JPS6453491A - Light emitting device of semiconductor and manufacture thereof - Google Patents
Light emitting device of semiconductor and manufacture thereofInfo
- Publication number
- JPS6453491A JPS6453491A JP17745788A JP17745788A JPS6453491A JP S6453491 A JPS6453491 A JP S6453491A JP 17745788 A JP17745788 A JP 17745788A JP 17745788 A JP17745788 A JP 17745788A JP S6453491 A JPS6453491 A JP S6453491A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- becomes
- type
- region
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To improve transverse optical confinement effect by forming both sides of luminous stripe in an active region of hetero junction. CONSTITUTION:An n-type AlGa1-XAs layer 2 which becomes a first clad layer and a quantum well construction 3 which becomes an active layer is formed on a GaAs substrate 1. Then, an n-type Al2Ga1-ZAs layer 4 which becomes a second clad layer and an n-type GaAs layer 5 which becomes a cap layer are formed. And then, a silicon nitride film 20 is formed only on an area which becomes a luminous stripe, zinc is dissipated at approximately 600 to 900 degrees by the closed pipe method, and a p-type region 16 is formed on both sides of a region which becomes the luminous stripe. Then, the junction between the GaAs layer and the p-type region 16 constituting the quantum well structure 3 is in pn junction and constitutes a hetero-junction. The p-type AlGaAs region 16 has a smaller reflection index than the GaAs layer of quantum well layer so that optical confinement is effectively performed in the quantum well construction 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17745788A JPS6453491A (en) | 1982-08-12 | 1988-07-15 | Light emitting device of semiconductor and manufacture thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140301A JPS5929484A (en) | 1982-08-12 | 1982-08-12 | Semiconductor light emitting device |
| JP17745788A JPS6453491A (en) | 1982-08-12 | 1988-07-15 | Light emitting device of semiconductor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6453491A true JPS6453491A (en) | 1989-03-01 |
Family
ID=26472868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17745788A Pending JPS6453491A (en) | 1982-08-12 | 1988-07-15 | Light emitting device of semiconductor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6453491A (en) |
-
1988
- 1988-07-15 JP JP17745788A patent/JPS6453491A/en active Pending
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