WO2017109835A1 - Solar cell manufacturing method - Google Patents
Solar cell manufacturing method Download PDFInfo
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- WO2017109835A1 WO2017109835A1 PCT/JP2015/085706 JP2015085706W WO2017109835A1 WO 2017109835 A1 WO2017109835 A1 WO 2017109835A1 JP 2015085706 W JP2015085706 W JP 2015085706W WO 2017109835 A1 WO2017109835 A1 WO 2017109835A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 62
- 238000010304 firing Methods 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a method for manufacturing a solar cell that converts light energy into electric power.
- Patent Document 1 In order to convert light energy into electric power with high efficiency, a double-sided light-receiving solar cell having an n-type silicon wafer is proposed in Patent Document 1.
- the emitter In a solar cell having an n-type silicon wafer, the emitter is a p-type diffusion layer.
- the concentration of impurities in the p-type diffusion layer is 5 ⁇ 10 19 (atoms / cm 3 ) or less.
- the p-type side electrode that is in contact with the p-type diffusion layer is formed of an alloy of silver and aluminum. It's not easy. If the contact between the p-type diffusion layer and the p-type side electrode is insufficient, the conversion efficiency decreases.
- the present invention has been made in view of the above, and an object of the present invention is to obtain a method for manufacturing a solar cell in which the contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode is high.
- the present invention includes a step of forming a p-type diffusion layer on one side of an n-type silicon wafer, and silver on the outside of the p-type diffusion layer.
- the present invention there is an effect that it is possible to obtain a method for manufacturing a solar cell with high contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode.
- FIG. 1 The flowchart which shows the outline of the procedure of the manufacturing method of the solar cell of Embodiment 1.
- FIG. The figure which shows the relationship between time at the time of performing a baking process, and baking temperature
- FIG. 1 is a flowchart showing an outline of the procedure of the method for manufacturing the solar cell of the first embodiment.
- an n-type silicon wafer is prepared (S1).
- a p-type diffusion layer is formed on one side of the silicon wafer (S2).
- a doping paste containing n-type component impurities is pasted by printing (S3).
- the p-type diffusion layer is covered with a protective film.
- the silicon wafer is heated to diffuse the n-type component impurities contained in the doping paste to the other surface side of the silicon wafer. Thereby, an n-type diffusion layer is formed on the other surface side of the silicon wafer (S4).
- the p-type diffusion layer is covered with the p-type side passivation film, and the n-type diffusion layer is covered with the n-type side passivation film (S5).
- a p-type side paste for forming a p-type side electrode is provided on the p-type side passivation film by printing, and an n-type side for forming an n-type side electrode on the n-type side passivation film.
- a paste is provided by printing (S6).
- the p-type side paste and the n-type side paste are baked (S7), and the p-type side electrode is formed from the p-type side paste and the n-type side electrode is formed from the n-type side paste.
- FIG. 2 is a diagram for explaining the manufacturing method of solar cell 20 of Embodiment 1 in more detail. Furthermore, FIG. 2 has shown the cross section of the thing in the middle of manufacture of the solar cell 20 about each of several processes in the manufacturing method of the solar cell 20, or the cross section of the thing after completion
- an n-type silicon wafer 1 is prepared.
- irregularities are formed on both surfaces of the silicon wafer 1.
- the silicon wafer 1 is etched with a solution composed of an alkaline solution and an additive.
- an alkaline solution is a potassium hydroxide solution or a sodium hydroxide solution.
- An example of an additive is isopropyl alcohol. Note that in FIG. 2A, the unevenness is not shown for easy explanation.
- a p-type diffusion layer 2 is formed on one side of the silicon wafer 1.
- the p-type diffusion layer 2 is formed by any one of the vapor phase diffusion method, the solid phase diffusion method, and the ion implantation method.
- a pn junction is formed.
- the impurity concentration in the p-type diffusion layer 2 is 5 ⁇ 10 19 (atoms / cm 3 ) or less.
- the lower limit of the impurity concentration in the p-type diffusion layer 2 is 1 ⁇ 10 18 (atoms / cm 3 ).
- An example of the impurity in the p-type diffusion layer 2 is a boron atom.
- the surface of the silicon wafer 1 where the p-type diffusion layer 2 is not formed that is, the other surface of the silicon wafer 1 contains n-type component impurities.
- the doping paste 3 is pasted by printing.
- An example of an n-type component impurity is a phosphorus atom.
- the p-type diffusion layer 2 is covered with a protective film. Note that in FIG. 2C, a protective film is not shown for easy explanation.
- the silicon wafer 1 is put into a thermal diffusion furnace, the silicon wafer 1 is heated while introducing an impurity gas into the thermal diffusion furnace, and the n-type component impurities contained in the doping paste 3 are removed from the other surface of the silicon wafer 1.
- the n-type diffusion layer 4 is formed on the other surface side of the silicon wafer 1.
- the portion of the n-type diffusion layer 4 that has been in contact with the doping paste 3 is a high-concentration n-type diffusion layer 5 in which the concentration of the impurity of the n-type component is higher than the periphery of the portion.
