TWI622182B - Solar cell manufacturing method - Google Patents
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- TWI622182B TWI622182B TW105139420A TW105139420A TWI622182B TW I622182 B TWI622182 B TW I622182B TW 105139420 A TW105139420 A TW 105139420A TW 105139420 A TW105139420 A TW 105139420A TW I622182 B TWI622182 B TW I622182B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 62
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 238000010304 firing Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
太陽電池之製造方法係包含：在n型矽晶圓之某一邊之面，形成p型擴散層之步驟；在n型矽晶圓之其他邊之面，形成n型擴散層之步驟；在p型擴散層之外側，設置藉由銀和鋁而構成之p型側糊膏之步驟；在n型擴散層之外側，設置藉由銀而構成之n型側糊膏之步驟；以及，使得設置p型側糊膏和n型側糊膏之n型矽晶圓之溫度，成為550℃開始至700℃為止之範圍內之溫度，在以任何一個溫度來作為基準而由基準開始之上下20℃之區域內之溫度，經過及保持在20秒以上之期間X，然後，加熱n型矽晶圓而成為超過700℃之溫度，燒成p型側糊膏和n型側糊膏之步驟。 The manufacturing method of the solar cell comprises the steps of: forming a p-type diffusion layer on one side of the n-type germanium wafer; forming an n-type diffusion layer on the other side of the n-type germanium wafer; a step of forming a p-type side paste composed of silver and aluminum on the outer side of the diffusion layer; a step of providing an n-type side paste composed of silver on the outer side of the n-type diffusion layer; The temperature of the n-type germanium wafer of the p-type side paste and the n-type side paste is a temperature within a range from 550 ° C to 700 ° C, and is 20 ° C above the reference at any temperature. The temperature in the region is maintained and maintained for a period of 20 seconds or more, and then the n-type silicon wafer is heated to a temperature exceeding 700 ° C to fire the p-type side paste and the n-type side paste.
Description
本發明係關於一種光能轉換成為電力之太陽電池之製造方法。 The present invention relates to a method of manufacturing a solar cell in which light energy is converted into electricity.
為了以高效率，來轉換光能，成為電力，因此，在專利文獻1，提議具有n型矽晶圓之雙面受光型太陽電池。在具有n型矽晶圓之太陽電池，射極係p型擴散層。 In order to convert light energy with high efficiency and to generate electric power, Patent Document 1 proposes a double-sided light receiving type solar cell having an n-type germanium wafer. In a solar cell having an n-type germanium wafer, an emitter-type p-type diffusion layer.
【專利文獻1】國際公開第2014/098016號 [Patent Document 1] International Publication No. 2014/098016
在具有n型矽晶圓之太陽電池，為了提高由光能轉換至電力之轉換效率，因此，降低成為射極之p型擴散層之不純物濃度係變得重要。具體地說，為了提高轉換效率，因此，p型擴散層之不純物濃度成為5×1019(atoms/cm3)以下係變得重要。接觸到p型擴散層之p型側電極係藉由銀和鋁之合金而形成，但是，不容易使得前述之不純物濃度變低之p型擴散層和p型側電極呈良好地接觸。在p型擴散層和p型側電極之間之接觸呈不充分之時，降低轉換效率。 In a solar cell having an n-type germanium wafer, in order to improve the conversion efficiency from light energy to electric power, it is important to reduce the impurity concentration of the p-type diffusion layer that becomes the emitter. Specifically, in order to improve the conversion efficiency, it is important that the impurity concentration of the p-type diffusion layer is 5 × 10 19 (atoms/cm 3 ) or less. The p-type side electrode that is in contact with the p-type diffusion layer is formed by an alloy of silver and aluminum, but the p-type diffusion layer and the p-type side electrode which do not easily cause the aforementioned impurity concentration to become low are in good contact. When the contact between the p-type diffusion layer and the p-type side electrode is insufficient, the conversion efficiency is lowered.
本發明係有鑑於上述而形成，以得到提高不純物濃度變低之p型擴散層和p型側電極之間之接觸性之太陽電池之製造方法為目的。 The present invention has been made in view of the above, and is intended to provide a method for producing a solar cell in which contact between a p-type diffusion layer having a low impurity concentration and a p-type side electrode is improved.
