performance of the superlattice active layer and the semiconductor light emitting structure is finally affected.
Disclosure of Invention
The invention solves the technical problem of how to effectively overcome the problem of poor average component consistency among different layers in the growth process of a superlattice active layer.
In order to solve the above technical problems, the present invention provides a method for manufacturing a superlattice active layer, including: forming a plurality of sub-active layer units which are periodically arranged, wherein the step of forming the sub-active layer units comprises the following steps: forming several layers of InxGa1-xAn As film; forming several layers of InyAl1-yAn As film; in sub-active layer unitxGa1-xAs film and InyAl1-yAs films are alternately arranged at intervals, and at least part of In the sub-active layer unitxGa1-xAs film thickness is different, at least part of In sub-active layer unityAl1-yThe thickness of the As film is different; in forming an arbitrary single layerxGa1-xA first path of gallium source gas and a second path of gallium source gas are adopted in the As film process, the flow rate of the second path of gallium source gas is far smaller than that of the first path of gallium source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of gallium source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of gallium source gas; for multiple layers of In of different thicknessesxGa1-xThe average flow of the second path of gallium source gas is along with InxGa1-xThe increase in thickness of the As film; and/or, In forming an arbitrary monolayeryAl1-yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of aluminum source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of aluminum source gas; for multiple layers of In of different thicknessesyAl1-yAs film, the average flow of the second aluminum source gas is InyAl1-yThe thickness of the As film increases.
Optionally, In is formed In any single layerxGa1-xIn the process of the As film, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is constant; for different layers of InxGa1-xThe As film adopts the same flow of the first path of gallium source gas; and/or, In forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the first path of aluminum source gas is constant, and the flow of the second path of aluminum source gas is constant; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
Optionally, In is formed In any single layerxGa1-xIn the As film process, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is linearly increased; for different layers of InxGa1-xThe As film adopts the same flow of the first path of gallium source gas; and/or, In forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the adopted first path of aluminum source gas is constant, and the flow of the adopted second path of aluminum source gas is increased linearly; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
Optionally, for different layers of InxGa1-xAs film, arbitrary monolayer of InxGa1-xThe increment rate of the flow of the second path of gallium source gas adopted In the As film growth process is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yAs film, arbitrary monolayer of InyAl1-yThe increment rate of the flow of the second path of aluminum source gas adopted In the As film growth process is along with InyAl1-yThe thickness of the As film increases.
Optionally, for any monolayer of InxGa1-xAs film on which In is formedxGa1-xInitiation of As filmThe flow of the second path of gallium source gas adopted at the moment is formed InxGa1-xThe As film adopts 20-30% of the flow average flow of the second path of gallium source gas to form InxGa1-xThe flow rate of the second path of gallium source gas adopted at the termination time of the As film is InxGa1-xThe flow average flow of the second path of gallium source gas adopted by the As film is 180-200%.
Optionally, for any monolayer of InyAl1-yAs film on which In is formedyAl1-yThe flow rate of the second aluminum source gas adopted at the starting time of the As film is InyAl1-yThe As film is formed by adopting 20-30% of the flow average flow of the second aluminum source gasyAl1-yThe flow rate of the second aluminum source gas used at the termination time of the As film is InyAl1-yThe flow average flow of the second aluminum source gas adopted by the As membrane is 180-200%.
Optionally, In is formed In any single layerxGa1-xIn the process of the As film, a first path of etching gas source is introduced, and the etching rate of the first path of etching gas source to In atoms is higher than that to Ga atoms; and/or, In forming an arbitrary monolayeryAl1-yAnd In the process of the As film, a second path of etching gas source is introduced, and the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
Optionally, for different layers of InxGa1-xAs film, the average flow of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yAs film, the average flow of the second path of etching gas source is along with InyAl1-yThe thickness of the As film increases.
Optionally, In is formed In any single layerxGa1-xIn the process of the As film, the flow of the first path of etching gas source is constant; and/or, In forming an arbitrary monolayeryAl1-yAnd in the process of the As film, the flow of the second path of etching gas source is constant.
Optionally, in the formation of an arbitrary monolayerInxGa1-xIn the process of the As film, the flow of a first path of etching gas source is linearly increased; and/or, In forming an arbitrary monolayeryAl1-yIn the process of the As film, the flow of the second path of etching gas source is increased linearly.
Optionally, for different layers of InxGa1-xAs film, arbitrary monolayer of InxGa1-xThe linear increasing rate of the flow of the first path of etching gas source adopted In the As film growth process is along with InxGa1-xThe thickness of the As film increases; and/or, for different layers of InyAl1-yAs film, arbitrary monolayer of InyAl1-yThe linear increasing rate of the flow of the second path of etching gas source adopted In the As film growth process is along with InyAl1-yThe thickness of the As film increases.
