JPS5736886A - Stripe type double hetero junction laser element - Google Patents
Stripe type double hetero junction laser elementInfo
- Publication number
- JPS5736886A JPS5736886A JP11127080A JP11127080A JPS5736886A JP S5736886 A JPS5736886 A JP S5736886A JP 11127080 A JP11127080 A JP 11127080A JP 11127080 A JP11127080 A JP 11127080A JP S5736886 A JPS5736886 A JP S5736886A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- laser element
- type double
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To perform stable basic lateral mode oscillation by forming a groove on a clad layer on an active layer, forming a guide layer in contact with the side of the groove of the clad layer and suppressing the increase of the threshold current value due to the leakage of the carrier. CONSTITUTION:An active layer 11 and a clad layer 12 are grown in liquid phase on a substrate 10. A groove is so formed in a stripe shape on the layer 12 vertically to the cleavage surface. Thereafter, a guide layer 13 is grown on the clad layer to fill the groove. After an SiO2 film 14 is formed, a striped window is so opened as to include the groove, and Cd is diffused in the layer 15. Subsequently, a P type ohmic contact 16 and an N type ohmic contact 17 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11127080A JPS5736886A (en) | 1980-08-13 | 1980-08-13 | Stripe type double hetero junction laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11127080A JPS5736886A (en) | 1980-08-13 | 1980-08-13 | Stripe type double hetero junction laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5736886A true JPS5736886A (en) | 1982-02-27 |
Family
ID=14556947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11127080A Pending JPS5736886A (en) | 1980-08-13 | 1980-08-13 | Stripe type double hetero junction laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5736886A (en) |
-
1980
- 1980-08-13 JP JP11127080A patent/JPS5736886A/en active Pending
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