JPS54111294A - Element of stripe type double hetero junction laser - Google Patents

Element of stripe type double hetero junction laser

Info

Publication number
JPS54111294A
JPS54111294A JP1888378A JP1888378A JPS54111294A JP S54111294 A JPS54111294 A JP S54111294A JP 1888378 A JP1888378 A JP 1888378A JP 1888378 A JP1888378 A JP 1888378A JP S54111294 A JPS54111294 A JP S54111294A
Authority
JP
Japan
Prior art keywords
layer
type
stripe type
proton
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1888378A
Other languages
Japanese (ja)
Other versions
JPS6046558B2 (en
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1888378A priority Critical patent/JPS6046558B2/en
Publication of JPS54111294A publication Critical patent/JPS54111294A/en
Publication of JPS6046558B2 publication Critical patent/JPS6046558B2/en
Expired legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve the characteristic by providing a stripe type layer in an active layer, ensuring that the band gap is narrower than the active layer and the effective refraction index differential is more than 10-4, carrier injection layers on both sides and loss layer in the injection layers.
CONSTITUTION: n type Al0.3Ga0.7As11, n type GaAs active layer 12 and p type Al0.3Ga0.7As13 are piled on n type GaAs10. Stripe type Zn diffusion layer 14 is installed by means of SiO2 mask on layer 13 and front surface of diffusion 15 is kept slightly deeper than the interface of layers 12 and 11. With these arrangements, p layer 12' is made and the specified refraction index differential is formed with n layer 12. Then, SiO2 is renewed, a mask with stripes with the width being narrowed partially is used while ensuring that layer 14 is kept at the center, proton applying layer 16 is provided and, then, the proton applied front surface 17 is stopped in layer 17. Then, p type and n type ohmic connections 18 and 19 are formed. With these arrangements, stabilized low transversal mode oscillation is obtained and relief vibration is suppressed, thus enabling to obtain stabilized dynamic characteristic.
COPYRIGHT: (C)1979,JPO&Japio
JP1888378A 1978-02-20 1978-02-20 Striped double heterojunction laser device Expired JPS6046558B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1888378A JPS6046558B2 (en) 1978-02-20 1978-02-20 Striped double heterojunction laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1888378A JPS6046558B2 (en) 1978-02-20 1978-02-20 Striped double heterojunction laser device

Publications (2)

Publication Number Publication Date
JPS54111294A true JPS54111294A (en) 1979-08-31
JPS6046558B2 JPS6046558B2 (en) 1985-10-16

Family

ID=11983948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1888378A Expired JPS6046558B2 (en) 1978-02-20 1978-02-20 Striped double heterojunction laser device

Country Status (1)

Country Link
JP (1) JPS6046558B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243193A (en) * 1985-08-20 1987-02-25 Nec Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243193A (en) * 1985-08-20 1987-02-25 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS6046558B2 (en) 1985-10-16

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