- the n-type diffusion layer 4 may be formed by a method other than the method using the doping paste 3.
- An example of the impurity in the n-type diffusion layer 4 is a phosphorus atom.
- the p-type diffusion layer 2 is covered with the p-type side passivation film 6 and the n-type diffusion layer 4 is covered with the n-type side passivation film 7.
- the p-type side passivation film 6 is a film made of aluminum oxide, silicon dioxide, or silicon nitride.
- a p-type side paste 8 made of silver and aluminum is formed on the side opposite to the side where the p-type diffusion layer 2 is located with reference to the p-type side passivation film 6. Is provided by printing. That is, the p-type side paste 8 composed of silver and aluminum is provided outside the p-type diffusion layer 2.
- an n-type side paste 9 made of silver is provided by printing on the side opposite to the side where the n-type diffusion layer 4 is located with respect to the n-type side passivation film 7. That is, the n-type side paste 9 made of silver is provided outside the n-type diffusion layer 4.
- the firing object 10 is fired to form the p-type side electrode 11 from the p-type side paste 8 and the n-type side electrode 12 from the n-type side paste 9 as shown in FIG. To do.
- the manufacture of the solar cell 20 ends.
- the temperature is within a range from 550 ° C to 700 ° C.
- the p-type side paste 8 and the n-type side paste 9 are fired over a period of 20 seconds or more at a temperature within a range of 20 ° C. above and below the reference temperature from either reference.
- the p-type side paste 8 and the n-type side paste 9 are baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer.
- the constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature.
- the p-type side electrode 11 in contact with the p-type diffusion layer 2 is formed from the p-type side paste 8.
- the p-type side paste 8 is baked at a constant temperature within a range from 550 ° C. to 700 ° C. over a period of 20 seconds or longer as described above.
- the period during which the temperature is maintained is 60 seconds or less.
- the firing object 10 is heated so that the temperature of the firing object 10 exceeds 700 ° C. That is, the firing object 10 is fired to form the n-type side electrode 12 at a temperature higher than the temperature at which the p-type side electrode 11 is formed from the p-type side paste 8. Thereby, the n-type side electrode 12 in contact with the n-type diffusion layer 4 is formed from the n-type side paste 9.
- the highest temperature when firing the firing object 10 is a temperature for forming the n-type side electrode 12 made of silver, and is 800 ° C., for example.
- FIG. 3 is a diagram showing the relationship between the time for performing the firing step and the firing temperature.
- the firing step is a step of firing the firing object 10.
- the firing temperature is the temperature of the firing object 10 when firing the firing object 10.
- Step P for forming the p-type side electrode 11 is performed before Step N for forming the n-type side electrode 12.
- the firing object 10 is fired at a constant temperature within a range from 550 ° C. to 700 ° C. over a period X of 20 seconds or longer.
- the contact property between the p-type side electrode 11 constituted by silver and aluminum and the p-type diffusion layer 2 can be enhanced.
- the conventional baking temperature is 750 ° C. to 850 ° C. and relatively high, but the baking temperature in the first embodiment is 550 ° C. to 700 ° C.
- the temperature is in the range up to.
- the p-type side paste 8 does not contain aluminum, the contact between the p-type diffusion layer 2 and the p-type side electrode 11 may be insufficient.
- the p-type side paste 8 containing aluminum is baked at a constant temperature in the range of 550 ° C. to 700 ° C., aluminum reacts with silicon in the p-type diffusion layer 2 to cause aluminum atoms and silicon atoms to react. By bonding, it is considered that the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is enhanced.
- the p-type side paste 8 is formed by baking the p-type side paste 8
- the p-type side paste 8 is rapidly heated using a heater. Therefore, aluminum contained in the p-type side paste 8 and silicon in the p-type diffusion layer 2 are used. Does not react sufficiently, and the bonding force between aluminum atoms and silicon atoms is weak.
- the p-type side paste 8 is baked over a period X of 20 seconds or more at a constant temperature in the range of 550 ° C. to 700 ° C. Therefore, it is considered that the bonding force between the aluminum atom and the silicon atom is increased, and as a result, the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is increased.
- the firing object 10 is arranged so that the n-type side paste 9 is positioned closer to the heater than the p-type side paste 8.
- FIG. 4 is a cross-sectional view of a firing apparatus 40 for firing the firing object 10.
- the baking apparatus 40 includes a chamber 41 and a heater 42, and the heater 42 is provided on a wall surface vertically above the chamber 41.
- the firing object 10 is arranged so that the p-type side paste 8 is positioned vertically below the n-type side paste 9.
- the influence of the heat from the heater 42 on the p-type side passivation film 6 can be reduced, and as a result, the possibility that the p-type side passivation film 6 is damaged can be reduced.
- the p-type side paste 8 is baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer.
- the constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature.
- the p-type side paste 8 when the firing object 10 is fired using the heater 42, the p-type side paste 8 is positioned farther from the heater 42 than the n-type side paste 9.
- the heater 42 when the heater 42 is provided on the vertically upper wall surface inside the chamber 41, the p-type paste 8 is positioned vertically below the n-type paste 9. Thereby, the possibility that the p-type side passivation film 6 is damaged can be reduced.
