JPS6444064A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPS6444064A
JPS6444064A JP20210787A JP20210787A JPS6444064A JP S6444064 A JPS6444064 A JP S6444064A JP 20210787 A JP20210787 A JP 20210787A JP 20210787 A JP20210787 A JP 20210787A JP S6444064 A JPS6444064 A JP S6444064A
Authority
JP
Japan
Prior art keywords
collector
layer
base
hetero
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20210787A
Other languages
Japanese (ja)
Inventor
Shinichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20210787A priority Critical patent/JPS6444064A/en
Priority to US07/230,592 priority patent/US4958208A/en
Publication of JPS6444064A publication Critical patent/JPS6444064A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a hetero-junction bipolar transistor having a high reliability by providing a first collector layer having at least one structure for continuously or discontinuously increasing a band gap as it separates farther from a base- collector junction. CONSTITUTION:In a hetero junction bipolar transistor (HBT) formed of essential layers of an emitter layer 5, a base layer 6 and collector layers 7, 8, the first layer 7 has at least one structure for continuously or discontinuously increasing a band gap as it separates farther from a base-collector junction, and the second layer 8 is formed of a semiconductor having a smaller energy gap than the maximum energy gap of the first collector layer. Accordingly, a potential difference between the base and the collector is concentrated in a boundary between the first collector layer and the second collector layer, and supplemented by the difference of electron affinity force of the first and second layers. Thus, in the HBT for running in the collector at a high speed, the reliability including the stable operating conditions and manufacturing method for forming a practical high speed transistor circuit is improved.
JP20210787A 1987-08-12 1987-08-12 Hetero-junction bipolar transistor Pending JPS6444064A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20210787A JPS6444064A (en) 1987-08-12 1987-08-12 Hetero-junction bipolar transistor
US07/230,592 US4958208A (en) 1987-08-12 1988-08-08 Bipolar transistor with abrupt potential discontinuity in collector region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20210787A JPS6444064A (en) 1987-08-12 1987-08-12 Hetero-junction bipolar transistor

Publications (1)

Publication Number Publication Date
JPS6444064A true JPS6444064A (en) 1989-02-16

Family

ID=16452078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20210787A Pending JPS6444064A (en) 1987-08-12 1987-08-12 Hetero-junction bipolar transistor

Country Status (1)

Country Link
JP (1) JPS6444064A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007253103A (en) * 2006-03-24 2007-10-04 Yoshino Kogyosho Co Ltd Push down head and pump with push down head
US7285877B2 (en) 2004-04-02 2007-10-23 Black & Decker Inc. Electronic fastening tool
JP4876278B2 (en) * 2005-05-25 2012-02-15 ウェラ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Spray head with flexible nozzle insert
JP2014123642A (en) * 2012-12-21 2014-07-03 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor
US9960509B2 (en) 2010-04-07 2018-05-01 Black & Decker Inc. Power tool with light unit
USD1017361S1 (en) 2021-05-06 2024-03-12 Black & Decker Inc. Drill

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289860A (en) * 1987-05-21 1988-11-28 Nippon Telegr & Teleph Corp <Ntt> Bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289860A (en) * 1987-05-21 1988-11-28 Nippon Telegr & Teleph Corp <Ntt> Bipolar transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7285877B2 (en) 2004-04-02 2007-10-23 Black & Decker Inc. Electronic fastening tool
JP4876278B2 (en) * 2005-05-25 2012-02-15 ウェラ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Spray head with flexible nozzle insert
JP2007253103A (en) * 2006-03-24 2007-10-04 Yoshino Kogyosho Co Ltd Push down head and pump with push down head
US9960509B2 (en) 2010-04-07 2018-05-01 Black & Decker Inc. Power tool with light unit
JP2014123642A (en) * 2012-12-21 2014-07-03 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor
USD1017361S1 (en) 2021-05-06 2024-03-12 Black & Decker Inc. Drill

Similar Documents

Publication Publication Date Title
US5147775A (en) Method of fabricating a high-frequency bipolar transistor
KR880001058A (en) Manufacturing method of heterojunction bipolar transistor
JPS6472562A (en) Transistor
JP2600485B2 (en) Semiconductor device
EP0339960A3 (en) Bipolar transistor and method of manufacturing the same
JPS6444064A (en) Hetero-junction bipolar transistor
EP0386413A3 (en) Complementary transistor structure and method for manufacture
EP0385450A3 (en) Semiconductor device with mis capacitor
GB1533156A (en) Semiconductor integrated circuits
GB1504032A (en) Muting circuits
JPS6461058A (en) Bipolar transistor and manufacture thereof
JPS57197862A (en) Active semiconductor device and manufacture thereof
JPS55103756A (en) Electrostatic induction transistor integrated circuit
JPH04127534A (en) Semiconductor device
JPS56112751A (en) Switching element
JPS6457665A (en) Heterojunction bipolar transistor
JPH0513377B2 (en)
JPS5561063A (en) Schottky barrier diode built-in transistor
US3165429A (en) Method of making a diffused base transistor
JPS5790975A (en) Composite type power transistor
JPS6477166A (en) Semiconductor transistor
JPS642359A (en) Hetero-junction bipolar transistor
JPS55158663A (en) Transistor
JPS5382276A (en) Production of semiconductor device
JPS5710964A (en) Manufacture of semiconductor device