Optionally, for any monolayer of InyAl1-yAs film on which In is formedyAl1-yThe flow of the second path of etching gas source adopted at the starting moment of the As film is InyAl1-yThe As film adopts 50-60% of the average flow of the second path of etching gas source to form InyAl1-yThe flow of the second path of etching gas source adopted at the termination moment of the As film is InyAl1-yThe flow average flow of the As film adopting the second path of etching gas source is 150-180%.
Optionally, for any monolayer of InxGa1-xAs film on which In is formedxGa1-xThe flow of the first path of etching gas source adopted at the initial moment of the As film is InxGa1-xThe As film adopts 50-60% of the flow average flow of the first path of etching gas source to form InxGa1-xThe flow of the first path of etching gas source adopted at the termination moment of the As film is InxGa1-xThe flow average flow of the As film adopting the first path of etching gas source is 150-180%.
Optionally, In is formed In any single layerxGa1-xAfter As film, a first path of etching gas source is used for InxGa1-xThe As film is etched, and the first path of etching gas source has high etching rate to In atomsThe etching rate for Ga atoms; and/or, In forming an arbitrary monolayeryAl1-yAfter As film, using the second path of etching gas source to InyAl1-yAnd etching the As film, wherein the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
Optionally, for different layers of InxGa1-xAs film, the average flow of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yAs film, the average flow of the second path of etching gas source is along with InyAl1-yThe thickness of the As film increases.
Optionally, for different layers of InxGa1-xAs film, the etching time of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yThe etching time of the second path of etching gas source is In accordance with the As filmyAl1-yThe thickness of the As film increases.
Optionally, a first etching gas source is used to etch any single layer of InxGa1-xIn the process of etching the As film, the flow of a first path of etching gas source is constant; and/or, adopting a second path of etching gas source to generate any single layer of InyAl1-yAnd in the process of etching the As film, the flow of the second path of etching gas source is constant.
The invention also provides a manufacturing method of the semiconductor light-emitting structure, which comprises the manufacturing method of the superlattice active layer.
The invention has the beneficial effects that:
the invention provides a method for manufacturing a superlattice active layer, which is used for forming any single layer of InxGa1-xAnd a first path of gallium source gas and a second path of gallium source gas are adopted in the As film process, and the flow rate of the second path of gallium source gas is far smaller than that of the first path of gallium source gas. Due to the fact that the In is applied to multiple layers with different thicknessesxGa1-xAn As film, the average flow of the second path of gallium source gas follows InxGa1-xThe thickness of the As film is increased, so that the second path of gallium source gas can compensate InxGa1-xThickness of As film itself vs. InxGa1-xInfluence of average composition of Ga In As film, so that multiple layers of In of different thicknessesxGa1-xThe uniformity of the average composition of Ga in As films is improved. Secondly, the maximum range of the flowmeter for controlling the flow of the second path of gallium source gas is smaller than the maximum range of the flowmeter for controlling the flow of the first path of gallium source gas, so that the flowmeter for controlling the flow of the second path of gallium source gas and the flowmeter for controlling the flow of the first path of gallium source gas can perform flow control In respective optimal ranges, thereby improving the control precision and enabling the second path of gallium source gas to more accurately compensate InxGa1-xThickness of As film itself vs. InxGa1-xThe influence of the average composition of Ga In As film further improves the multilayer In with different thicknessxGa1-xUniformity of the average composition of Ga in As films. In forming an arbitrary single layeryAl1-yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, and the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas. Due to the fact that the In is applied to multiple layers with different thicknessesyAl1-yAs film, the average flow of the second aluminum source gas is InyAl1-yThe thickness of As film increases, so that the second path of aluminum source gas can compensate InyAl1-yThickness of As film itself to InyAl1-yInfluence of average composition of Al In As film, so that multiple layers of In of different thicknessesyAl1-yThe uniformity of the average composition of Al in the As film is improved. Secondly, the maximum range of the flowmeter for controlling the flow of the second path of aluminum source gas is smaller than the maximum range of the flowmeter for controlling the flow of the first path of aluminum source gas, so that the flowmeter for controlling the flow of the second path of aluminum source gas and the flowmeter for controlling the flow of the first path of aluminum source gas can control the flow In respective optimal ranges, thereby improving the control accuracy and enabling the second path of aluminum source gas to compensate In more accuratelyyAl1-yThickness of As film itself to InyAl1-yThe influence of the average composition of Al In As further improves the multilayer In with different thicknessesyAl1-yUniformity of the average composition of Al in As films. In conclusion, the uniformity of average compositions among different layers in the growth process of the superlattice active layer is effectively improved.
