CN111490456A - InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure - Google Patents
InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure Download PDFInfo
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Abstract
The invention discloses an InGaAs/AlGaAs single quantum well and multi-quantum well semiconductor laser active region epitaxial structure which sequentially comprises a GaAs cover layer, an AlGaAs upper barrier layer, a GaAs upper insertion layer, an InGaAs potential well layer, a GaAs lower insertion layer, an AlGaAs lower barrier layer, a GaAs buffer layer and an N-type substrate with a GaAs (100) crystal orientation biased (110) by 2 degrees from top to bottom. The invention solves the problem of small forbidden bandwidth of GaAs in InGaAs/GaAs in an active region material system of a semiconductor laser with the wavelength of 900-950 nm.
Description
Technical Field
The invention belongs to the field of semiconductor materials, and particularly relates to an InGaAs/AlGaAs single quantum well and multi-quantum well epitaxial structure of an active region of a semiconductor laser, which grows at 900-950 nm.
Background
The semiconductor laser has the advantages of wide wavelength range, simple manufacture, low cost, easy mass production, long service life and the like. Due to its advantages of high efficiency, high reliability and miniaturization, semiconductor diode lasers have found wide applications in optical communications, optical storage, optical interconnects, laser printing, and lidar ranging. For the wavelength of 900-950nm, the GaAs barrier in the InGaAs/GaAs multiple quantum well structure adopted by the active region of the traditional semiconductor laser is low, and the carriers cannot be well limited in the quantum well.
Disclosure of Invention
In order to solve the problem of small forbidden bandwidth of GaAs in InGaAs/GaAs in an active region material system of a semiconductor laser with the wavelength of 900-950nm, the invention provides a novel epitaxial structure design and growth technology of using an InGaAs/AlGaAs single quantum well and a multi-quantum well structure as the active region material of the semiconductor laser, which realizes the growth of the active region material with the target wavelength in a simple and effective mode, can increase the barrier height, reduce the surface roughness and have higher crystal quality.
The technical scheme adopted by the invention is as follows:
an InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure is characterized in that:
when the InGaAs/AlGaAs multi-quantum well structure is used as an active region, the InGaAs/AlGaAs multi-quantum well structure comprises a potential well InGaAs layer, a potential barrier AlGaAs layer and an insertion layer GaAs layer.
Another InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure is characterized in that:
when the InGaAs/AlGaAs multi-quantum well structure is used as a single-unique-source-region epitaxial structure, the InGaAs/AlGaAs multi-quantum well structure sequentially comprises a GaAs cover layer, an AlGaAs upper barrier layer, a GaAs upper insertion layer, an InGaAs well layer, a GaAs lower insertion layer, an AlGaAs lower barrier layer, a GaAs buffer layer and an N-type substrate with a GaAs (100) crystal orientation biased by (110)2 degrees from top to bottom.
Preferably, the Al components in the AlGaAs upper barrier layer and the AlGaAs lower barrier layer are both x, and when x is more than or equal to 0.1 and less than or equal to 0.3, the thicknesses of the AlGaAs upper barrier layer and the AlGaAs lower barrier layer are 8-10 nm.
Preferably, the In composition of the potential well InGaAs layer is y, and when y is more than or equal to 0.15 and less than or equal to 0.18, the thickness of the potential well InGaAs layer is 6-8 nm.
Preferably, the thickness of the GaAs upper insertion layer and the GaAs lower insertion layer is 4-7 nm.
Preferably, the number of quantum wells of the active region in a multiple quantum well structure is 1 to 5.
Preferably, the potential well InGaAs layer is grown at a low temperature, about 560-.
Preferably, the AlGaAs upper barrier layer and the AlGaAs lower barrier layer are grown at high temperature, about 680-720 ℃.
Preferably, the GaAs upper insertion layer is grown at a high temperature of about 660-; the GaAs lower insertion layer is grown at low temperature, about 580-600 ℃.
