JPS535979A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS535979A JPS535979A JP8076176A JP8076176A JPS535979A JP S535979 A JPS535979 A JP S535979A JP 8076176 A JP8076176 A JP 8076176A JP 8076176 A JP8076176 A JP 8076176A JP S535979 A JPS535979 A JP S535979A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- preparation
- semiconductor device
- impurities
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To form a diffusion layer by the diffusion of impurities having a small diffusion coefficent such as Sb and form a high concentration region on the surface of the diffusion layer by diffusion of P impurities, thereby suppressing fluctuations in punch through voltage and improving the ohmic contact with respect to a metallic electrode formed on the surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8076176A JPS535979A (en) | 1976-07-06 | 1976-07-06 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8076176A JPS535979A (en) | 1976-07-06 | 1976-07-06 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS535979A true JPS535979A (en) | 1978-01-19 |
Family
ID=13727389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8076176A Pending JPS535979A (en) | 1976-07-06 | 1976-07-06 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS535979A (en) |
-
1976
- 1976-07-06 JP JP8076176A patent/JPS535979A/en active Pending
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