JPS5459891A - Photo detector - Google Patents
Photo detectorInfo
- Publication number
- JPS5459891A JPS5459891A JP12695177A JP12695177A JPS5459891A JP S5459891 A JPS5459891 A JP S5459891A JP 12695177 A JP12695177 A JP 12695177A JP 12695177 A JP12695177 A JP 12695177A JP S5459891 A JPS5459891 A JP S5459891A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- traps
- photons
- electrons
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To increase the sensitivity of external outputs and spectral sensitivity regions by providing a PN junction in the group III-V compound semiconductor layer introduced with isoelectronic traps.
CONSTITUTION: A PN junction 2 is formed by using the crystal containing isoelectronic traps 1. Or a thin metal layer 3 such as of W, Au or the like is deposited to form a Schottky barrier 4. If with such constitution light 5 is radiated in the PN junction 2 or Schottky barrier 4, the absorption of photons by interband spacings takes place, forming electron-hole pairs 6. At the same time, the absorption of photons by the isoelectronic traps 1 also takes place, producing excitons 7. Hence, in the region where internal fields are strong such as in the space charge region of the PN junction 2 or the barrier 4, excitons 7 decompose to electrons 8 and holes 9, and the electrons 8 flow into the N type layer 10 and the holes 9 into the P type layer 11, generating photo current. This causes the external output to be increased by as much as the photons absorbed by the traps
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12695177A JPS5459891A (en) | 1977-10-20 | 1977-10-20 | Photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12695177A JPS5459891A (en) | 1977-10-20 | 1977-10-20 | Photo detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5459891A true JPS5459891A (en) | 1979-05-14 |
Family
ID=14947923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12695177A Pending JPS5459891A (en) | 1977-10-20 | 1977-10-20 | Photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5459891A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2015033706A1 (en) * | 2013-09-04 | 2017-03-02 | 国立研究開発法人産業技術総合研究所 | Semiconductor device, manufacturing method thereof, and semiconductor integrated circuit |
| WO2017169122A1 (en) * | 2016-03-30 | 2017-10-05 | ソニー株式会社 | Photoelectric conversion element and photoelectric conversion device |
| WO2018088285A1 (en) * | 2016-11-14 | 2018-05-17 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state imaging apparatus, method for manufacturing same, and electronic device |
-
1977
- 1977-10-20 JP JP12695177A patent/JPS5459891A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2015033706A1 (en) * | 2013-09-04 | 2017-03-02 | 国立研究開発法人産業技術総合研究所 | Semiconductor device, manufacturing method thereof, and semiconductor integrated circuit |
| US9711597B2 (en) | 2013-09-04 | 2017-07-18 | National Institute Of Advanced Industrial Science And Technology | Semiconductor element, method for manufacturing same, and semiconductor integrated circuit |
| JP2017191947A (en) * | 2013-09-04 | 2017-10-19 | 国立研究開発法人産業技術総合研究所 | Semiconductor device and manufacturing method therefor, and semiconductor integrated circuit |
| WO2017169122A1 (en) * | 2016-03-30 | 2017-10-05 | ソニー株式会社 | Photoelectric conversion element and photoelectric conversion device |
| KR20180125468A (en) * | 2016-03-30 | 2018-11-23 | 소니 주식회사 | Photoelectric conversion element and photoelectric conversion device |
| JPWO2017169122A1 (en) * | 2016-03-30 | 2019-02-07 | ソニー株式会社 | Photoelectric conversion element and photoelectric conversion device |
| US10483306B2 (en) | 2016-03-30 | 2019-11-19 | Sony Corporation | Photoelectric conversion element and photoelectric conversion device |
| TWI731035B (en) * | 2016-03-30 | 2021-06-21 | 日商新力股份有限公司 | Photoelectric conversion element and photoelectric conversion device |
| WO2018088285A1 (en) * | 2016-11-14 | 2018-05-17 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state imaging apparatus, method for manufacturing same, and electronic device |
| CN109937482A (en) * | 2016-11-14 | 2019-06-25 | 索尼半导体解决方案公司 | Solid state image pickup device, its manufacturing method and electronic device |
| US11398522B2 (en) | 2016-11-14 | 2022-07-26 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, manufacturing method thereof, and electronic device |
| US11830906B2 (en) | 2016-11-14 | 2023-11-28 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, manufacturing method thereof, and electronic device |
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