JPS5595886A - Neutron detector - Google Patents
Neutron detectorInfo
- Publication number
- JPS5595886A JPS5595886A JP294179A JP294179A JPS5595886A JP S5595886 A JPS5595886 A JP S5595886A JP 294179 A JP294179 A JP 294179A JP 294179 A JP294179 A JP 294179A JP S5595886 A JPS5595886 A JP S5595886A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- single crystal
- silicon single
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Radiation (AREA)
Abstract
PURPOSE: To obtain a low-noise and high-sensitivity neutron detector which is easy to realize the miniaturization of the overall structure and the converter part along with the high measurement accuracy and high resolution respectively, by forming the boron phosphide epitaxial layer onto the silicon single crystal of the substrate.
CONSTITUTION: Substrate 1 is produced with the silicon single crystal which generates the carrier when the radiation is put in used at least at the surface layer of the substrate. Then boron phosphide epitaxial layer 2 is grown via the vapor phase onto the surface of the silicon single crystal of substrate 1. In that case, the temperature of substrate 1 is set at 900W1100°C, and PH3 and B2H6 are used preferably for the volatile compound as the source. Also silicon epitaxial layer 3 can be provided onto layer 2 mentioned above. This layer 3 features the single crystal substantially with thickness of 1W50μ secured generally and then formed preferably into the surface lamination layer type, PIN type or PN-junction type respectively.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP294179A JPS5595886A (en) | 1979-01-17 | 1979-01-17 | Neutron detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP294179A JPS5595886A (en) | 1979-01-17 | 1979-01-17 | Neutron detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5595886A true JPS5595886A (en) | 1980-07-21 |
Family
ID=11543377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP294179A Pending JPS5595886A (en) | 1979-01-17 | 1979-01-17 | Neutron detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595886A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01253683A (en) * | 1988-03-31 | 1989-10-09 | Matsushita Electric Ind Co Ltd | Neutron detector and neutron detector array |
| JPH02242190A (en) * | 1989-03-15 | 1990-09-26 | Matsushita Electric Ind Co Ltd | Semiconductor radiation sensor and sensor array |
| US5321269A (en) * | 1990-04-24 | 1994-06-14 | Hitachi, Ltd. | Neutron individual dose meter, neutron dose rate meter, neutron detector and its method of manufacture |
| US5726453A (en) * | 1996-09-30 | 1998-03-10 | Westinghouse Electric Corporation | Radiation resistant solid state neutron detector |
| US5880471A (en) * | 1995-09-01 | 1999-03-09 | Forschungszentrum Julich | Neutron detector |
-
1979
- 1979-01-17 JP JP294179A patent/JPS5595886A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01253683A (en) * | 1988-03-31 | 1989-10-09 | Matsushita Electric Ind Co Ltd | Neutron detector and neutron detector array |
| JPH02242190A (en) * | 1989-03-15 | 1990-09-26 | Matsushita Electric Ind Co Ltd | Semiconductor radiation sensor and sensor array |
| US5321269A (en) * | 1990-04-24 | 1994-06-14 | Hitachi, Ltd. | Neutron individual dose meter, neutron dose rate meter, neutron detector and its method of manufacture |
| USRE35908E (en) * | 1990-04-24 | 1998-09-29 | Hitachi, Ltd. | Neutron individual dose meter neutron dose rate meter, neutron detector and its method of manufacture |
| US5880471A (en) * | 1995-09-01 | 1999-03-09 | Forschungszentrum Julich | Neutron detector |
| US5726453A (en) * | 1996-09-30 | 1998-03-10 | Westinghouse Electric Corporation | Radiation resistant solid state neutron detector |
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