- the configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.
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Abstract
A solar cell manufacturing method of the present invention includes: a step for forming a p-type diffusion layer on one surface side of an n-type silicon wafer; a step for providing, on the outer side of the p-type diffusion layer, a p-type side paste configured from silver and aluminum; and a step for firing the p-type side paste for a period X equal to or longer than 20 seconds at a temperature, which is within a range of 550-700°C, and is within a zone 20°C above and below a temperature set as reference, and forming a p-type side electrode using the p-type side paste, said p-type side electrode being in contact with the p-type diffusion layer.
Description
本発明は、光エネルギを電力に変換する太陽電池の製造方法に関する。
The present invention relates to a method for manufacturing a solar cell that converts light energy into electric power.
光エネルギを電力に高効率で変換するために、n型のシリコンウェハを有する両面受光型太陽電池が特許文献1において提案されている。n型のシリコンウェハを有する太陽電池では、エミッタはp型拡散層である。
In order to convert light energy into electric power with high efficiency, a double-sided light-receiving solar cell having an n-type silicon wafer is proposed in Patent Document 1. In a solar cell having an n-type silicon wafer, the emitter is a p-type diffusion layer.
n型のシリコンウェハを有する太陽電池では、光エネルギから電力への変換効率を上げるために、エミッタであるp型拡散層における不純物の濃度を低くすることが重要である。具体的には、変換効率を上げるために、p型拡散層における不純物の濃度を5×1019(atoms/cm3)以下にすることが重要である。p型拡散層と接触するp型側電極は銀とアルミニウムとの合金によって形成されるが、上記のような不純物の濃度が低いp型拡散層とp型側電極とを良好に接触させることは容易ではない。p型拡散層とp型側電極との接触が不十分であると、変換効率は低下する。
In a solar cell having an n-type silicon wafer, it is important to reduce the concentration of impurities in the p-type diffusion layer as an emitter in order to increase the conversion efficiency from light energy to electric power. Specifically, in order to increase the conversion efficiency, it is important that the impurity concentration in the p-type diffusion layer is 5 × 10 19 (atoms / cm 3 ) or less. The p-type side electrode that is in contact with the p-type diffusion layer is formed of an alloy of silver and aluminum. It's not easy. If the contact between the p-type diffusion layer and the p-type side electrode is insufficient, the conversion efficiency decreases.
本発明は、上記に鑑みてなされたものであって、不純物の濃度が低いp型拡散層とp型側電極との接触性が高い太陽電池の製造方法を得ることを目的とする。
The present invention has been made in view of the above, and an object of the present invention is to obtain a method for manufacturing a solar cell in which the contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode is high.
上述した課題を解決し、目的を達成するために、本発明は、n型のシリコンウェハの一方の面の側にp型拡散層を形成するステップと、前記p型拡散層の外側に銀とアルミニウムとによって構成されるp型側ペーストを設けるステップと、550℃から700℃までの範囲内の温度であって、いずれかの温度を基準として前記基準から上下20℃の帯域内の温度で20秒以上の期間にわたって前記p型側ペーストを焼成し、前記p型側ペーストから、前記p型拡散層に接するp型側電極を形成するステップとを含むことを特徴とする。
In order to solve the above-described problems and achieve the object, the present invention includes a step of forming a p-type diffusion layer on one side of an n-type silicon wafer, and silver on the outside of the p-type diffusion layer. A step of providing a p-type side paste composed of aluminum, and a temperature within a range from 550 ° C. to 700 ° C., with a temperature within a range of 20 ° C. above and below the reference 20 ° C. Firing the p-type side paste over a period of seconds or more, and forming a p-type side electrode in contact with the p-type diffusion layer from the p-type side paste.
本発明によれば、不純物の濃度が低いp型拡散層とp型側電極との接触性が高い太陽電池の製造方法を得ることができるという効果を奏する。
According to the present invention, there is an effect that it is possible to obtain a method for manufacturing a solar cell with high contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode.
以下に、本発明の実施の形態にかかる太陽電池の製造方法を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。
Hereinafter, a method for manufacturing a solar cell according to an embodiment of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.
実施の形態1.
図1は、実施の形態1の太陽電池の製造方法の手順の概略を示すフローチャートである。図1に示す通り、まず、n型のシリコンウェハを用意する(S1)。次に、シリコンウェハの一方の面の側にp型拡散層を形成する(S2)。次に、シリコンウェハの他方の面に、n型拡散層を形成することを目的として、n型の成分の不純物を含むドーピングペーストを印刷によってペーストする(S3)。その後、p型拡散層を保護フィルムによって覆う。次に、シリコンウェハを加熱し、ドーピングペーストに含まれるn型の成分の不純物をシリコンウェハの他方の面の側に拡散させる。それにより、シリコンウェハの他方の面の側にn型拡散層を形成する(S4)。Embodiment 1 FIG.
