JPS57152184A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57152184A
JPS57152184A JP3757381A JP3757381A JPS57152184A JP S57152184 A JPS57152184 A JP S57152184A JP 3757381 A JP3757381 A JP 3757381A JP 3757381 A JP3757381 A JP 3757381A JP S57152184 A JPS57152184 A JP S57152184A
Authority
JP
Japan
Prior art keywords
type inp
layer
inp layer
type
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3757381A
Other languages
Japanese (ja)
Other versions
JPS6320390B2 (en
Inventor
Hiroyoshi Rangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3757381A priority Critical patent/JPS57152184A/en
Publication of JPS57152184A publication Critical patent/JPS57152184A/en
Publication of JPS6320390B2 publication Critical patent/JPS6320390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To elevate withstand voltage and reduce reactive current in a semiconductor device by a method wherein impurity concentration is adjusted in each component of a PNPN type semiconductor lamination wherein a mesa shaped oscillating section is imbedded. CONSTITUTION:An N type InP layer 2, undoped InGaAsP active layer 3, and P type InP layer 4 are sequentially piled upon an N type InP layer 1 one upon another. Etching is effected as deep as to reach the layer 2 and a stripe shaped ridge is formed. After this, a P type InP layer 5 with impurity concentration not less than 0.8X10<18>/cm<3>, N type InP layer 6 with impurity concentration not more than 3X10<17>/cm<3>, and P type InP electrode forming layer 7 are provided. This increases the P-N-P-N junction withstand voltage and a high energy semiconductor laser device of an imbedded type hetero junction structure is obtained.
JP3757381A 1981-03-16 1981-03-16 Semiconductor laser device Granted JPS57152184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757381A JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757381A JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57152184A true JPS57152184A (en) 1982-09-20
JPS6320390B2 JPS6320390B2 (en) 1988-04-27

Family

ID=12501268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757381A Granted JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57152184A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179289A (en) * 1984-09-25 1986-04-22 シーメンス、アクチエンゲゼルシヤフト Making of laser diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179289A (en) * 1984-09-25 1986-04-22 シーメンス、アクチエンゲゼルシヤフト Making of laser diode

Also Published As

Publication number Publication date
JPS6320390B2 (en) 1988-04-27

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