JPS5548992A - Semiconductor luminous element and its manufacturing method - Google Patents

Abstract

PURPOSE: To efficiently confine a luminosity inside of an activation layer and to obtain a luminous element of planer structure, by embedding the activation layer into No.1 and No.2 semiconductor layers of n-type and connecting a p-type layer section to the activation layer along the interface between No.1 and No.2 semiconductor layers of p-type.

CONSTITUTION: By providing an n-type Ga_1-xAl_xAs 2 and a p-type GaAs 3 on a GaAs base plate 1, Zn is diffused onto a part of the layer 3 to prepare a p-layer 8 containing a part of the layer 2. The layer 3 is selectively etched to reduce thickness to less than half except a mesa section, and after all the sections except the mesa section are melt-packed, an n-type Ga_1-xAl_xAs 4 and an n-type GaAs 5 are piled in layer. Diffusion is started from a part of surface of the layer 5, which is not facing the layer 3, to a layer 8 to prepare a p-layer 9. By thermal diffusion at the time of formation of the layers 4, 5 and 9, the layers 8 and 3 become connected with each other. And then, by etching a pn joint of the layer 5, electrodes 6 and 7 are attached onto p, n sections of the layer 5. By using this structure, the layer 3 is embedded into the layer 2 and 4, current can be gathered into the layer 3 by difference of potential barrier height, a luminosity can be efficiently confined and, besides, a planer structure can be formed.

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