JPS57157539A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57157539A
JPS57157539A JP56042897A JP4289781A JPS57157539A JP S57157539 A JPS57157539 A JP S57157539A JP 56042897 A JP56042897 A JP 56042897A JP 4289781 A JP4289781 A JP 4289781A JP S57157539 A JPS57157539 A JP S57157539A
Authority
JP
Japan
Prior art keywords
layer
layers
substrate
epitaxial
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56042897A
Other languages
Japanese (ja)
Inventor
Seiya Tokumaru
Masanori Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56042897A priority Critical patent/JPS57157539A/en
Publication of JPS57157539A publication Critical patent/JPS57157539A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To integrate I<2>L, a linear element and a bipolar element on a single substrate by selectively forming a buried layer having the structure of laminating or a single layer to the Si substrate and an epitaxial layer under an active region. CONSTITUTION:N<+> layers 4a-4c are buried onto the P type Si substrate 2, the N epitaxial layer 6 is stacked, N<+> layers 8a, 8b are stacked onto the layers 4a, 4b, an N<+> epitaxial layer 10 is laminated, and the epitaxial layers are isolated by P layers 12, 14, 16, 18 reaching the substrate 2. P<+> layers 30, 32 and 50, 52, 60 are formed simultaneously, N<+> layers 38, 40 and 54, 62, 64 are shaped, and the junction regions of the P<+> layer 32 and P layers 34, 36 are used as the resistors of element sections 22, 24. According to this constitution, the amount of holes stored decreases because an N<+> layer 10a is thin in the I<2>L 10, speed is increased, a current amplification factor is augmented, and integration can be heightened. Since an N<+> layer 10b is thin in the bipolar element 22, speed is increased, series resistance is low, and output voltage at the time of saturation is low. With the linear element 24, the epitaxial layer can be laminated in desired thickness, a layer such as a layer 6c is thickened, concentration is kept at low concentration regardless of regions 20, 22, and dielectric resistance can be increased.
JP56042897A 1981-03-24 1981-03-24 Semiconductor integrated circuit device Pending JPS57157539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042897A JPS57157539A (en) 1981-03-24 1981-03-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042897A JPS57157539A (en) 1981-03-24 1981-03-24 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57157539A true JPS57157539A (en) 1982-09-29

Family

ID=12648814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042897A Pending JPS57157539A (en) 1981-03-24 1981-03-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57157539A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
CN109244060A (en) * 2017-07-11 2019-01-18 台湾积体电路制造股份有限公司 Semiconductor devices and forming method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010586A (en) * 1973-05-25 1975-02-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010586A (en) * 1973-05-25 1975-02-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
CN109244060A (en) * 2017-07-11 2019-01-18 台湾积体电路制造股份有限公司 Semiconductor devices and forming method thereof

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