Compared with the prior art, the method has the advantages that,
1) aiming at an epitaxial structure of a semiconductor laser, a source region structure is designed, an InGaAs/AlGaAs multi-quantum well is selected as the active region structure, and the thickness of a potential well InGaAs layer, the thickness of a potential barrier AlGaAs layer, the thickness of an insert layer GaAs layer and the growth temperature of each layer are optimally designed; for the active region structure, GaAs insertion layers with different thicknesses need to be designed, so that photoluminescence intensity enhancement and minimum surface roughness light are realized, and the structural performance of the active region is improved.
2) The scheme adopts the metal organic compound epitaxial growth technology to epitaxially grow the InGaAs/AlGaAs multi-quantum well active region structure, increases the barrier height, reduces the surface roughness and has higher crystal quality;
3) the invention can be used for semiconductor lasers such as 915nm horizontal resonant cavity surface emitting lasers, 940nm vertical cavity surface emitting lasers, edge emitting lasers and the like; in the growth process of InGaAs/AlGaAs MQWs, according to the MOCVD growth theory, the growth of the InGaAs needs lower temperature (below about 600 ℃) to ensure that In atoms are not uneven due to fluctuation of In components caused by segregation phenomenon at high temperature; in addition, AlGaAs growth requires higher temperatures (below about 680 ℃ c) to ensure that the AlGaAs layer contains less carbon and oxygen impurities. In the growth process of MOCVD, AlGaAs and InGaAs layers alternately grow and grow at variable temperature repeatedly, so that In and Al atoms grow into InGaAs, and the performance of a device is influenced;
4) the invention improves the performance of the multiple quantum well by properly changing the thickness of the GaAs layer, the light-emitting intensity in the photoluminescence spectrum of the InGaAs/AlGaAs multiple quantum well is obviously enhanced and the FWHM in the spectrum is smaller when the thickness of the GaAs insertion layer is 4-7nm in the growth process, thereby proving that the performance of the InGaAs/AlGaAs can be improved by the GaAs layer with proper thickness.
Drawings
FIG. 1 is a diagram of the epitaxial growth structure of the active region of a semiconductor laser;
FIG. 2 is a photoluminescence spectrum of an InGaAs/AlGaAs multi-quantum well structure of an active region and an InGaAs/GaAs multi-quantum well structure of an epitaxial structure when the insertion layers are 0nm, 2nm, 4nm, 6nm, and 7nm, respectively;
FIG. 3 is an atomic force microscope surface topography of an InGaAs/AlGaAs multi-quantum well structure of an active region epitaxial structure when the insertion layer is 0 nm;
FIG. 4 is an atomic force microscope surface topography of an InGaAs/AlGaAs multi-quantum well structure of an active region epitaxial structure when the insertion layer is 4 nm;
FIG. 5 is an atomic force microscope surface topography of an InGaAs/AlGaAs multi-quantum well structure of an active region epitaxial structure when the insertion layer is 6 nm;
FIG. 6 is the surface topography of an atomic force microscope of an InGaAs/AlGaAs multi-quantum well structure of an active region epitaxial structure with an insertion layer of 7 nm.
Wherein: 1. a GaAs cap layer; 2. an AlGaAs upper barrier layer; 3. a GaAs upper interposer layer; 4. an InGaAs well layer; 5. a GaAs lower insertion layer; 6. an AlGaAs lower barrier layer; 7. a GaAs buffer layer; 8. GaAs (100) is an N-type substrate with 2 degrees of crystal orientation deviation (110).
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not mean that the device or member to which the present invention is directed must have a specific orientation or position, and thus, cannot be construed as limiting the present invention.