為了解決前述之課題而達成目的，因此，本發明，其特徵為包含：在n型矽晶圓之某一邊之面，形成p型擴散層之步驟；在前述n型矽晶圓之其他邊之面，形成n型擴散層之步驟；在前述p型擴散層之外側，設置藉由銀和鋁而構成之p型側糊膏之步驟；在前述n型擴散層之外側，設置藉由銀而構成之n型側糊膏之步驟；以及，使得設置前述p型側糊膏和前述n型側糊膏之前述n型矽晶圓之溫度，成為550℃開始至700℃為止之範圍內之溫度，在以任何一個溫度來作為基準而由前述基準開始之上下20℃之區域內之溫度，經過及保持在20秒以上之期間，然後，加熱前述n型矽晶圓而成為超過700℃之溫度，燒成前述p型側糊膏和前述n型側糊膏之步驟。 In order to solve the above problems, the present invention is characterized in that the present invention includes a step of forming a p-type diffusion layer on one side of an n-type germanium wafer, and on the other side of the n-type germanium wafer. a step of forming an n-type diffusion layer; a step of forming a p-type side paste composed of silver and aluminum on the outer side of the p-type diffusion layer; and providing silver on the outer side of the n-type diffusion layer a step of forming the n-type side paste; and setting a temperature of the n-type germanium wafer of the p-type side paste and the n-type side paste to a temperature within a range from 550 ° C to 700 ° C The temperature in the region of 20 ° C above and below the reference from any of the above temperatures is maintained and maintained for a period of 20 seconds or longer, and then the n-type germanium wafer is heated to a temperature exceeding 700 ° C. And the step of firing the p-side paste and the n-side paste.
如果是藉由本發明的話，則達到所謂可以得到提高不純物濃度變低之p型擴散層和p型側電極之間之接觸性之太陽電池之製造方法之效果。 According to the present invention, the effect of the method for producing a solar cell in which the contact between the p-type diffusion layer and the p-type side electrode having a low impurity concentration is improved can be obtained.
1‧‧‧矽晶圓 1‧‧‧矽 wafer
2‧‧‧p型擴散層 2‧‧‧p type diffusion layer
3‧‧‧摻雜糊膏 3‧‧‧Doped paste
4‧‧‧n型擴散層 4‧‧‧n type diffusion layer
5‧‧‧高濃度n型擴散層 5‧‧‧High concentration n-type diffusion layer
6‧‧‧p型側鈍化膜 6‧‧‧p type side passivation film
7‧‧‧n型側鈍化膜 7‧‧‧n type side passivation film
8‧‧‧p型側糊膏 8‧‧‧p type side paste
9‧‧‧n型側糊膏 9‧‧‧n type side paste
10‧‧‧燒成對象物 10‧‧‧burning objects
11‧‧‧p型側電極 11‧‧‧p-type side electrode
12‧‧‧n型側電極 12‧‧‧n type side electrode
20‧‧‧太陽電池 20‧‧‧Solar battery
40‧‧‧燒成裝置 40‧‧‧Burning device
41‧‧‧處理室 41‧‧‧Processing room
42‧‧‧加熱器 42‧‧‧heater
圖1係顯示實施形態1之太陽電池之製造方法之程序概略之流程圖。 Fig. 1 is a flow chart showing the outline of the procedure for manufacturing the solar cell of the first embodiment.
圖2係用以更加詳細地說明實施形態1之太陽電池之製造 方法之圖。 Figure 2 is a view for explaining the manufacture of the solar cell of the first embodiment in more detail. Diagram of the method.
圖3係顯示在實行燒成製程之際之時間和燒成溫度之關係之圖。 Fig. 3 is a graph showing the relationship between the time and the firing temperature at the time of performing the firing process.
圖4係用以將燒成對象物予以燒成之燒成裝置之剖面圖。 Fig. 4 is a cross-sectional view showing a firing device for firing a baked object.
