JPS5789290A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5789290A
JPS5789290A JP16623680A JP16623680A JPS5789290A JP S5789290 A JPS5789290 A JP S5789290A JP 16623680 A JP16623680 A JP 16623680A JP 16623680 A JP16623680 A JP 16623680A JP S5789290 A JPS5789290 A JP S5789290A
Authority
JP
Japan
Prior art keywords
type
layer
clad layer
groove
striped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16623680A
Other languages
Japanese (ja)
Other versions
JPH0227829B2 (en
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16623680A priority Critical patent/JPS5789290A/en
Publication of JPS5789290A publication Critical patent/JPS5789290A/en
Publication of JPH0227829B2 publication Critical patent/JPH0227829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

PURPOSE:To obtain an inner striped type semiconductor with a low threshold value by flowing current only in a striped groove making the inside of the groove an n type clad layer and the outside a p type clad layer. CONSTITUTION:An n type locked up layer 37, an n type clad layer 31, a light guiding layer 32, and an n type active layer 33, a clad layer 34 and a cap layer 31 are consecutively formed on an p type GaAs substrate 36 doped with Zn. A p type stripe groove 38 is formed extending from a part of the n clad layer 31 to the light guiding layer 32 by diffusing the Zn in the substrate 36 by heat treatment. Because the current flows only in the inside striped groove, a low threshold current semiconductor laser element is obtained.
JP16623680A 1980-11-25 1980-11-25 Semiconductor laser element Granted JPS5789290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16623680A JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16623680A JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5789290A true JPS5789290A (en) 1982-06-03
JPH0227829B2 JPH0227829B2 (en) 1990-06-20

Family

ID=15827630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16623680A Granted JPS5789290A (en) 1980-11-25 1980-11-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5789290A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02113586A (en) * 1988-10-21 1990-04-25 Sharp Corp Semiconductor laser element
JPH08213696A (en) * 1995-10-23 1996-08-20 Sharp Corp Semiconductor laser element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (en) * 1974-11-13 1976-05-17 Hitachi Ltd HANDOT AIREEZA SOCHI
JPS5158879A (en) * 1974-11-19 1976-05-22 Nippon Telegraph & Telephone
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element
JPS55125690A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5156188A (en) * 1974-11-13 1976-05-17 Hitachi Ltd HANDOT AIREEZA SOCHI
JPS5158879A (en) * 1974-11-19 1976-05-22 Nippon Telegraph & Telephone
JPS5290280A (en) * 1976-01-22 1977-07-29 Nec Corp Semiconductor laser element
JPS55125690A (en) * 1979-03-22 1980-09-27 Nec Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02113586A (en) * 1988-10-21 1990-04-25 Sharp Corp Semiconductor laser element
JPH08213696A (en) * 1995-10-23 1996-08-20 Sharp Corp Semiconductor laser element

Also Published As

Publication number Publication date
JPH0227829B2 (en) 1990-06-20

Similar Documents

Publication Publication Date Title
JPS5312288A (en) Light emitting semiconductor device
JPS5789290A (en) Semiconductor laser element
JPS5673487A (en) Semiconductor laser and its manufacture
JPS57159084A (en) Semiconductor laser element
JPS566480A (en) Semiconductor light emitting diode
JPS5789286A (en) Semiconductor laser element
JPS5795689A (en) Stripe shaped type double hetero junction laser element
JPS57162483A (en) Semiconductor luminous device
JPS6482594A (en) Semiconductor laser device and manufacture thereof
JPS5591892A (en) Semiconductor laser light emission device
JPS5643794A (en) Semiconductor laser
JPS57190373A (en) Light emitting element with photodetector
JPS5789284A (en) Semiconductor laser
JPS57159080A (en) Semiconductor laser element
JPS5638885A (en) Light emission semiconductor device
JPS56164590A (en) Semiconductor laser
JPS57198681A (en) Optical semiconductor
JPS5789287A (en) Semiconductor laser element
JPS5669885A (en) Semiconductor laser device
JPS5580388A (en) Semiconductor light emitting device
JPS57118687A (en) Manufacture of semiconductor laser
JPS5638884A (en) Stripe-type double hetero junction laser element
JPS5799792A (en) Semiconductor laser device
JPS5580386A (en) Manufacture of semiconductor light emitting device
JPS57198677A (en) Optical semiconductor device