JPS6477166A - Semiconductor transistor - Google Patents

Semiconductor transistor

Info

Publication number
JPS6477166A
JPS6477166A JP23380187A JP23380187A JPS6477166A JP S6477166 A JPS6477166 A JP S6477166A JP 23380187 A JP23380187 A JP 23380187A JP 23380187 A JP23380187 A JP 23380187A JP S6477166 A JPS6477166 A JP S6477166A
Authority
JP
Japan
Prior art keywords
base
section
emitter
collector
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23380187A
Other languages
Japanese (ja)
Inventor
Hiroshi Kaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23380187A priority Critical patent/JPS6477166A/en
Publication of JPS6477166A publication Critical patent/JPS6477166A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To decrease a base in resistance as electrons are kept high in mobility speed so as to improve a transistor in a frequency property by a method wherein a base section of a heterojunction bipolar transistor (HBT) is constituted in such a manner as semiconductor thin films of two or more kinds, which are different from each other in a band gap, are laminated into a laminated layer composed of a few layers, which are made to be thicker at a collector side than at an emitter side, for the formation of the base. CONSTITUTION:A collector section 16 and a collector electrode 17 both doped with an N-type impurity are formed on a P-type doped semiconductor substrate 15. P-type doped semiconductor thin films 18 and 19 different from each other in a band gap are made to vary in thickness and alternately laminated for the formation of a base section. And, a base electrode 20, an N-type doped emitter section 21, and an emitter electrode 22 are formed into an HBT. Thereby, an electric field is applied in such a manner as electrons are made to flow from the emitter side to the collector side and increase remarkably in mobility in the base section. Therefore, the base can be decreased in resistance as electrons are maintained high in mobility in the base section, and thus a transistor can be remarkably improved in a frequency property.
JP23380187A 1987-09-18 1987-09-18 Semiconductor transistor Pending JPS6477166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23380187A JPS6477166A (en) 1987-09-18 1987-09-18 Semiconductor transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23380187A JPS6477166A (en) 1987-09-18 1987-09-18 Semiconductor transistor

Publications (1)

Publication Number Publication Date
JPS6477166A true JPS6477166A (en) 1989-03-23

Family

ID=16960794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23380187A Pending JPS6477166A (en) 1987-09-18 1987-09-18 Semiconductor transistor

Country Status (1)

Country Link
JP (1) JPS6477166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414273A (en) * 1993-03-05 1995-05-09 Mitsubishi Denki Kabushiki Kaisha Heterojunction bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414273A (en) * 1993-03-05 1995-05-09 Mitsubishi Denki Kabushiki Kaisha Heterojunction bipolar transistor

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