在以下，根據圖式而詳細地說明本發明之實施形態之太陽電池之製造方法。此外，並非由於該實施形態而限定本發明。 Hereinafter, a method of manufacturing a solar cell according to an embodiment of the present invention will be described in detail based on the drawings. Further, the present invention is not limited by the embodiment.
圖1係顯示實施形態1之太陽電池之製造方法之程序概略之流程圖。正如圖1所示，首先，準備n型矽晶圓(S1)。接著，在矽晶圓之某一邊之面側，形成p型擴散層(S2)。接著，在矽晶圓之其他邊之面，以形成n型擴散層，來作為目的，藉由印刷而塗糊包含n型成分不純物之摻雜糊膏(S3)。然後，藉由保護薄膜而覆蓋p型擴散層。接著，加熱矽晶圓，使得包含於摻雜糊膏之n型成分不純物，擴散至矽晶圓之其他邊之面側。藉此而在矽晶圓之其他邊之面側，形成n型擴散層(S4)。 Fig. 1 is a flow chart showing the outline of the procedure for manufacturing the solar cell of the first embodiment. As shown in Fig. 1, first, an n-type germanium wafer (S1) is prepared. Next, a p-type diffusion layer (S2) is formed on the side of one side of the germanium wafer. Next, an n-type diffusion layer is formed on the other side of the tantalum wafer, and a doped paste containing an n-type impurity is coated by printing (S3). Then, the p-type diffusion layer is covered by the protective film. Next, the germanium wafer is heated so that the n-type impurity contained in the doped paste is diffused to the other side of the tantalum wafer. Thereby, an n-type diffusion layer (S4) is formed on the other side of the tantalum wafer.
接著，藉由p型側鈍化膜而覆蓋p型擴散層，同時，藉由n型側鈍化膜而覆蓋n型擴散層(S5)。接著，在p型側鈍化膜之上，藉由印刷而設置用以形成p型側電極之p型側糊膏，同時，在n型側鈍化膜之上，藉由印刷而設置用以形成n型側電極之n型側糊膏(S6)。最後，燒成p型側糊膏和n型側糊膏(S7)，由p型側糊膏來形成p型側電極，同時， 由n型側糊膏來形成n型側電極。 Next, the p-type diffusion layer is covered by the p-type side passivation film, and the n-type diffusion layer (S5) is covered by the n-type side passivation film. Next, on the p-type passivation film, a p-type side paste for forming a p-type side electrode is provided by printing, and at the same time, on the n-type side passivation film, it is provided by printing to form n. The n-side paste of the side electrode (S6). Finally, the p-type side paste and the n-type side paste (S7) are fired, and the p-type side paste is formed by the p-type side paste, and An n-type side electrode is formed from an n-type side paste.
使用圖1，說明實施形態1之太陽電池之製造方法之程序概略，但是，使用圖2而更加詳細地說明實施形態1之太陽電池之製造方法。圖2係用以更加詳細地說明實施形態1之太陽電池20之製造方法之圖。更進一步地說，圖2係顯示關於太陽電池20之製造方法之複數個製程之各個之太陽電池20之製造途中之物件之剖面或製造結束後之物件之剖面。 The outline of the procedure for manufacturing the solar cell of the first embodiment will be described with reference to Fig. 1. However, the method for manufacturing the solar cell of the first embodiment will be described in more detail with reference to Fig. 2 . Fig. 2 is a view for explaining in more detail the method of manufacturing the solar cell 20 of the first embodiment. More specifically, FIG. 2 is a cross-sectional view of the article during the manufacture of the solar cell 20 for each of a plurality of processes of the manufacturing method of the solar cell 20, or a cross section of the article after the completion of the manufacture.