As shown in fig. 1, the present embodiment discloses a design and growth technique of InGaAs/AlGaAs multiple quantum well epitaxial structure of active region of semiconductor laser, which sequentially comprises, from top to bottom, a GaAs cap layer 1, an AlGaAs upper barrier layer 2, a GaAs upper insertion layer 3, an InGaAs well layer 4, a GaAs lower insertion layer 5, an AlGaAs lower barrier layer 6, a GaAs buffer layer 7, and an N-type substrate 8 with GaAs (100) being 2 ° off-oriented (110). The number and the component content of the active region, namely the multiple quantum wells, are changed, the thickness of the GaAs insertion layer is optimized, and the epitaxial growth crystal quality and the photoluminescence intensity are effectively improved.
Example one
In this embodiment, the active region structure of the semiconductor laser is obtained by epitaxy by using MOCVD, wherein the AlGaAs upper barrier layer 2 and the AlGaAs lower barrier layer 6 are both Al0.3GaAs, high-temperature growth at 680 ℃; the InGaAs well layer 4 is In0.18GaAs, growing at low temperature of 600 ℃; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are respectively 0nm, and the upper insertion layer and the lower insertion layer are grown at low temperature of 600 ℃ and high temperature of 680 ℃ respectively. In order to characterize the luminous efficiency and the crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer is tested by using a photoluminescence microscope and an atomic force microscope. As shown in FIG. 2, which is a photoluminescence spectrum, the emission intensity was almost 0 (relative intensity). As shown in fig. 3, which is a surface topography of an atomic force microscope, the growth modes are all distinct step flow growth modes, and the root mean square surface roughness is 0.683nm respectively.
Example two
In this embodiment, the active region of the semiconductor laser is MOCVD technique is obtained by epitaxy, wherein the AlGaAs upper barrier layer 2 and the AlGaAs lower barrier layer 6 are both Al0.3GaAs, high-temperature growth at 680 ℃; the InGaAs well layer 4 is In0.18GaAs, growing at low temperature of 600 ℃; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 4nm, and the upper insertion layer and the lower insertion layer are grown at low temperature of 600 ℃ and high temperature of 680 ℃ respectively. In order to characterize the luminous efficiency and the crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer is tested by using a photoluminescence microscope and an atomic force microscope. As shown in FIG. 2, the photoluminescence spectrum showed 7544 (relative intensity), a half-peak width of 16.5nm and a lasing wavelength of 937 nm. As shown in fig. 4, which is a surface topography of an atomic force microscope, the growth modes are all distinct step flow growth modes, and the root mean square surface roughness is 0.278nm respectively.
EXAMPLE III
In this embodiment, the active region structure of the semiconductor laser is obtained by epitaxy by using MOCVD, wherein the AlGaAs upper barrier layer 2 and the AlGaAs lower barrier layer 6 are both Al0.3GaAs, high-temperature growth at 680 ℃; the InGaAs well layer 4 is In0.18GaAs, growing at low temperature of 600 ℃; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 6nm, and the upper insertion layer and the lower insertion layer are grown at low temperature of 600 ℃ and high temperature of 680 ℃ respectively. In order to characterize the luminous efficiency and the crystal quality of the active region of the multi-quantum well structure, the epitaxial wafer is tested by using a photoluminescence microscope and an atomic force microscope. As shown in FIG. 2, the photoluminescence spectrum showed 13361 (relative intensity), 14.5nm full width at half maximum and 937nm lasing wavelength. As shown in fig. 5, which is a surface topography of an atomic force microscope, the growth modes are all distinct step flow growth modes, and the root mean square surface roughness is 0.640nm respectively.