Detailed Description
The superlattice active layer growth of the semiconductor light emitting structure may be performed using MOCVD. When the superlattice active layer is InxGa1-xAs/InyAl1-yAs, in the conventional growth process, three organometallic sources, trimethyl indium, trimethyl gallium and trimethyl aluminum, respectively, and one As source gas, such As arsine, are used. During the growth process, trimethyl indium and As source gases are kept introduced, trimethyl gallium and trimethyl aluminum are alternately switched, and the switching time is controlled, so that the superlattice structures of active layers with different thicknesses can be grown.
However, this conventional growth method has a great problem in that the composition of the thin layer cannot be precisely controlled. In under the precondition that the flow rates of trimethyl gallium and trimethyl indium are kept unchangedxGa1-xThe gallium component of As material will follow InxGa1-xIncreasing the As thickness and gradually decreasing until InxGa1-xIn after As thickness is greater than 300 angstromsxGa1-xThe gallium content of the As material will remain substantially unchanged; inyAl1-yAs materials also have similar properties. The variation of the composition of the thin layer with thickness is mainly due to interfacial effects.
Thus, In is grown In a conventional mannerxGa1-xAs/InyAl1-yIn case of As superlattice active layerxGa1-xThe material composition of As causes the following problems: average composition non-uniformity from thin layer to thin layer, each InxGa1-xThe average composition of the As thin layers is related to the thickness of the As thin layers, the thin layers with large thickness have low average gallium composition, and the thin layers with small thickness have high average Ga composition; composition within the thin layer is not uniform, InxGa1-xGallium contained in the As thin layer along the epitaxial growth directionThe amount gradually decreases. InyAl1-ySimilar problems arise with the material composition of the As thin layer.
The invention provides a method for manufacturing a superlattice active layer aiming at the problem of uneven average composition between thin layers.
Further, a proposal is provided for the problem of uneven composition inside the thin layer.
The technical solutions of the present invention will be described clearly and completely below, and it should be apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The noun explains:
the maximum measurement range in this embodiment refers to: the upper limit value of the measurement range of the flowmeter is, for example, when the measurement range of the flowmeter is 0 sccm-0.3 sccm, the maximum measurement range of the flowmeter is 0.3 sccm; when the measurement range of the flowmeter is 0 sccm-40 sccm, the maximum measurement range of the flowmeter is 40 sccm.
Example 1
The embodiment provides a method for manufacturing a superlattice active layer, which comprises the following steps: forming a plurality of sub-active layer units which are periodically arranged, wherein the step of forming the sub-active layer units comprises the following steps: forming several layers of InxGa1-xAn As film; forming several layers of InyAl1-yAn As film; in sub-active layer unitxGa1-xAs film and InyAl1-yAs films are alternately arranged at intervals, and at least part of In the sub-active layer unitxGa1-xAs film thickness is different, at least part of In sub-active layer unityAl1-yThe thickness of the As film is different; in forming an arbitrary single layerxGa1-xThe process of the As film adopts a first path of gallium source gas and a second path of gallium source gas, and the flow rate of the second path of gallium source gas is far less than that of the first path of gallium source gasThe flow rate, the maximum range of the flowmeter for controlling the flow rate of the second path of gallium source gas is smaller than the maximum range of the flowmeter for controlling the flow rate of the first path of gallium source gas; for multiple layers of In of different thicknessesxGa1-xThe average flow of the second path of gallium source gas follows InxGa1-xThe increase in thickness of the As film; and, forming an arbitrary monolayer of InyAl1-yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of aluminum source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of aluminum source gas; for multiple layers of In of different thicknessesyAl1- yAs film, the average flow of the second aluminum source gas is InyAl1-yThe thickness of the As film increases.
In this embodiment, the second path of gallium source gas can compensate InxGa1-xThickness of As film itself vs. InxGa1-xInfluence of average composition of Ga In As film, so that multiple layers of In of different thicknessesxGa1-xThe uniformity of the average composition of Ga in As films is improved. The second channel of aluminum source gas can compensate InyAl1-yThickness of As film itself vs. InyAl1-yInfluence of average composition of Al In As film, so that multiple layers of In of different thicknessesyAl1-yThe uniformity of the average composition of Al in the As film is improved.
In this embodiment, the flow rate of the second path of gallium source gas is much smaller than that of the first path of gallium source gas, and the maximum range of the flowmeter that controls the flow rate of the second path of gallium source gas is smaller than that of the flowmeter that controls the flow rate of the first path of gallium source gas. Passing through a second path of gallium source gas pair In with small flowxGa1-xThe gallium component In the As film is subjected to component compensation, so that the flow rate of the flowmeter for controlling the flow rate of the second path of gallium source gas and the flow rate of the flowmeter for controlling the flow rate of the first path of gallium source gas can be controlled within respective optimal ranges, and the In film can be subjected to component compensation, so that the In film can be subjected to component compensationxGa1-xPrecise control of gallium composition in As films, secondIn can be compensated more accurately by gallium source gasxGa1-xThickness of As film itself vs. InxGa1-xInfluence of average composition of Ga In As film further improves multilayer In with different thicknessxGa1-xUniformity of the average composition of Ga in As films.
