JPS5617095A - Striped double-heterodyne junction semiconductor laser - Google Patents
Striped double-heterodyne junction semiconductor laserInfo
- Publication number
- JPS5617095A JPS5617095A JP2477479A JP2477479A JPS5617095A JP S5617095 A JPS5617095 A JP S5617095A JP 2477479 A JP2477479 A JP 2477479A JP 2477479 A JP2477479 A JP 2477479A JP S5617095 A JPS5617095 A JP S5617095A
- Authority
- JP
- Japan
- Prior art keywords
- prescribed
- layer
- width
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To perform a stabilized lateral mode oscillation and to turn out a high optical output by providing a groove with a prescribed width parallel to a reflecting surface of a semiconductor substrate and also by providing a channel, having a prescribed width, directly intersecting with said groove. CONSTITUTION:On an N-type substrate 10, masks having a prescribed size against a cleavage plane are formed in a line at a prescribed interval and each line running parallel to each other at a prescribed interval using photo resistor method and grooves 101 and 102 are made successively. On this substrate, an N-type Al0.3Ga0.7As layer 11 is grown in a flat form. Subsequently, an active layer 12 and a layer 13, which is thicker than the layer 11, are formed. Then a window of a prescribed size is opened and a Zn diffusing region 14 is provided. An SiO2 film is then removed, an window is opened in the SiO2 film 16 newly formed on the layer 13 with the center point at stripes and a Zn diffusing region 17 is formed. The diffusion front 18 of the above is controlled so that it is located in the middle of the layer 13. Then P-type and N-type ohmic contacts 19 and 20 are formed. The cleavage is cut in a way that a resonator can be formed in the vicinity of the central part and that the width of the lateral direction is set at a value close to the prescribed one with the stripe active region as width center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2477479A JPS5617095A (en) | 1979-03-02 | 1979-03-02 | Striped double-heterodyne junction semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2477479A JPS5617095A (en) | 1979-03-02 | 1979-03-02 | Striped double-heterodyne junction semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617095A true JPS5617095A (en) | 1981-02-18 |
Family
ID=12147510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2477479A Pending JPS5617095A (en) | 1979-03-02 | 1979-03-02 | Striped double-heterodyne junction semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617095A (en) |
-
1979
- 1979-03-02 JP JP2477479A patent/JPS5617095A/en active Pending
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