FIG. 1 is a flowchart showing an outline of the procedure of the method for manufacturing the solar cell of the first embodiment. As shown in FIG. 1, first, an n-type silicon wafer is prepared (S1). Next, a p-type diffusion layer is formed on one side of the silicon wafer (S2). Next, for the purpose of forming an n-type diffusion layer on the other surface of the silicon wafer, a doping paste containing n-type component impurities is pasted by printing (S3). Thereafter, the p-type diffusion layer is covered with a protective film. Next, the silicon wafer is heated to diffuse the n-type component impurities contained in the doping paste to the other surface side of the silicon wafer. Thereby, an n-type diffusion layer is formed on the other surface side of the silicon wafer (S4).
図1は、実施の形態1の太陽電池の製造方法の手順の概略を示すフローチャートである。図1に示す通り、まず、n型のシリコンウェハを用意する(S1)。次に、シリコンウェハの一方の面の側にp型拡散層を形成する(S2)。次に、シリコンウェハの他方の面に、n型拡散層を形成することを目的として、n型の成分の不純物を含むドーピングペーストを印刷によってペーストする(S3)。その後、p型拡散層を保護フィルムによって覆う。次に、シリコンウェハを加熱し、ドーピングペーストに含まれるn型の成分の不純物をシリコンウェハの他方の面の側に拡散させる。それにより、シリコンウェハの他方の面の側にn型拡散層を形成する(S4)。
FIG. 1 is a flowchart showing an outline of the procedure of the method for manufacturing the solar cell of the first embodiment. As shown in FIG. 1, first, an n-type silicon wafer is prepared (S1). Next, a p-type diffusion layer is formed on one side of the silicon wafer (S2). Next, for the purpose of forming an n-type diffusion layer on the other surface of the silicon wafer, a doping paste containing n-type component impurities is pasted by printing (S3). Thereafter, the p-type diffusion layer is covered with a protective film. Next, the silicon wafer is heated to diffuse the n-type component impurities contained in the doping paste to the other surface side of the silicon wafer. Thereby, an n-type diffusion layer is formed on the other surface side of the silicon wafer (S4).
次に、p型拡散層をp型側パッシベーション膜で覆うと共に、n型拡散層をn型側パッシベーション膜で覆う(S5)。次に、p型側パッシベーション膜の上にp型側電極を形成するためのp型側ペーストを印刷によって設けると共に、n型側パッシベーション膜の上にn型側電極を形成するためのn型側ペーストを印刷によって設ける(S6)。最後に、p型側ペースト及びn型側ペーストを焼成し(S7)、p型側ペーストからp型側電極を形成すると共に、n型側ペーストからn型側電極を形成する。
Next, the p-type diffusion layer is covered with the p-type side passivation film, and the n-type diffusion layer is covered with the n-type side passivation film (S5). Next, a p-type side paste for forming a p-type side electrode is provided on the p-type side passivation film by printing, and an n-type side for forming an n-type side electrode on the n-type side passivation film. A paste is provided by printing (S6). Finally, the p-type side paste and the n-type side paste are baked (S7), and the p-type side electrode is formed from the p-type side paste and the n-type side electrode is formed from the n-type side paste.
図1を用いて実施の形態1の太陽電池の製造方法の手順の概略を説明したが、図2を用いて実施の形態1の太陽電池の製造方法をより詳細に説明する。図2は、実施の形態1の太陽電池20の製造方法をより詳細に説明するための図である。更に言うと、図2は、太陽電池20の製造方法における複数の工程のそれぞれについての太陽電池20の製造途中の物の断面又は製造終了後の物の断面を示している。
Although the outline of the procedure of the manufacturing method of the solar cell of Embodiment 1 was demonstrated using FIG. 1, the manufacturing method of the solar cell of Embodiment 1 is demonstrated in detail using FIG. FIG. 2 is a diagram for explaining the manufacturing method of solar cell 20 of Embodiment 1 in more detail. Furthermore, FIG. 2 has shown the cross section of the thing in the middle of manufacture of the solar cell 20 about each of several processes in the manufacturing method of the solar cell 20, or the cross section of the thing after completion | finish of manufacture.
まず、図2(A)に示すように、n型のシリコンウェハ1を用意する。次に、シリコンウェハ1に入射する光の反射率を低減するために、シリコンウェハ1の両方の表面に凹凸を形成する。具体的には、アルカリ溶液と添加物とによって構成される溶液によりシリコンウェハ1をエッチングする。それにより、シリコンウェハ1の両方の表面にランダムピラミッド構造の凹凸を形成する。アルカリ溶液の一例は、水酸化カリウム溶液又は水酸化ナトリウム溶液である。添加物の一例は、イソプロピルアルコールである。なお、図2(A)では説明を簡単に行うために凹凸は示されていない。
First, as shown in FIG. 2A, an n-type silicon wafer 1 is prepared. Next, in order to reduce the reflectance of light incident on the silicon wafer 1, irregularities are formed on both surfaces of the silicon wafer 1. Specifically, the silicon wafer 1 is etched with a solution composed of an alkaline solution and an additive. Thereby, irregularities having a random pyramid structure are formed on both surfaces of the silicon wafer 1. An example of the alkaline solution is a potassium hydroxide solution or a sodium hydroxide solution. An example of an additive is isopropyl alcohol. Note that in FIG. 2A, the unevenness is not shown for easy explanation.