In this embodiment, the flow rate of the second channel of aluminum source gas is much smaller than that of the first channel of aluminum source gas, and the maximum range of the flow meter for controlling the flow rate of the second channel of aluminum source gas is smaller than that of the flow meter for controlling the flow rate of the first channel of aluminum source gas. Passing through a second path of aluminum source gas with small flow rate to InyAl1-yThe aluminum component In the As film is subjected to component compensation, so that the flow rate of the flowmeter for controlling the flow rate of the second path of aluminum source gas and the flow rate of the flowmeter for controlling the flow rate of the first path of aluminum source gas can be controlled In respective optimal ranges, and the In film can be subjected to component compensationyAl1-yThe aluminum component In the As film is accurately controlled, and the second path of aluminum source gas can more accurately compensate InyAl1-yThickness of As film itself vs. InyAl1-yThe influence of the average composition of Al In As further improves the multilayer In with different thicknessesyAl1-yUniformity of the average composition of Al in As films.
In other embodiments, any single layer of In is formedxGa1-xA first path of gallium source gas and a second path of gallium source gas are adopted in the As film process, the flow rate of the second path of gallium source gas is far smaller than that of the first path of gallium source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of gallium source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of gallium source gas; for multiple layers of In of different thicknessesxGa1-xThe average flow of the second path of gallium source gas follows InxGa1-xThe increase in the thickness of the As film increases. Or, In is formed In an arbitrary single layeryAl1-yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of aluminum source gas is smaller than that of the first path of aluminum source gasThe maximum range of the flowmeter of (1); for multiple layers of In of different thicknessesyAl1-yAs film, the average flow of the second aluminum source gas is InyAl1-yThe thickness of the As film increases.
In one embodiment, the flow rate of the second path of gallium source gas is 0.05sccm to 0.1 sccm. The flow rate of the first path of gallium source gas is 5 sccm-10 sccm. The maximum measuring range of the flowmeter for controlling the flow of the second path of gallium source gas is 0.2 sccm-0.4 sccm. The maximum measuring range of the flowmeter for controlling the flow of the first path of gallium source gas is 30 sccm-40 sccm. The second path of gallium source gas can also adopt a double-dilution pipeline design, so that the requirement on the measuring range of a single flowmeter is reduced.
In this embodiment, the gas used by the first path of gallium source gas is the same as the gas used by the second path of gallium source gas, for example, both the gas used by the first path of gallium source gas and the gas used by the second path of gallium source gas are trimethyl gallium. In other embodiments, the gas used for the first path of gallium source gas and the gas used for the second path of gallium source gas may be different.
In forming an arbitrary single layerxGa1-xIn the process of the As film, indium source gas and arsenic source gas are also introduced. The indium source gas includes trimethyl indium. The arsenic source gas comprises arsine.
In forming an arbitrary monolayeryAl1-yIn the process of the As film, indium source gas and arsenic source gas are also introduced. The indium source gas includes trimethyl indium. The arsenic source gas comprises arsine.
In forming an arbitrary single layerxGa1-xArsenic source gas used In As process and In forming any monolayeryAl1-yThe arsenic source gas used in the As membrane process may share the same conduit. The arsenic source gas need not be InxGa1-xAs film and InyAl1-yThe As film is switched in the growth switching process, the arsenic source gas is continuously introduced into the chamber, and the arsenic source gas does not need to be switched. In forming an arbitrary single layerxGa1-xIndium source gas used In As process and In forming arbitrary single layeryAl1-yArsenic source gas used in As film processThe bodies may share the same conduit. InxGa1-xAs film and InyAl1-yIn the process of growth switching of the As film, the indium source gas is continuously introduced into the chamber, and the indium source gas does not need to be switched.
In this embodiment, an arbitrary single layer of In is formedxGa1-xIn the process of the As film, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is constant; for multiple layers of In of different thicknessesxGa1-xAs film, the flow of the second path of gallium source gas follows InxGa1-xThe increase in thickness of the As film; for different layers of InxGa1-xAnd the As film adopts the same flow of the first path of gallium source gas.