Example four
In this embodiment, the active region structure of the semiconductor laser is obtained by epitaxy by using MOCVD, wherein the AlGaAs upper barrier layer 2 and the AlGaAs lower barrier layer 6 are both Al0.3GaAs, high-temperature growth at 680 ℃; the InGaAs well layer 4 is In0.18GaAs, growing at low temperature of 600 ℃; the GaAs upper insertion layer 3 and the GaAs lower insertion layer 5 are 7nm, and the upper insertion layer and the lower insertion layer are grown at low temperature of 600 ℃ and high temperature of 680 ℃ respectively. To characterize multiple quantum well structure activeThe luminous efficiency and the crystal quality of the area are tested by adopting a photoluminescence microscope and an atomic force microscope simultaneously on the epitaxial wafer. As shown in FIG. 2, the photoluminescence spectrum showed a luminescence intensity of 5545 (relative intensity), a half-width of 25nm, and a lasing wavelength of 946 nm. As shown in fig. 6, which is a surface topography of an afm, the growth modes are all distinct step flow growth modes, and the root mean square surface roughness is 0.472nm respectively.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. An InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure is characterized in that:
when the InGaAs/AlGaAs multi-quantum well structure is used as an active region, the InGaAs/AlGaAs multi-quantum well structure comprises an AlGaAs upper barrier layer (2), a GaAs upper insertion layer (3), an InGaAs well layer (4), a GaAs lower insertion layer (5) and an AlGaAs lower barrier layer (6).
2. An InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure is characterized in that:
when the InGaAs/AlGaAs multi-quantum well structure is used as a single-unique-source-region epitaxial structure, the InGaAs/AlGaAs multi-quantum well structure sequentially comprises a GaAs cover layer (1), an AlGaAs upper barrier layer (2), a GaAs upper insertion layer (3), an InGaAs well layer (4), a GaAs lower insertion layer (5), an AlGaAs lower barrier layer (6), a GaAs buffer layer (7) and an N-type substrate (8) of which the crystal orientation of GaAs (100) is deviated by (110)2 degrees from top to bottom.
3. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of claim 2, wherein:
the Al components in the AlGaAs upper barrier layer (2) and the AlGaAs lower barrier layer (6) are both x, and when x is more than or equal to 0.1 and less than or equal to 0.3, the thicknesses of the AlGaAs upper barrier layer (2) and the AlGaAs lower barrier layer (6) are 8-10 nm.
4. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of claim 2, wherein:
the In component In the potential well InGaAs layer (4) is y, and when y is more than or equal to 0.15 and less than or equal to 0.18, the thickness of the potential well InGaAs layer (4) is 6-8 nm.
5. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of any one of claims 2 to 4, wherein:
the thickness of the GaAs upper insertion layer (3) and the thickness of the GaAs lower insertion layer (5) are 4-7 nm.
6. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of any one of claims 2 to 4, wherein:
the number of quantum wells of the active region adopting a multi-quantum well structure is 1-5.
7. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of any one of claims 2 to 4, wherein:
the potential well InGaAs layer (4) is grown at low temperature of 560-.
8. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of any one of claims 2 to 4, wherein:
the AlGaAs upper barrier layer (2) and the AlGaAs lower barrier layer (6) are grown at high temperature, which is 680-720 ℃.
9. The InGaAs/AlGaAs single quantum well and multiple quantum well semiconductor laser active region epitaxial structure of any one of claims 2 to 4, wherein:
the GaAs upper insertion layer (3) grows at high temperature, namely 660-680 ℃; the GaAs lower insertion layer (5) is grown at a low temperature of 580-600 ℃.
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| CN114204419A (en) * | 2021-10-26 | 2022-03-18 | 长春理工大学 | Epitaxial structure of high-performance and high-quality InGaAs/InGaAsP multi-quantum well and growth method and application thereof |
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| CN114204419A (en) * | 2021-10-26 | 2022-03-18 | 长春理工大学 | Epitaxial structure of high-performance and high-quality InGaAs/InGaAsP multi-quantum well and growth method and application thereof |
| CN114204419B (en) * | 2021-10-26 | 2024-04-19 | 长春理工大学 | Epitaxial structure of high-performance high-quality InGaAs/InGaAsP multi-quantum well, and growth method and application thereof |
| CN114481088A (en) * | 2022-04-18 | 2022-05-13 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of superlattice active layer and semiconductor light-emitting structure |
| CN114481088B (en) * | 2022-04-18 | 2022-07-01 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of superlattice active layer and semiconductor light-emitting structure |
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