首先，正如圖2(A)所示，準備n型矽晶圓1。接著，為了減低入射至矽晶圓1之光反射率，因此，在矽晶圓1之兩邊之表面，形成凹凸。具體地說，在藉由鹼溶液和添加物而構成之溶液，蝕刻矽晶圓1。藉此而在矽晶圓1之兩邊之表面，形成隨機稜錐體構造之凹凸。鹼溶液之一例係氫氧化鉀溶液或氫氧化鈉溶液。添加物之一例係異丙醇。此外，在圖2(A)，為了簡單地進行說明，因此，無顯示凹凸。 First, as shown in FIG. 2(A), an n-type germanium wafer 1 is prepared. Next, in order to reduce the light reflectance incident on the germanium wafer 1, irregularities are formed on the surfaces of both sides of the germanium wafer 1. Specifically, the tantalum wafer 1 is etched by a solution composed of an alkali solution and an additive. Thereby, irregularities of the random pyramid structure are formed on the surfaces of both sides of the tantalum wafer 1. One example of the alkali solution is a potassium hydroxide solution or a sodium hydroxide solution. One example of the additive is isopropyl alcohol. In addition, in FIG. 2(A), for the sake of simplicity, there is no display unevenness.
接著，正如圖2(B)所示，在矽晶圓1之某一邊之面側，形成p型擴散層2。藉由氣相擴散法、固相擴散法和離子注入法之任何一種而形成p型擴散層2。藉由形成p型擴散層2而形成pn接合。為了得到由光能轉換成為電力之高轉換效率，因此，p型擴散層2之不純物濃度成為5×1019(atoms/cm3)以下。p型擴散層2之不純物濃度之下限係1×1018(atoms/cm3)。p型擴散層2之不純物之一例係硼原子。 Next, as shown in FIG. 2(B), a p-type diffusion layer 2 is formed on the side of one side of the germanium wafer 1. The p-type diffusion layer 2 is formed by any one of a vapor phase diffusion method, a solid phase diffusion method, and an ion implantation method. A pn junction is formed by forming the p-type diffusion layer 2. In order to obtain high conversion efficiency from conversion of light energy to electric power, the impurity concentration of the p-type diffusion layer 2 is 5 × 10 19 (atoms/cm 3 ) or less. The lower limit of the impurity concentration of the p-type diffusion layer 2 is 1 × 10 18 (atoms/cm 3 ). One of the impurities of the p-type diffusion layer 2 is a boron atom.
接著，正如圖2(C)所示，在矽晶圓1之無形成p型擴散層2之側面，也就是在矽晶圓1之其他邊之面，藉由 印刷而塗糊包含n型成分不純物之摻雜糊膏3。n型成分不純物之一例係磷原子。然後，藉由保護薄膜而覆蓋p型擴散層2。此外，在圖2(C)，為了簡單地進行說明，因此，無顯示保護薄膜。 Next, as shown in FIG. 2(C), on the side of the germanium wafer 1 where the p-type diffusion layer 2 is not formed, that is, on the other side of the germanium wafer 1, by The doped paste 3 containing the n-type impurity is printed by printing. One of the n-type component impurities is a phosphorus atom. Then, the p-type diffusion layer 2 is covered by the protective film. In addition, in FIG. 2(C), for the sake of simplicity, the protective film is not displayed.
接著，將矽晶圓1放入至熱擴散爐，導入不純物氣體至熱擴散爐，同時，加熱矽晶圓1，在矽晶圓1之其他邊之面側，擴散包含於摻雜糊膏3之n型成分不純物。藉此而正如圖2(D)所示，在矽晶圓1之其他邊之面側，形成n型擴散層4。在n型擴散層4中之接觸到摻雜糊膏3之部位係n型成分不純物之濃度還更加高於該部位周邊之高濃度n型擴散層5。此外，n型擴散層4係可以藉由使用摻雜糊膏3之方法以外之方法而形成。n型擴散層4之不純物之一例係磷原子。 Next, the germanium wafer 1 is placed in a thermal diffusion furnace, and the impurity gas is introduced into the thermal diffusion furnace, and the germanium wafer 1 is heated, and the diffusion is contained in the doped paste 3 on the other side of the tantalum wafer 1. The n-type component is not pure. Thereby, as shown in FIG. 2(D), the n-type diffusion layer 4 is formed on the other side of the tantalum wafer 1. The concentration of the n-type component impurity in the portion of the n-type diffusion layer 4 that is in contact with the doped paste 3 is further higher than the high-concentration n-type diffusion layer 5 around the portion. Further, the n-type diffusion layer 4 can be formed by a method other than the method of doping the paste 3. One of the impurities of the n-type diffusion layer 4 is a phosphorus atom.