In this embodiment, an arbitrary single layer of In is formedyAl1-yIn the As film process, the flow of the first path of aluminum source gas is constant, and the flow of the second path of aluminum source gas is constant; for multiple layers of In of different thicknessesyAl1-yAs film, the flow rate of the second path of aluminum source gas follows InyAl1-yThe increase in thickness of the As film; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
In other embodiments, any single layer of In is formedxGa1-xIn the process of the As film, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is constant; for different layers of InxGa1-xAnd the As film adopts the same flow of the first path of gallium source gas. Or, In is formed In an arbitrary single layeryAl1-yIn the As film process, the flow of the first path of aluminum source gas is constant, and the flow of the second path of aluminum source gas is constant; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
Example 2
The present embodiment provides a method for fabricating a superlattice active layer, and the difference between the present embodiment and embodiment 1 is: in forming an arbitrary single layerxGa1-xAs filmIn the process, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is linearly increased; in for different layersxGa1-xThe As film adopts the same flow of the first path of gallium source gas; and/or, In forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the adopted first path of aluminum source gas is constant, and the flow of the adopted second path of aluminum source gas is increased linearly; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
In this example, an arbitrary single layer of InxGa1-xIn the process of As film growth, the flow of the second path of gallium source gas is set with a flow gradient, namely the flow of the second path of gallium source gas is low at the beginning and the flow of the second path of gallium source gas is high at the end, which is beneficial to compensating any single layer of InxGa1-xUniformity of gallium composition within the As film. Arbitrary single layer of InyAl1-yIn the process of As film growth, the flow of the second path of aluminum source gas is provided with a flow gradient, namely the flow of the second path of aluminum source gas is low at the beginning and the flow of the second path of aluminum source gas is high at the end, which is beneficial to compensating any monolayer of InyAl1-yUniformity of aluminum composition inside the As film.
In one embodiment, In for different layersxGa1-xAs film, arbitrary monolayer of InxGa1-xThe increment rate of the flow of the second path of gallium source gas adopted In the As film growth process is along with InxGa1-xAs film thickness is increased, effectively offsetting InxGa1-xThe effect of increasing As film thickness and decreasing Ga component content; and/or, for different layers of InyAl1-yAs film, arbitrary monolayer of InyAl1-yThe increment rate of the flow of the second path of aluminum source gas adopted In the As film growth process is along with InyAl1-yAs film thickness is increased, effectively offsetting InyAl1-yThe effect of increasing the As film thickness and decreasing the Al component content.
In one embodiment, In is formed In an arbitrary monolayerxGa1-xOver of As filmIn the process, the flow of the adopted first path of gallium source gas is constant, the flow of the adopted second path of gallium source gas is linearly increased, at the beginning, the flow of the second path of gallium source gas is 20% -30% of the average flow, and at the end, the flow of the second path of gallium source gas is 180% -200% of the average flow; in forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the first path of aluminum source gas is constant, the flow of the second path of aluminum source gas is linearly increased, at the beginning, the flow of the second path of aluminum source gas is 20% -30% of the average flow, and at the end, the flow of the second path of aluminum source gas is 180% -200% of the average flow.
The same contents of this embodiment as those of embodiment 1 will not be described in detail.
Example 3
This example provides a method for forming a superlattice active layer, which is based on example 1 or example 2 and forms an arbitrary single layer of InxGa1-xIn the process of the As film, a first path of etching gas source is introduced, and the etching rate of the first path of etching gas source to In atoms is higher than that to Ga atoms; and, forming an arbitrary monolayer of InyAl1-yAnd In the process of the As film, a second path of etching gas source is introduced, and the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
In other embodiments, on the basis of embodiment 1 or embodiment 2, In of an arbitrary single layer is formedxGa1-xIn the process of the As film, a first path of etching gas source is introduced, and the etching rate of the first path of etching gas source to In atoms is higher than that to Ga atoms; or, In is formed In an arbitrary single layeryAl1-yAnd In the process of the As film, a second path of etching gas source is introduced, and the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
The first path of etching gas source is CBr4The second etching gas source is CBr4。
In forming an arbitrary single layerxGa1-xIn the process of As film, when only the second path of gallium source gas is introduced, although InxGa1-xGa component in As film is obtainedCompensate, but correspondingly sum InxGa1-xThe As film growth rate also becomes faster, mainly because of InxGa1-xThe growth rate of the As film is in direct proportion to the total molar flow of trimethyl indium and trimethyl gallium; when the first path of etching gas source is simultaneously introduced, the first path of etching gas source is correspondingly due to CBr4Selective etching effect on In atoms, total InxGa1-xThe growth rate of As film is reduced; thus, In can be maintained as much as possible on the premise of ensuring the compensation of effective componentsxGa1-xThe growth rate of As film is not changed, thereby effectively increasing InxGa1-xThe control precision of the As film thickness; in the same way, In is formed In any single layeryAl1-yIn the As film process, when only the second path of aluminum source gas is introduced, although InyAl1-yThe Al component In As film is compensated, but the In is totally included correspondinglyyAl1-yThe As film growth rate also becomes faster, mainly because of InyAl1-yThe growth rate of the As film is in direct proportion to the total molar flow of the trimethyl indium and the trimethyl aluminum; when the second path of etching gas source is simultaneously introduced, the corresponding effect is due to CBr4Selective etching effect on In atoms, total InyAl1-yThe growth rate of the As film is reduced; thus, In can be maintained as much as possible on the premise of ensuring the compensation of effective componentsyAl1-yAs film growth rate is not changed, thereby effectively increasing InyAl1-yControl accuracy of As film thickness.