次に、図2(B)に示すように、シリコンウェハ1の一方の面の側にp型拡散層2を形成する。気相拡散法、固相拡散法及びイオン注入法のいずれかによって、p型拡散層2を形成する。p型拡散層2を形成することにより、pn接合が形成される。光エネルギから電力への高い変換効率を得るために、p型拡散層2における不純物の濃度は5×1019(atoms/cm3)以下である。p型拡散層2における不純物の濃度の下限は1×1018(atoms/cm3)である。p型拡散層2における不純物の一例は、ボロン原子である。
Next, as shown in FIG. 2B, a p-type diffusion layer 2 is formed on one side of the silicon wafer 1. The p-type diffusion layer 2 is formed by any one of the vapor phase diffusion method, the solid phase diffusion method, and the ion implantation method. By forming the p-type diffusion layer 2, a pn junction is formed. In order to obtain a high conversion efficiency from light energy to electric power, the impurity concentration in the p-type diffusion layer 2 is 5 × 10 19 (atoms / cm 3 ) or less. The lower limit of the impurity concentration in the p-type diffusion layer 2 is 1 × 10 18 (atoms / cm 3 ). An example of the impurity in the p-type diffusion layer 2 is a boron atom.
次に、図2(C)に示すように、シリコンウェハ1のp型拡散層2が形成されていない側の面に、すなわちシリコンウェハ1の他方の面に、n型の成分の不純物を含むドーピングペースト3を印刷によってペーストする。n型の成分の不純物の一例は、リン原子である。その後、p型拡散層2を保護フィルムによって覆う。なお、図2(C)では説明を簡単に行うために保護フィルムは示されていない。
Next, as shown in FIG. 2C, the surface of the silicon wafer 1 where the p-type diffusion layer 2 is not formed, that is, the other surface of the silicon wafer 1 contains n-type component impurities. The doping paste 3 is pasted by printing. An example of an n-type component impurity is a phosphorus atom. Thereafter, the p-type diffusion layer 2 is covered with a protective film. Note that in FIG. 2C, a protective film is not shown for easy explanation.
そして、シリコンウェハ1を熱拡散炉に入れ、不純物ガスを熱拡散炉に導入しながらシリコンウェハ1を加熱し、ドーピングペースト3に含まれるn型の成分の不純物をシリコンウェハ1の他方の面の側で拡散させる。それにより、図2(D)に示すように、シリコンウェハ1の他方の面の側に、n型拡散層4が形成される。n型拡散層4のうちのドーピングペースト3と接触していた部位は、その部位の周辺よりもn型の成分の不純物の濃度が高い高濃度n型拡散層5である。なお、n型拡散層4は、ドーピングペースト3を用いる方法以外の方法によって形成されてもよい。n型拡散層4における不純物の一例は、リン原子である。
Then, the silicon wafer 1 is put into a thermal diffusion furnace, the silicon wafer 1 is heated while introducing an impurity gas into the thermal diffusion furnace, and the n-type component impurities contained in the doping paste 3 are removed from the other surface of the silicon wafer 1. Spread on the side. Thereby, as shown in FIG. 2D, the n-type diffusion layer 4 is formed on the other surface side of the silicon wafer 1. The portion of the n-type diffusion layer 4 that has been in contact with the doping paste 3 is a high-concentration n-type diffusion layer 5 in which the concentration of the impurity of the n-type component is higher than the periphery of the portion. The n-type diffusion layer 4 may be formed by a method other than the method using the doping paste 3. An example of the impurity in the n-type diffusion layer 4 is a phosphorus atom.
次に、図2(E)に示すように、p型拡散層2をp型側パッシベーション膜6で覆うと共に、n型拡散層4をn型側パッシベーション膜7で覆う。p型側パッシベーション膜6は、酸化アルミニウム、二酸化ケイ素又は窒化シリコンによって構成される膜である。
Next, as shown in FIG. 2E, the p-type diffusion layer 2 is covered with the p-type side passivation film 6 and the n-type diffusion layer 4 is covered with the n-type side passivation film 7. The p-type side passivation film 6 is a film made of aluminum oxide, silicon dioxide, or silicon nitride.
次に、図2(F)に示すように、p型側パッシベーション膜6を基準としてp型拡散層2が位置する側と反対の側に、銀とアルミニウムとによって構成されるp型側ペースト8を印刷によって設ける。つまり、p型拡散層2の外側に銀とアルミニウムとによって構成されるp型側ペースト8を設ける。加えて、n型側パッシベーション膜7を基準としてn型拡散層4が位置する側と反対の側に、銀によって構成されるn型側ペースト9を印刷によって設ける。つまり、n型拡散層4の外側に銀によって構成されるn型側ペースト9を設ける。説明を簡単に行うために、図2(F)に示すp型側ペースト8及びn型側ペースト9が設けられたシリコンウェハ1を「焼成対象物10」と定義する。
Next, as shown in FIG. 2 (F), a p-type side paste 8 made of silver and aluminum is formed on the side opposite to the side where the p-type diffusion layer 2 is located with reference to the p-type side passivation film 6. Is provided by printing. That is, the p-type side paste 8 composed of silver and aluminum is provided outside the p-type diffusion layer 2. In addition, an n-type side paste 9 made of silver is provided by printing on the side opposite to the side where the n-type diffusion layer 4 is located with respect to the n-type side passivation film 7. That is, the n-type side paste 9 made of silver is provided outside the n-type diffusion layer 4. In order to simplify the explanation, the silicon wafer 1 provided with the p-type side paste 8 and the n-type side paste 9 shown in FIG.
