JPS6421961A - Transistor - Google Patents

Transistor

Info

Publication number
JPS6421961A
JPS6421961A JP17825187A JP17825187A JPS6421961A JP S6421961 A JPS6421961 A JP S6421961A JP 17825187 A JP17825187 A JP 17825187A JP 17825187 A JP17825187 A JP 17825187A JP S6421961 A JPS6421961 A JP S6421961A
Authority
JP
Japan
Prior art keywords
emitter
base
thin film
electrode
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17825187A
Other languages
Japanese (ja)
Inventor
Hiroshi Kaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17825187A priority Critical patent/JPS6421961A/en
Publication of JPS6421961A publication Critical patent/JPS6421961A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable a transistor at high emitter ground current amplifier factor at low base resistance similar to HBT to be manufuctured by selecting emitter composing materials imposing no restriction on the lattice constant and crystalline structure by a method wherein an emitter part is structured by different kinds of semiconductor thin film layers laminated. CONSTITUTION:An emitter part is formed by alternately laminating multiple layers of semiconductor thin films exceeding two kinds. For example, a collector part 2 comprising N Type silicon, a collector electrode 3 comprising a metal such as Al, a base part 4 comprising P type silicon, a base electrode 5, the emitter part comprising N type doped GaAs thin film 6 and an N type doped silicon thin film 7 alternately laminated and an emitter electrode 8 are provided on a P type silicon substrate 1. Through these procedures, the band gap Eg of the emitter part 6 can be made larger than the Eg of base part 4 so that the hole running from the base 4 to the emitter 6 may be reduced enabling the emitter ground current amplification factor HFE to be increased while keeping the base resistance rb at low value.
JP17825187A 1987-07-16 1987-07-16 Transistor Pending JPS6421961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17825187A JPS6421961A (en) 1987-07-16 1987-07-16 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17825187A JPS6421961A (en) 1987-07-16 1987-07-16 Transistor

Publications (1)

Publication Number Publication Date
JPS6421961A true JPS6421961A (en) 1989-01-25

Family

ID=16045226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17825187A Pending JPS6421961A (en) 1987-07-16 1987-07-16 Transistor

Country Status (1)

Country Link
JP (1) JPS6421961A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02237035A (en) * 1989-03-09 1990-09-19 Fujitsu Ltd Semiconductor device
EP1019966A1 (en) * 1997-09-29 2000-07-19 The National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02237035A (en) * 1989-03-09 1990-09-19 Fujitsu Ltd Semiconductor device
EP1019966A1 (en) * 1997-09-29 2000-07-19 The National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
EP1019966A4 (en) * 1997-09-29 2000-07-19 Nat Scient Corp Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction

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