JPS5795689A - Stripe shaped type double hetero junction laser element - Google Patents

Stripe shaped type double hetero junction laser element

Info

Publication number
JPS5795689A
JPS5795689A JP17162380A JP17162380A JPS5795689A JP S5795689 A JPS5795689 A JP S5795689A JP 17162380 A JP17162380 A JP 17162380A JP 17162380 A JP17162380 A JP 17162380A JP S5795689 A JPS5795689 A JP S5795689A
Authority
JP
Japan
Prior art keywords
layer
type
stripe
oscillation
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17162380A
Other languages
Japanese (ja)
Inventor
Shinsuke Ueno
Hideo Kawano
Shohei Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17162380A priority Critical patent/JPS5795689A/en
Publication of JPS5795689A publication Critical patent/JPS5795689A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To maintain a stable horizontal oscillation with a low threshold current by providing a stripe-shaped guide layer having a projection that thins out at ends with a smaller refractivity than an n type active layer whereby covering the both sides of the guide layer by a p type clad layer with a part buried in an n type clad layer. CONSTITUTION:A V shaped groove 12 is formed in p-InP11 on n-InP10 and n- InGaAsP13 is formed covering the groove. An n-InGaAsP active layer 14 and a p-InP clad layer 15 are laminated to cover SiO216. A Cd diffusion layer 17 is formed by opening a stripe shaped window including the V-shaped groove 12 and a p type ohmic connection layer 18 and an n n ohmic connection layer 19 are formed on the layer 17. This current narrowing construction contributes effectively to the oscillation of the injected carrier, lowering the threshold current and maintaing stable elemental mode oscillation due to the convergence of light to the center caused by a smaller refractivity toward the ends. This also decreases a flare angle in vertical direction making the light source of almost concentric circles and increasing the coupling efficiency with fiber and also preventing the leak of carriers from the active layers.
JP17162380A 1980-12-05 1980-12-05 Stripe shaped type double hetero junction laser element Pending JPS5795689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17162380A JPS5795689A (en) 1980-12-05 1980-12-05 Stripe shaped type double hetero junction laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17162380A JPS5795689A (en) 1980-12-05 1980-12-05 Stripe shaped type double hetero junction laser element

Publications (1)

Publication Number Publication Date
JPS5795689A true JPS5795689A (en) 1982-06-14

Family

ID=15926602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17162380A Pending JPS5795689A (en) 1980-12-05 1980-12-05 Stripe shaped type double hetero junction laser element

Country Status (1)

Country Link
JP (1) JPS5795689A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225683A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser
JPS5923585A (en) * 1982-07-30 1984-02-07 Sharp Corp Semiconductor laser element
US4939743A (en) * 1988-05-18 1990-07-03 Sharp Kabushiki Kaisha Semiconductor laser device
JP2006285307A (en) * 2005-03-31 2006-10-19 Yoshikazu Shimizu Paper sheet discriminator
CN102608070A (en) * 2012-03-27 2012-07-25 北京航空航天大学 Probe type liquid refractive index on-line real-time detection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225683A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser
JPS6367349B2 (en) * 1982-06-22 1988-12-26 Mitsubishi Electric Corp
JPS5923585A (en) * 1982-07-30 1984-02-07 Sharp Corp Semiconductor laser element
US4939743A (en) * 1988-05-18 1990-07-03 Sharp Kabushiki Kaisha Semiconductor laser device
JP2006285307A (en) * 2005-03-31 2006-10-19 Yoshikazu Shimizu Paper sheet discriminator
CN102608070A (en) * 2012-03-27 2012-07-25 北京航空航天大学 Probe type liquid refractive index on-line real-time detection device

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