In forming an arbitrary single layerxGa1-xIn the process of the As film, the flow of the first path of etching gas source is constant; and/or, In forming an arbitrary monolayeryAl1-yAnd in the process of the As film, the flow of the second path of etching gas source is constant.
Example 4
The present embodiment provides a method for fabricating a superlattice active layer, and the difference between the present embodiment and embodiment 3 is: in forming an arbitrary single layerxGa1-xIn the process of the As film, the flow of a first path of etching gas source is linearly increased; and/or In forming an arbitrary monolayeryAl1-yIn the process of As film, the second etching pathThe flow of the air source increases linearly.
In one embodiment, an arbitrary monolayer of In is formedxGa1-xIn the process of the As film, the flow of the first path of etching gas source is increased linearly, the flow of the first path of etching gas source is 50% -60% of the average flow at the beginning, and the flow of the first path of etching gas source is 150% -180% of the average flow at the end; in forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the second path of etching gas source is increased linearly, at the beginning, the flow of the second path of etching gas source is 50% -60% of the average flow, and at the end, the flow of the second path of etching gas source is 150% -180% of the average flow.
For different layers of InxGa1-xAs film, arbitrary monolayer of InxGa1-xThe linear increasing rate of the flow of the first path of etching gas source adopted In the growth process of the As film is along with InxGa1-xThe thickness of the As film increases; and/or, for different layers of InyAl1- yAs film, arbitrary monolayer of InyAl1-yThe linear increasing rate of the flow of the second path of etching gas source adopted In the As film growth process is along with InyAl1-yThe thickness of the As film increases.
In this embodiment, an arbitrary single layer of In is formedxGa1-xIn the process of the As film, a first path of etching gas source CBr is utilized4For InxGa1-xThe selective corrosion action of As film to indium atom is higher than that of gallium atom, InxGa1-xThe indium component of As is selectively etched to increase InxGa1-xGallium component in As film; etching gas source CBr by using first path4In is offset by the etching capability ofxGa1-xThe effect of the gallium component is smaller As the As film thickness is thicker, thereby increasing InxGa1-xUniformity of the gallium composition inside the As film; in forming an arbitrary single layeryAl1-yIn the process of As film, a second path of etching gas source CBr is utilized4For InyAl1-yThe selective etching action of As film is higher for indium atom than for aluminum atom, InyAl1-yOf AsThe indium component is selectively etched to increase InyAl1-yAluminum component in As film; etching gas source CBr by using the second path4In is offset by the etching capability ofyAl1-yThe effect of the aluminum component is smaller As the As film thickness is thicker, thereby increasing InyAl1-yUniformity of aluminum composition inside the As film.
Example 5
The present embodiment provides a method for manufacturing a superlattice active layer, and the difference between the present embodiment and embodiments 3 and 4 is that: in forming an arbitrary single layerxGa1-xAfter As film, a first path of etching gas source is used for InxGa1-xEtching the As film, wherein the etching rate of the first path of etching gas source to the In atoms is higher than that to the Ga atoms; and/or, In forming an arbitrary monolayeryAl1-yAfter As film, using the second path of etching gas source to supply InyAl1-yAnd etching the As film, wherein the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
In one embodiment, In for different layersxGa1-xAs film, the average flow of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yAs film, the average flow of the second path of etching gas source is along with InyAl1-yThe thickness of the As film increases.
In one embodiment, In for different layersxGa1-xAs film, the etching time of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yThe etching time of the second path of etching gas source is In accordance with the As filmyAl1-yThe thickness of the As film increases.
In one embodiment, a first etching gas source is used to etch any single layer of InxGa1-xIn the process of etching the As film, the flow of a first path of etching gas source is constant; and/or, using the second path of etching gas source to generate any single layer of InyAl1-yAnd in the process of etching the As film, the flow of the second path of etching gas source is constant.
