JPS535979A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS535979A
JPS535979A JP8076176A JP8076176A JPS535979A JP S535979 A JPS535979 A JP S535979A JP 8076176 A JP8076176 A JP 8076176A JP 8076176 A JP8076176 A JP 8076176A JP S535979 A JPS535979 A JP S535979A
Authority
JP
Japan
Prior art keywords
diffusion
preparation
semiconductor device
impurities
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8076176A
Other languages
Japanese (ja)
Inventor
Kenji Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8076176A priority Critical patent/JPS535979A/en
Publication of JPS535979A publication Critical patent/JPS535979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form a diffusion layer by the diffusion of impurities having a small diffusion coefficent such as Sb and form a high concentration region on the surface of the diffusion layer by diffusion of P impurities, thereby suppressing fluctuations in punch through voltage and improving the ohmic contact with respect to a metallic electrode formed on the surface.
COPYRIGHT: (C)1978,JPO&Japio
JP8076176A 1976-07-06 1976-07-06 Preparation of semiconductor device Pending JPS535979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8076176A JPS535979A (en) 1976-07-06 1976-07-06 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8076176A JPS535979A (en) 1976-07-06 1976-07-06 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS535979A true JPS535979A (en) 1978-01-19

Family

ID=13727389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8076176A Pending JPS535979A (en) 1976-07-06 1976-07-06 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS535979A (en)

Similar Documents

Publication Publication Date Title
JPS52101990A (en) Semiconductor device for photoelectric transducer and its manufacture
JPS5290273A (en) Semiconductor device
JPS5356972A (en) Mesa type semiconductor device
JPS53142196A (en) Bipolar type semiconductor device
JPS5439573A (en) Compound semiconductor device
JPS535979A (en) Preparation of semiconductor device
JPS5338271A (en) Semiconductor device
JPS5339081A (en) Semiconductor device
JPS523383A (en) Manufacturing method of semiconductor device electrode
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS5239372A (en) Electrode structure of semiconductor device
JPS5360171A (en) Electrode for silicon substrate and its production
JPS5263067A (en) Production of semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS52137274A (en) Thrystor
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5390784A (en) Production of semiconductor device
JPS5353965A (en) Semiconductor device and its production
JPS5376763A (en) Semiconductor rectifying device
JPS5329668A (en) Production of semiconductor device
JPS5380184A (en) Manufacture of semiconductor device
JPS5214377A (en) Semiconductor device
JPS53110461A (en) Semiconductor device
JPS5240986A (en) Process for production of semiconductor element
JPS5329662A (en) Production of semiconductor device