次に、焼成対象物10を焼成し、図2(G)に示すように、p型側ペースト8からp型側電極11を形成すると共に、n型側ペースト9からn型側電極12を形成する。それにより、太陽電池20の製造は終了する。焼成対象物10を焼成する際、銀とアルミニウムとによって構成されるp型側電極11とシリコンウェハ1とを良好に接触させるために、まず、550℃から700℃までの範囲内の温度であって、いずれかの温度を基準として基準から上下20℃の帯域内の温度で20秒以上の期間にわたってp型側ペースト8及びn型側ペースト9を焼成する。
Next, the firing object 10 is fired to form the p-type side electrode 11 from the p-type side paste 8 and the n-type side electrode 12 from the n-type side paste 9 as shown in FIG. To do. Thereby, the manufacture of the solar cell 20 ends. When firing the object 10 to be fired, in order to bring the p-type side electrode 11 composed of silver and aluminum into good contact with the silicon wafer 1, first, the temperature is within a range from 550 ° C to 700 ° C. Then, the p-type side paste 8 and the n-type side paste 9 are fired over a period of 20 seconds or more at a temperature within a range of 20 ° C. above and below the reference temperature from either reference.
つまり、550℃から700℃までの範囲内の一定の温度で20秒以上の期間にわたってp型側ペースト8及びn型側ペースト9を焼成する。一定の温度は、いずれかの温度を基準として基準から上下20℃の帯域内の温度である。それにより、p型側ペースト8から、p型拡散層2に接するp型側電極11を形成する。なお、p型側電極11を形成するために行う焼成では、上述の通り20秒以上の期間にわたって550℃から700℃までの範囲内の一定の温度でp型側ペースト8を焼成するが、一定の温度を保つ期間は60秒以下である。
That is, the p-type side paste 8 and the n-type side paste 9 are baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer. The constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature. Thereby, the p-type side electrode 11 in contact with the p-type diffusion layer 2 is formed from the p-type side paste 8. In the baking performed to form the p-type side electrode 11, the p-type side paste 8 is baked at a constant temperature within a range from 550 ° C. to 700 ° C. over a period of 20 seconds or longer as described above. The period during which the temperature is maintained is 60 seconds or less.
その後、焼成対象物10の温度が700℃を超える温度となるように焼成対象物10を加熱する。すなわち、p型側ペースト8からp型側電極11を形成する際の温度より高い温度で、n型側電極12を形成するために焼成対象物10を焼成する。それにより、n型側ペースト9から、n型拡散層4に接するn型側電極12を形成する。焼成対象物10を焼成する際の最高の温度は、銀によって構成されるn型側電極12を形成するための温度であって、例えば800℃である。
Thereafter, the firing object 10 is heated so that the temperature of the firing object 10 exceeds 700 ° C. That is, the firing object 10 is fired to form the n-type side electrode 12 at a temperature higher than the temperature at which the p-type side electrode 11 is formed from the p-type side paste 8. Thereby, the n-type side electrode 12 in contact with the n-type diffusion layer 4 is formed from the n-type side paste 9. The highest temperature when firing the firing object 10 is a temperature for forming the n-type side electrode 12 made of silver, and is 800 ° C., for example.
図3は、焼成工程を実行する際の時間と焼成温度との関係を示す図である。焼成工程は、焼成対象物10を焼成する工程である。焼成温度は、焼成対象物10を焼成する際の焼成対象物10の温度である。図3に示すように、p型側電極11を形成するステップPを、n型側電極12を形成するステップNよりも前に行う。p型側電極11を形成するステップPでは、550℃から700℃までの範囲内の一定の温度で20秒以上の期間Xにわたって焼成対象物10を焼成する。それにより、銀とアルミニウムとによって構成されるp型側電極11とp型拡散層2との接触性を高めることができる。
FIG. 3 is a diagram showing the relationship between the time for performing the firing step and the firing temperature. The firing step is a step of firing the firing object 10. The firing temperature is the temperature of the firing object 10 when firing the firing object 10. As shown in FIG. 3, Step P for forming the p-type side electrode 11 is performed before Step N for forming the n-type side electrode 12. In Step P for forming the p-type side electrode 11, the firing object 10 is fired at a constant temperature within a range from 550 ° C. to 700 ° C. over a period X of 20 seconds or longer. Thereby, the contact property between the p-type side electrode 11 constituted by silver and aluminum and the p-type diffusion layer 2 can be enhanced.