接著，正如圖2(E)所示，藉由p型側鈍化膜6而覆蓋p型擴散層2，同時，藉由n型側鈍化膜7而覆蓋n型擴散層4。p型側鈍化膜6係藉由氧化鋁、二氧化矽或氮化矽而構成之膜。 Next, as shown in FIG. 2(E), the p-type diffusion layer 2 is covered by the p-type passivation film 6, and the n-type diffusion layer 4 is covered by the n-type side passivation film 7. The p-type passivation film 6 is a film composed of aluminum oxide, hafnium oxide or tantalum nitride.
接著，正如圖2(F)所示，在以p型側鈍化膜6作為基準而相反於p型擴散層2位處之側之相反側，藉由印刷而設置以銀和鋁來構成之p型側糊膏8。也就是說，在p型擴散層2之外側，設置藉由銀和鋁而構成之p型側糊膏8。此外，在以n型側鈍化膜7作為基準而相反於n型擴散層4位處之側之相反側，藉由印刷而設置以銀來構成之n型側糊膏9。也就是說，在n型擴散層4之外側，設置藉由銀而構成之n型側糊膏9。為了簡單地進行說明，因此，將圖2(F)所示之設置p 型側糊膏8和n型側糊膏9之矽晶圓1，定義成為「燒成對象物10」。 Next, as shown in FIG. 2(F), on the opposite side to the side where the p-type passivation film 6 is used as a reference and opposite to the position of the p-type diffusion layer 2, silver and aluminum are provided by printing. Type side paste 8. That is, on the outer side of the p-type diffusion layer 2, a p-type side paste 8 composed of silver and aluminum is provided. Further, on the side opposite to the side where the n-type passivation film 7 is used as a reference and opposite to the position of the n-type diffusion layer 4, the n-side paste 9 made of silver is provided by printing. That is, on the outer side of the n-type diffusion layer 4, an n-type side paste 9 composed of silver is provided. For the sake of simplicity, the setting shown in Fig. 2(F) is p. The wafer 1 of the side paste 8 and the n-side paste 9 is defined as "the object 10 to be fired".
接著，將燒成對象物10予以燒成，正如圖2(G)所示，由p型側糊膏8來形成p型側電極11，同時，由n型側糊膏9來形成n型側電極12。藉此而結束太陽電池20之製造。在將燒成對象物10予以燒成之際，為了使得藉由銀和鋁而構成之p型側電極11及矽晶圓1呈良好地接觸，因此，首先，成為550℃開始至700℃為止之範圍內之溫度，在以任何一個溫度來作為基準而由基準開始之上下20℃之區域內之溫度，經過20秒以上之期間，燒成p型側糊膏8和n型側糊膏9。 Next, the object to be fired 10 is fired, and as shown in FIG. 2(G), the p-type side electrode 11 is formed by the p-type side paste 8, and the n-type side is formed by the n-type side paste 9. Electrode 12. Thereby, the manufacture of the solar cell 20 is ended. When the object to be fired 10 is fired, the p-type side electrode 11 and the tantalum wafer 1 which are formed of silver and aluminum are in good contact with each other. Therefore, first, the temperature is from 550 ° C to 700 ° C. The temperature in the range is a temperature in a region of 20 ° C above the reference starting from any reference temperature, and the p-side paste 8 and the n-side paste 9 are fired over a period of 20 seconds or longer. .