In this embodiment, an arbitrary single layer of In is formedxGa1-xAfter As film, a first path of etching gas source is used for InxGa1- xAs film is etched to increase InxGa1-xGallium component and In As filmxGa1-xThe uniformity of the gallium component In the As film is reduced, and the carbon atoms In the first path of etching gas source are reduced to enter InxGa1-xProbability in As film; in forming an arbitrary single layeryAl1-yAfter As film, using the second path of etching gas source to InyAl1-yAs film is etched to increase InyAl1-yAluminum component and In As filmyAl1-yThe uniformity of the aluminum component In the As film reduces the carbon atoms In the second path of etching gas source to enter InxGa1-xProbability in As film.
Example 6
The present embodiment provides a method for fabricating a semiconductor light emitting structure, including the method for fabricating a superlattice active layer as in any one of embodiments 1 to 5.
In this embodiment, the method for manufacturing the semiconductor light emitting structure further includes: providing a semiconductor substrate layer; forming a lower confinement layer on the semiconductor substrate layer; forming a lower waveguide layer on the lower confinement layer; forming a superlattice active layer on the lower waveguide layer; forming an upper waveguide layer on the superlattice active layer; an upper confinement layer is formed on the upper waveguide layer. The semiconductor light emitting structure is an edge emitting semiconductor laser.
In other embodiments, the semiconductor light emitting structure can also be a vertical cavity surface semiconductor laser device.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (18)

1. A method for fabricating a superlattice active layer includes:
forming a plurality of sub-active layer units which are periodically arranged, wherein the step of forming the sub-active layer units comprises the following steps: forming several layers of InxGa1-xAn As film; forming several layers of InyAl1-yAn As film; in sub-active layer unitxGa1-xAs film and InyAl1-yAs films are alternately arranged at intervals, and at least part of In the sub-active layer unitxGa1-xAs film thickness is different, at least part of In sub-active layer unityAl1-yThe thickness of the As film is different;
in forming an arbitrary single layerxGa1-xA first path of gallium source gas and a second path of gallium source gas are adopted in the As film process, the flow rate of the second path of gallium source gas is far smaller than that of the first path of gallium source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of gallium source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of gallium source gas; for multiple layers of In of different thicknessesxGa1-xThe average flow of the second path of gallium source gas is along with InxGa1-xThe increase in thickness of the As film;
and/or, In forming an arbitrary monolayeryAl1-yA first path of aluminum source gas and a second path of aluminum source gas are adopted in the As film process, the flow rate of the second path of aluminum source gas is far smaller than that of the first path of aluminum source gas, and the maximum range of a flowmeter for controlling the flow rate of the second path of aluminum source gas is smaller than that of the flowmeter for controlling the flow rate of the first path of aluminum source gas; for multiple layers of In of different thicknessesyAl1-yAs film, the average flow of the second path of aluminum source gas follows InyAl1-yThe increase in the thickness of the As film increases.
2. The method of claim 1, wherein any monolayer of In is formedxGa1-xIn the process of the As film, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is constant; in for different layersxGa1-xThe As film adopts the same flow of the first path of gallium source gas;
and/or, In forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the first path of aluminum source gas is constant, and the flow of the second path of aluminum source gas is constant; in for different layersyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
3. The method of claim 1, wherein any monolayer of In is formedxGa1-xIn the As film process, the flow of the adopted first path of gallium source gas is constant, and the flow of the adopted second path of gallium source gas is linearly increased; for different layers of InxGa1-xThe As film adopts the same flow of the first path of gallium source gas;
and/or, In forming an arbitrary monolayeryAl1-yIn the As film process, the flow of the adopted first path of aluminum source gas is constant, and the flow of the adopted second path of aluminum source gas is increased linearly; for different layers of InyAl1-yAs membranes, the flow rates of the first path of aluminum source gas adopted by the As membranes are the same.
4. The method of claim 3, wherein In is for different layersxGa1- xAs film, arbitrary monolayer of InxGa1-xThe increment rate of the flow of the second path of gallium source gas adopted In the As film growth process is along with InxGa1-xThe thickness of the As film increases;
and/or, for different layers of InyAl1-yAs film, arbitrary monolayer of InyAl1-yThe increment rate of the flow of the second path of aluminum source gas adopted In the As film growth process is along with InyAl1-yThe thickness of the As film increases.
5. A method of fabricating a superlattice active layer as claimed In claim 3 or 4, wherein said superlattice active layer is formed for any single layer of InxGa1-xAs film on which In is formedxGa1-xThe flow of the second path of gallium source gas adopted at the starting moment of the As film is InxGa1- xThe As film adopts 20-30% of the flow average flow of the second path of gallium source gas to form InxGa1-xThe flow rate of the second path of gallium source gas adopted at the termination time of the As film is InxGa1-xThe flow average flow of the second path of gallium source gas adopted by the As film is 180% -200%.
