JPS6421961A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS6421961A JPS6421961A JP17825187A JP17825187A JPS6421961A JP S6421961 A JPS6421961 A JP S6421961A JP 17825187 A JP17825187 A JP 17825187A JP 17825187 A JP17825187 A JP 17825187A JP S6421961 A JPS6421961 A JP S6421961A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- thin film
- electrode
- type silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable a transistor at high emitter ground current amplifier factor at low base resistance similar to HBT to be manufuctured by selecting emitter composing materials imposing no restriction on the lattice constant and crystalline structure by a method wherein an emitter part is structured by different kinds of semiconductor thin film layers laminated. CONSTITUTION:An emitter part is formed by alternately laminating multiple layers of semiconductor thin films exceeding two kinds. For example, a collector part 2 comprising N Type silicon, a collector electrode 3 comprising a metal such as Al, a base part 4 comprising P type silicon, a base electrode 5, the emitter part comprising N type doped GaAs thin film 6 and an N type doped silicon thin film 7 alternately laminated and an emitter electrode 8 are provided on a P type silicon substrate 1. Through these procedures, the band gap Eg of the emitter part 6 can be made larger than the Eg of base part 4 so that the hole running from the base 4 to the emitter 6 may be reduced enabling the emitter ground current amplification factor HFE to be increased while keeping the base resistance rb at low value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17825187A JPS6421961A (en) | 1987-07-16 | 1987-07-16 | Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17825187A JPS6421961A (en) | 1987-07-16 | 1987-07-16 | Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421961A true JPS6421961A (en) | 1989-01-25 |
Family
ID=16045226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17825187A Pending JPS6421961A (en) | 1987-07-16 | 1987-07-16 | Transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421961A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02237035A (en) * | 1989-03-09 | 1990-09-19 | Fujitsu Ltd | Semiconductor device |
EP1019966A1 (en) * | 1997-09-29 | 2000-07-19 | The National Scientific Corp. | Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
-
1987
- 1987-07-16 JP JP17825187A patent/JPS6421961A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02237035A (en) * | 1989-03-09 | 1990-09-19 | Fujitsu Ltd | Semiconductor device |
EP1019966A1 (en) * | 1997-09-29 | 2000-07-19 | The National Scientific Corp. | Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
EP1019966A4 (en) * | 1997-09-29 | 2000-07-19 | Nat Scient Corp | Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
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