JPS54111294A - Element of stripe type double hetero junction laser - Google Patents
Element of stripe type double hetero junction laserInfo
- Publication number
- JPS54111294A JPS54111294A JP1888378A JP1888378A JPS54111294A JP S54111294 A JPS54111294 A JP S54111294A JP 1888378 A JP1888378 A JP 1888378A JP 1888378 A JP1888378 A JP 1888378A JP S54111294 A JPS54111294 A JP S54111294A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- stripe type
- proton
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To improve the characteristic by providing a stripe type layer in an active layer, ensuring that the band gap is narrower than the active layer and the effective refraction index differential is more than 10-4, carrier injection layers on both sides and loss layer in the injection layers.
CONSTITUTION: n type Al0.3Ga0.7As11, n type GaAs active layer 12 and p type Al0.3Ga0.7As13 are piled on n type GaAs10. Stripe type Zn diffusion layer 14 is installed by means of SiO2 mask on layer 13 and front surface of diffusion 15 is kept slightly deeper than the interface of layers 12 and 11. With these arrangements, p layer 12' is made and the specified refraction index differential is formed with n layer 12. Then, SiO2 is renewed, a mask with stripes with the width being narrowed partially is used while ensuring that layer 14 is kept at the center, proton applying layer 16 is provided and, then, the proton applied front surface 17 is stopped in layer 17. Then, p type and n type ohmic connections 18 and 19 are formed. With these arrangements, stabilized low transversal mode oscillation is obtained and relief vibration is suppressed, thus enabling to obtain stabilized dynamic characteristic.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1888378A JPS6046558B2 (en) | 1978-02-20 | 1978-02-20 | Striped double heterojunction laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1888378A JPS6046558B2 (en) | 1978-02-20 | 1978-02-20 | Striped double heterojunction laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54111294A true JPS54111294A (en) | 1979-08-31 |
JPS6046558B2 JPS6046558B2 (en) | 1985-10-16 |
Family
ID=11983948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1888378A Expired JPS6046558B2 (en) | 1978-02-20 | 1978-02-20 | Striped double heterojunction laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6046558B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6243193A (en) * | 1985-08-20 | 1987-02-25 | Nec Corp | Semiconductor laser |
-
1978
- 1978-02-20 JP JP1888378A patent/JPS6046558B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6243193A (en) * | 1985-08-20 | 1987-02-25 | Nec Corp | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6046558B2 (en) | 1985-10-16 |
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