p型側ペースト8を焼成してp型側電極11を形成する場合、従来の焼成温度は750℃から850℃であって比較的高いが、実施の形態1における焼成温度は550℃から700℃までの範囲の温度である。p型側ペースト8がアルミニウムを含まない場合、p型拡散層2とp型側電極11との接触は不十分である場合がある。550℃から700℃までの範囲内の一定の温度でアルミニウムを含むp型側ペースト8を焼成する場合、アルミニウムとp型拡散層2のうちのシリコンとが反応してアルミニウム原子とシリコン原子とが結合することによって、p型拡散層2とp型側電極11との接触性が高くなると考えられる。
When the p-type side electrode 8 is formed by baking the p-type side paste 8, the conventional baking temperature is 750 ° C. to 850 ° C. and relatively high, but the baking temperature in the first embodiment is 550 ° C. to 700 ° C. The temperature is in the range up to. When the p-type side paste 8 does not contain aluminum, the contact between the p-type diffusion layer 2 and the p-type side electrode 11 may be insufficient. When the p-type side paste 8 containing aluminum is baked at a constant temperature in the range of 550 ° C. to 700 ° C., aluminum reacts with silicon in the p-type diffusion layer 2 to cause aluminum atoms and silicon atoms to react. By bonding, it is considered that the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is enhanced.
p型側ペースト8を焼成してp型側電極11を形成する場合、従来ではヒータを用いて急速に加熱するので、p型側ペースト8に含まれるアルミニウムとp型拡散層2のうちのシリコンとが十分に反応せず、そのためアルミニウム原子とシリコン原子との結合力が弱い。それに対し、実施の形態1では、550℃から700℃までの範囲内の一定の温度で20秒以上の期間Xにわたってp型側ペースト8を焼成する。そのため、アルミニウム原子とシリコン原子との結合力が高くなり、ひいてはp型拡散層2とp型側電極11との接触性が高くなると考えられる。
When the p-type side electrode 8 is formed by baking the p-type side paste 8, conventionally, the p-type side paste 8 is rapidly heated using a heater. Therefore, aluminum contained in the p-type side paste 8 and silicon in the p-type diffusion layer 2 are used. Does not react sufficiently, and the bonding force between aluminum atoms and silicon atoms is weak. On the other hand, in the first embodiment, the p-type side paste 8 is baked over a period X of 20 seconds or more at a constant temperature in the range of 550 ° C. to 700 ° C. Therefore, it is considered that the bonding force between the aluminum atom and the silicon atom is increased, and as a result, the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is increased.
ヒータを用いてp型側ペースト8を焼成する場合、p型側ペースト8がヒータの近くに位置するとp型側ペースト8を焼成するためのヒータからの熱によってp型側パッシベーション膜6が損傷する可能性がある。そのため、ヒータを用いて焼成対象物10を焼成する場合、p型側ペースト8よりもn型側ペースト9がヒータに近く位置するように焼成対象物10を配置する。
When baking the p-type side paste 8 using a heater, if the p-type side paste 8 is positioned near the heater, the p-type side passivation film 6 is damaged by heat from the heater for baking the p-type side paste 8. there is a possibility. Therefore, when firing the firing object 10 using a heater, the firing object 10 is arranged so that the n-type side paste 9 is positioned closer to the heater than the p-type side paste 8.
図4は、焼成対象物10を焼成するための焼成装置40の断面図である。図4に示す通り、焼成装置40はチャンバ41とヒータ42とを有しており、ヒータ42はチャンバ41の内部の鉛直上方の壁面に設けられている。図4の焼成装置40を用いて焼成対象物10を焼成する場合、p型側ペースト8がn型側ペースト9よりも鉛直下方に位置するように焼成対象物10を配置する。それにより、ヒータ42からの熱のp型側パッシベーション膜6への影響を小さくすることができ、ひいてはp型側パッシベーション膜6が損傷する可能性を低下させることができる。
FIG. 4 is a cross-sectional view of a firing apparatus 40 for firing the firing object 10. As shown in FIG. 4, the baking apparatus 40 includes a chamber 41 and a heater 42, and the heater 42 is provided on a wall surface vertically above the chamber 41. When firing the firing object 10 using the firing apparatus 40 of FIG. 4, the firing object 10 is arranged so that the p-type side paste 8 is positioned vertically below the n-type side paste 9. Thereby, the influence of the heat from the heater 42 on the p-type side passivation film 6 can be reduced, and as a result, the possibility that the p-type side passivation film 6 is damaged can be reduced.
上述の通り、実施の形態1では、550℃から700℃までの範囲内の一定の温度で20秒以上の期間にわたってp型側ペースト8を焼成する。一定の温度は、いずれかの温度を基準として基準から上下20℃の帯域内の温度である。それにより、p型側ペースト8から形成されるp型側電極11とp型拡散層2との接触性を高めることができる。その結果、光エネルギから電力への変換効率を高くすることができる。
As described above, in Embodiment 1, the p-type side paste 8 is baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer. The constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature. Thereby, the contact property between the p-type side electrode 11 formed from the p-type side paste 8 and the p-type diffusion layer 2 can be enhanced. As a result, the conversion efficiency from light energy to electric power can be increased.