也就是說，在由550℃開始至700℃為止之範圍內之一定溫度，經過20秒以上之期間，燒成p型側糊膏8和n型側糊膏9。在換句話說時，在由550℃開始至700℃為止之範圍內之一定溫度，經過20秒以上之期間，保持燒成對象物10之溫度，將燒成對象物10予以燒成。一定溫度係以任何一個溫度來作為基準而由基準開始之上下20℃之區域內之溫度。藉此而由p型側糊膏8，來形成接合於p型擴散層2之p型側電極11。此外，在用以形成p型側電極11而進行之燒成，正如前面之敘述，經過20秒以上之期間，在由550℃開始至700℃為止之範圍內之一定溫度，燒成p型側糊膏8，但是，保持一定溫度之期間係60秒以下。 That is, the p-type side paste 8 and the n-type side paste 9 are fired over a period of 20 seconds or more at a constant temperature in the range from 550 ° C to 700 ° C. In other words, the temperature of the object to be fired 10 is maintained for a period of 20 seconds or longer at a constant temperature in the range from 550 ° C to 700 ° C, and the object to be fired 10 is fired. A certain temperature is the temperature in the region of 20 ° C above and below the reference starting from any one of the temperatures. Thereby, the p-type side electrode 11 bonded to the p-type diffusion layer 2 is formed by the p-type side paste 8. Further, in the firing for forming the p-type side electrode 11, as described above, the p-side is fired at a constant temperature in the range from 550 ° C to 700 ° C over a period of 20 seconds or longer. Paste 8, however, the period of maintaining a certain temperature is 60 seconds or less.
然後，使得燒成對象物10之溫度，成為超過700℃之溫度而加熱燒成對象物10。也就是說，在更加高於由p 型側糊膏8來形成p型側電極11之際之溫度之高溫度，為了形成n型側電極12而將燒成對象物10予以燒成。藉此而由n型側糊膏9，來形成接合於n型擴散層4之n型側電極12。在將燒成對象物10予以燒成之際之最高溫度係用以形成藉由銀而構成之n型側電極12之溫度，例如800℃。 Then, the temperature of the object to be fired 10 is set to a temperature exceeding 700 ° C to heat the object 10 to be fired. In other words, it is higher than by p The temperature of the temperature at which the p-side electrode 11 is formed by the side paste 8 is high, and the object 10 to be fired is fired to form the n-side electrode 12. Thereby, the n-type side electrode 12 bonded to the n-type diffusion layer 4 is formed by the n-type side paste 9. The maximum temperature at which the object to be fired 10 is fired is used to form a temperature of the n-type side electrode 12 formed of silver, for example, 800 °C.
圖3係顯示在實行燒成製程之際之時間和燒成溫度之關係之圖。燒成製程係將燒成對象物10予以燒成之製程。燒成溫度係在將燒成對象物10予以燒成之際之燒成對象物10之溫度。正如圖3所示，在形成n型側電極12之步驟N之前，還先進行形成p型側電極11之步驟P。在形成p型側電極11之步驟P，在由550℃開始至700℃為止之範圍內之一定溫度，經過20秒以上之期間X，將燒成對象物10予以燒成。可以藉此而提高以銀及鋁來構成之p型側電極11和p型擴散層2之間之接觸性。 Fig. 3 is a graph showing the relationship between the time and the firing temperature at the time of performing the firing process. The firing process is a process in which the object 10 to be fired is fired. The firing temperature is the temperature of the object to be fired 10 when the object to be fired 10 is fired. As shown in FIG. 3, before the step N of forming the n-type side electrode 12, the step P of forming the p-type side electrode 11 is also performed first. In the step P of forming the p-type side electrode 11, the object to be fired 10 is fired over a period of 20 seconds or more at a constant temperature in the range from 550 ° C to 700 ° C. Thereby, the contact between the p-type side electrode 11 and the p-type diffusion layer 2 composed of silver and aluminum can be improved.
