JPS642358A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPS642358A
JPS642358A JP15810087A JP15810087A JPS642358A JP S642358 A JPS642358 A JP S642358A JP 15810087 A JP15810087 A JP 15810087A JP 15810087 A JP15810087 A JP 15810087A JP S642358 A JPS642358 A JP S642358A
Authority
JP
Japan
Prior art keywords
base layers
layer
impurity concentration
dopant
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15810087A
Other languages
Japanese (ja)
Other versions
JPH012358A (en
JPH0656852B2 (en
Inventor
Shinichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62158100A priority Critical patent/JPH0656852B2/en
Priority to EP87119044A priority patent/EP0273363B1/en
Priority to US07/136,589 priority patent/US4929997A/en
Priority to DE8787119044T priority patent/DE3780284T2/en
Publication of JPH012358A publication Critical patent/JPH012358A/en
Publication of JPS642358A publication Critical patent/JPS642358A/en
Publication of JPH0656852B2 publication Critical patent/JPH0656852B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make injection carriers from an emitter layer to reach to a collector layer by plural repetition in base layers, and to shorten the transit time of the base layers by depositing laminating consisting of low-concentration and high-concentration base layers in specified thickness so that a plurality of electron affinity is reduced in succession in the base layers and forming the emitter layer having small electron affinity onto a deposit.
CONSTITUTION: The upper section of a semi-insulating substrate 1 is partitioned by insulating regions 1a formed by ion-implanting proton, a high concentration layer 2 having impurity concentration at a specified value is shaped, using Si as a dopant, and a collector layer 3 having impurity concentration at a specified value is formed, employing Si as the dopant onto the layer 2. Base layers 4a, 4b having impurity concentration at predetermined low and high values, using Be as a dopant are laminated, and base layers 5a, 5b having impurity concentration at fixed low and high values, employing Be as a dopant are laminated. All emitter layer 6 having impurity concentration at a specified value and a high concentration layer 7 having impurity concentration at a predetermined value, using Si as the dopant are shaped to a fixed pattern in succession.
COPYRIGHT: (C)1989,JPO&Japio
JP62158100A 1986-12-22 1987-06-24 Heterojunction bipolar transistor Expired - Fee Related JPH0656852B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62158100A JPH0656852B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor
EP87119044A EP0273363B1 (en) 1986-12-22 1987-12-22 Heterojunction bipolar transistor with ballistic operation
US07/136,589 US4929997A (en) 1986-12-22 1987-12-22 Heterojunction bipolar transistor with ballistic operation
DE8787119044T DE3780284T2 (en) 1986-12-22 1987-12-22 BIPOLAR HETEROUISITION TRANSISTOR WITH BALLISTIC OPERATION.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158100A JPH0656852B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor

Publications (3)

Publication Number Publication Date
JPH012358A JPH012358A (en) 1989-01-06
JPS642358A true JPS642358A (en) 1989-01-06
JPH0656852B2 JPH0656852B2 (en) 1994-07-27

Family

ID=15664302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158100A Expired - Fee Related JPH0656852B2 (en) 1986-12-22 1987-06-24 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JPH0656852B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946299A (en) * 1987-05-13 1990-08-07 Canon Kabushiki Kaisha Document processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63158873A (en) * 1986-12-22 1988-07-01 Nec Corp Ballistic hetero-junction bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63158873A (en) * 1986-12-22 1988-07-01 Nec Corp Ballistic hetero-junction bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946299A (en) * 1987-05-13 1990-08-07 Canon Kabushiki Kaisha Document processing apparatus

Also Published As

Publication number Publication date
JPH0656852B2 (en) 1994-07-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees