JPS5522824A - Semiconductor photo detection device - Google Patents

Semiconductor photo detection device

Info

Publication number
JPS5522824A
JPS5522824A JP9504678A JP9504678A JPS5522824A JP S5522824 A JPS5522824 A JP S5522824A JP 9504678 A JP9504678 A JP 9504678A JP 9504678 A JP9504678 A JP 9504678A JP S5522824 A JPS5522824 A JP S5522824A
Authority
JP
Japan
Prior art keywords
zone
light
terminal
epitaxial growth
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9504678A
Other languages
Japanese (ja)
Inventor
Susumu Hata
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9504678A priority Critical patent/JPS5522824A/en
Publication of JPS5522824A publication Critical patent/JPS5522824A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain the light detection output with large gain through the reduced floating capacity by developing the epitaxial growth on the semiconductor substrate and forming the two resistances serving as the light derection element and load respectively within that epitaxial growth.
CONSTITUTION: On an N-type semiconductor substrate 1 developed is an epitaxial growth to form an N-type layer 2 with higher specific resistance than that of the substrate. Within the layer 2 formed are P-type zones 5 and 6 with same impurity atom concentration through the diffusion, and each zone 5 and 6 serves as a resistance R and a light detection element D respectively. Next, a terminal 8 is provided at the zone 6, a wiring 9 is connected between the zones 5 and 6, and then a terminal 10 is attached to the wiring 9. Also on the backside formed is a terminal 7. Thus, the light detection element D of PIN-type photodiode and the resistance R as load hold their positions within one substrate. After that a light L is radiated into the zone 5. By doing so, the output voltage caused by the incidence of the light into the zone 5 can be taken out through the terminals 8 and 10, and thus obtained voltage level becomes higher due to the structure where the floating capacity is reduced possibly small.
COPYRIGHT: (C)1980,JPO&Japio
JP9504678A 1978-08-04 1978-08-04 Semiconductor photo detection device Pending JPS5522824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9504678A JPS5522824A (en) 1978-08-04 1978-08-04 Semiconductor photo detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9504678A JPS5522824A (en) 1978-08-04 1978-08-04 Semiconductor photo detection device

Publications (1)

Publication Number Publication Date
JPS5522824A true JPS5522824A (en) 1980-02-18

Family

ID=14127115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9504678A Pending JPS5522824A (en) 1978-08-04 1978-08-04 Semiconductor photo detection device

Country Status (1)

Country Link
JP (1) JPS5522824A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047583A (en) * 1973-07-20 1975-04-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047583A (en) * 1973-07-20 1975-04-28

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