加えて、実施の形態1では、ヒータ42を用いて焼成対象物10を焼成する場合、p型側ペースト8をn型側ペースト9よりもヒータ42から離して位置させる。例えば、ヒータ42がチャンバ41の内部の鉛直上方の壁面に設けられている場合、p型側ペースト8をn型側ペースト9よりも鉛直下方に位置させる。それにより、p型側パッシベーション膜6が損傷する可能性を低下させることができる。
In addition, in the first embodiment, when the firing object 10 is fired using the heater 42, the p-type side paste 8 is positioned farther from the heater 42 than the n-type side paste 9. For example, when the heater 42 is provided on the vertically upper wall surface inside the chamber 41, the p-type paste 8 is positioned vertically below the n-type paste 9. Thereby, the possibility that the p-type side passivation film 6 is damaged can be reduced.
以上の実施の形態に示した構成は、本発明の内容の一例を示すものであり、別の公知の技術と組み合わせることも可能であるし、本発明の要旨を逸脱しない範囲で、構成の一部を省略又は変更することも可能である。
The configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.
1 シリコンウェハ、2 p型拡散層、3 ドーピングペースト、4 n型拡散層、5 高濃度n型拡散層、6 p型側パッシベーション膜、7 n型側パッシベーション膜、8 p型側ペースト、9 n型側ペースト、10 焼成対象物、11 p型側電極、12 n型側電極、20 太陽電池、40 焼成装置、41 チャンバ、42 ヒータ。
1 silicon wafer, 2 p-type diffusion layer, 3 doping paste, 4 n-type diffusion layer, 5 high-concentration n-type diffusion layer, 6 p-type side passivation film, 7 n-type side passivation film, 8 p-type side paste, 9 n Mold side paste, 10 firing object, 11 p-type side electrode, 12 n-type side electrode, 20 solar cell, 40 firing device, 41 chamber, 42 heater.
Claims (3)
- n型のシリコンウェハの一方の面の側にp型拡散層を形成するステップと、
前記p型拡散層の外側に銀とアルミニウムとによって構成されるp型側ペーストを設けるステップと、
550℃から700℃までの範囲内の温度であって、いずれかの温度を基準として前記基準から上下20℃の帯域内の温度で20秒以上の期間にわたって前記p型側ペーストを焼成し、前記p型側ペーストから、前記p型拡散層に接するp型側電極を形成するステップと
を含むことを特徴とする太陽電池の製造方法。 forming a p-type diffusion layer on one side of an n-type silicon wafer;
Providing a p-type side paste composed of silver and aluminum outside the p-type diffusion layer;
The p-type side paste is baked over a period of 20 seconds or more at a temperature within a range of 20 ° C. above and below the reference from any one of the temperatures within a range from 550 ° C. to 700 ° C., forming a p-type side electrode in contact with the p-type diffusion layer from a p-type side paste. - 前記p型側電極を形成するステップにおいて、前記p型側ペーストをヒータによって焼成する場合、前記p型側ペーストを、前記n型のシリコンウェハの他方の面の側に設けられるn型側ペーストよりも前記ヒータから離して位置させることを特徴とする請求項1に記載の太陽電池の製造方法。 In the step of forming the p-type side electrode, when the p-type side paste is baked by a heater, the p-type side paste is more than an n-type side paste provided on the other surface side of the n-type silicon wafer. The solar cell manufacturing method according to claim 1, wherein the solar cell is positioned away from the heater.
- 前記p型拡散層を形成するステップの後かつ前記p型側電極を形成するステップの前に行うステップであって、前記n型のシリコンウェハの他方の面の側にn型拡散層を形成するステップと、
前記n型拡散層を形成するステップの後かつ前記p型側電極を形成するステップの前に行うステップであって、前記n型拡散層の外側に銀によって構成されるn型側ペーストを設けるステップと、
前記p型側電極を形成するステップの後に行うステップであって、前記n型側ペーストを焼成し、前記n型側ペーストから、前記n型拡散層に接するn型側電極を形成するステップとを更に含み、
前記n型側電極を形成するステップにおける前記n型側ペーストを焼成する温度は、前記p型側電極を形成するステップにおける前記p型側ペーストを焼成する温度よりも高い
ことを特徴とする請求項1又は請求項2に記載の太陽電池の製造方法。 A step performed after the step of forming the p-type diffusion layer and before the step of forming the p-type side electrode, and forming the n-type diffusion layer on the other surface side of the n-type silicon wafer. Steps,
A step performed after the step of forming the n-type diffusion layer and before the step of forming the p-type side electrode, and a step of providing an n-type side paste made of silver outside the n-type diffusion layer When,
Performing after the step of forming the p-type side electrode, firing the n-type side paste, and forming an n-type side electrode in contact with the n-type diffusion layer from the n-type side paste; In addition,
The temperature for firing the n-type side paste in the step of forming the n-type side electrode is higher than the temperature for firing the p-type side paste in the step of forming the p-type side electrode. The manufacturing method of the solar cell of Claim 1 or Claim 2.
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