JPS6459964A - Hetero-junction fet - Google Patents
Hetero-junction fetInfo
- Publication number
- JPS6459964A JPS6459964A JP21750187A JP21750187A JPS6459964A JP S6459964 A JPS6459964 A JP S6459964A JP 21750187 A JP21750187 A JP 21750187A JP 21750187 A JP21750187 A JP 21750187A JP S6459964 A JPS6459964 A JP S6459964A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nondoped
- thickness
- gate
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the breakdown strength of a gate by a method wherein a nondoped channel layer, an electron supply layer and a nondoped barrier layer are successively built up on a compound semiconductor substrate and a gate electrode is built up on them to provide a gate-channel structure. CONSTITUTION:A nondoped GaAs channel layer 2 with a thickness of 1mum, an Si-doped electron supply layer 3 with a thickness of 200Angstrom , a nondoped barri er layer 3 with a thickness of 200Angstrom and an Si-doped n-type GaAs ohmic contact layer 5 with a thickness of 600Angstrom are built up on a GaAs substrate 1 by a molec ular beam epitaxy method. Composite metal films are applied by a vacuum evaporation method and then alloyed by heating at 450 deg.C for one minute to form a source electrode 7 and a drain electrode 8. The surface of the barrier layer 4 is exposed by selective etching and a gate electrode 6 is formed on it by vacuum evaporation. With this constitution, the activation rate of the electron supply layer is not degraded and, moreover, the breakdown strength of the gate can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21750187A JPS6459964A (en) | 1987-08-31 | 1987-08-31 | Hetero-junction fet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21750187A JPS6459964A (en) | 1987-08-31 | 1987-08-31 | Hetero-junction fet |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459964A true JPS6459964A (en) | 1989-03-07 |
Family
ID=16705224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21750187A Pending JPS6459964A (en) | 1987-08-31 | 1987-08-31 | Hetero-junction fet |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459964A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02240937A (en) * | 1989-03-14 | 1990-09-25 | Matsushita Electron Corp | Field-effect transistor |
JPH04175203A (en) * | 1990-11-08 | 1992-06-23 | Fuji Electric Co Ltd | Water-cooled type ozonizer |
-
1987
- 1987-08-31 JP JP21750187A patent/JPS6459964A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02240937A (en) * | 1989-03-14 | 1990-09-25 | Matsushita Electron Corp | Field-effect transistor |
JPH04175203A (en) * | 1990-11-08 | 1992-06-23 | Fuji Electric Co Ltd | Water-cooled type ozonizer |
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