6. A method of fabricating a superlattice active layer as claimed In claim 3 or 4, wherein said superlattice active layer is formed for any single layer of InyAl1-yAs film on which In is formedyAl1-yThe flow rate of the second aluminum source gas adopted at the starting time of the As film is InyAl1- yThe As film is formed by adopting 20-30% of the flow average flow of the second aluminum source gasyAl1-yThe flow rate of the second aluminum source gas used at the termination time of the As film is InyAl1-yThe flow average flow of the second aluminum source gas adopted by the As membrane is 180-200%.
7. The method of claim 1, wherein any monolayer of In is formedxGa1-xIn the process of the As film, a first path of etching gas source is introduced, and the etching rate of the first path of etching gas source to In atoms is higher than that to Ga atoms; and/or, In forming an arbitrary monolayeryAl1-yAnd In the process of the As film, a second path of etching gas source is introduced, and the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
8. The method of fabricating the superlattice active layer as claimed in claim 7, wherein said at least one of the first and second metal layers is different from each otherIn of the layerxGa1- xAs film, the average flow of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yAs film, the average flow of the second path of etching gas source is along with InyAl1-yThe thickness of the As film increases.
9. The method of forming a superlattice active layer as claimed In claim 7 or 8, wherein any monolayer of In is formedxGa1-xIn the process of the As film, the flow of the first path of etching gas source is constant; and/or In forming an arbitrary monolayeryAl1-yAnd in the process of the As film, the flow of the second path of etching gas source is constant.
10. The method of forming a superlattice active layer as claimed In claim 7 or 8, wherein any monolayer of In is formedxGa1-xIn the process of the As film, the flow of a first path of etching gas source is linearly increased; and/or, In forming an arbitrary monolayeryAl1-yIn the process of the As film, the flow of the second path of etching gas source is increased linearly.
11. The method of claim 10, wherein In is for different layersxGa1-xAs film, arbitrary monolayer of InxGa1-xThe linear increasing rate of the flow of the first path of etching gas source adopted In the As film growth process is along with InxGa1-xThe thickness of the As film increases; and/or, for different layers of InyAl1-yAs film, arbitrary monolayer of InyAl1-yThe linear increasing rate of the flow of the second path of etching gas source adopted In the As film growth process is along with InyAl1-yThe thickness of the As film increases.
12. The method of fabricating the superlattice active layer as claimed In claim 10, wherein for any monolayer of InyAl1-yAs film on which In is formedyAl1-yThe flow of the second path of etching gas source adopted at the starting moment of the As film is InyAl1- yThe As film adopts 50-60% of the average flow of the second path of etching gas source to form InyAl1-yThe flow of the second path of etching gas source adopted at the termination moment of the As film is InyAl1-yThe flow average flow of the As film adopting the second path of etching gas source is 150-180%.
13. The method of fabricating the superlattice active layer as claimed In claim 10, wherein for any monolayer of InxGa1-xAs film on which In is formedxGa1-xThe flow of the first path of etching gas source adopted at the initial moment of the As film is InxGa1- xThe As film adopts 50-60% of the average flow of the first path of etching gas source to form InxGa1-xThe flow of the first path of etching gas source adopted at the termination moment of the As film is InxGa1-xThe flow average flow of the As film adopting the first path of etching gas source is 150-180%.
14. The method of claim 1, wherein any monolayer of In is formedxGa1-xAfter As film, a first path of etching gas source is used for InxGa1-xEtching the As film, wherein the etching rate of the first path of etching gas source to the In atoms is higher than that to the Ga atoms; and/or In forming an arbitrary monolayeryAl1-yAfter As film, using the second path of etching gas source to InyAl1-yAnd etching the As film, wherein the etching rate of the second path of etching gas source to the In atoms is higher than that to the Al atoms.
15. The method of claim 14, wherein In is for different layersxGa1-xAs film, the average flow of the first path etching gas source is InxGa1-xThickness of As filmIncrease in degree; and/or, for different layers of InyAl1-yAs film, the average flow of the second path etching gas source is InyAl1-yThe thickness of the As film increases.
16. The method of claim 14, wherein In is for different layersxGa1-xAs film, the etching time of the first path of etching gas source is along with InxGa1-xThe increase in thickness of the As film; and/or, for different layers of InyAl1-yThe etching time of the second path of etching gas source is In accordance with the As filmyAl1-yThe thickness of the As film increases.
17. A method of forming a superlattice active layer as claimed In claim 14, 15 or 16, wherein the first etching source is adapted to etch any single layer of InxGa1-xIn the process of etching the As film, the flow of a first path of etching gas source is constant; and/or, adopting a second path of etching gas source to generate any single layer of InyAl1-yAnd in the process of etching the As film, the flow of the second path of etching gas source is constant.
18. A method of fabricating a semiconductor light emitting structure comprising the method of fabricating a superlattice active layer as claimed in any one of claims 1 to 17.
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