在燒成p型側糊膏8而形成p型側電極11之狀態下，習知之燒成溫度係由750℃開始至850℃之比較高之溫度，但是，實施形態1之燒成溫度係由550℃開始至700℃為止之範圍之溫度。在p型側糊膏8無包含鋁之狀態下，有p型擴散層2和p型側電極11之間之接觸呈不充分之狀態發生。認為在成為由550℃開始至700℃為止之範圍內之一定溫度而燒成包含鋁之p型側糊膏8之狀態下，藉由鋁和p型擴散層2中之矽，發生反應，結合鋁原子和矽原子，而提高p型擴散層2和p型側電極11之間之接觸性。 In the state in which the p-type side paste 8 is fired to form the p-type side electrode 11, the conventional firing temperature is a relatively high temperature from 750 ° C to 850 ° C. However, the firing temperature of the first embodiment is The temperature in the range from 550 ° C to 700 ° C. In the state where the p-type side paste 8 does not contain aluminum, the contact between the p-type diffusion layer 2 and the p-type side electrode 11 is insufficient. In the state in which the p-type side paste 8 containing aluminum is fired at a constant temperature in the range from 550 ° C to 700 ° C, the reaction occurs in the aluminum and the p-type diffusion layer 2, and the reaction is carried out. The aluminum atom and the germanium atom increase the contact between the p-type diffusion layer 2 and the p-type side electrode 11.
在燒成p型側糊膏8而形成p型側電極11之狀態 下，在向來，使用加熱器而急速地進行加熱，因此，包含於p型側糊膏8之鋁和p型擴散層2中之矽係無法充分地發生反應，所以，減弱鋁原子和矽原子之結合力。相對於此，在實施形態1，在由550℃開始至700℃為止之範圍內之一定溫度，經過20秒以上之期間X，燒成p型側糊膏8。因此，認為提高鋁原子和矽原子之結合力，進而提高p型擴散層2和p型側電極11之間之接觸性。 a state in which the p-type side paste 11 is formed by firing the p-type side paste 8 In the past, the heater is rapidly heated by using the heater. Therefore, the lanthanum contained in the aluminum of the p-type side paste 8 and the p-type diffusion layer 2 cannot sufficiently react, so that the aluminum atom and the ruthenium atom are weakened. The combination of strength. On the other hand, in the first embodiment, the p-type side paste 8 is fired over a period of 20 seconds or longer at a constant temperature in a range from 550 ° C to 700 ° C. Therefore, it is considered that the bonding force between the aluminum atom and the germanium atom is increased, and the contact between the p-type diffusion layer 2 and the p-type side electrode 11 is further improved.
在使用加熱器而燒成p型側糊膏8之狀態下，在p型側糊膏8位處於加熱器之附近時，很可能會由於來自用以燒成p型側糊膏8之加熱器之熱能而損傷p型側鈍化膜6。因此，在使用加熱器而將燒成對象物10予以燒成之狀態下，配置燒成對象物10而使得n型側糊膏9，比起p型側糊膏8，還更加位處在加熱器之附近。 In the state in which the p-type side paste 8 is fired by using a heater, when the p-side paste 8 is in the vicinity of the heater, it is likely to be due to the heater from which the p-side paste 8 is fired. The p-type side passivation film 6 is damaged by the thermal energy. Therefore, in the state in which the object to be fired 10 is fired by using a heater, the object to be fired 10 is placed so that the n-side paste 9 is further heated than the p-side paste 8 Near the device.
圖4係用以將燒成對象物10予以燒成之燒成裝置40之剖面圖。正如圖4所示，燒成裝置40係具有處理室41和加熱器42，加熱器42係設置在處理室41之內部鉛直上方之壁面。在使用圖4之燒成裝置40而將燒成對象物10予以燒成之狀態下，配置燒成對象物10而使得p型側糊膏8，比起n型側糊膏9，還更加地位處在鉛直下方。可以藉此而減小來自加熱器42之熱能對於p型側鈍化膜6之影響，進而可以降低損傷p型側鈍化膜6之可能性。 FIG. 4 is a cross-sectional view of the firing device 40 for firing the object 10 to be fired. As shown in FIG. 4, the firing device 40 has a processing chamber 41 and a heater 42, and the heater 42 is disposed on a wall surface vertically above the processing chamber 41. In the state in which the object to be fired 10 is fired by using the firing device 40 of FIG. 4, the object 10 to be fired is placed so that the p-side paste 8 is further positioned than the n-side paste 9 It is vertically below. Thereby, the influence of the thermal energy from the heater 42 on the p-type side passivation film 6 can be reduced, and the possibility of damaging the p-type side passivation film 6 can be reduced.
正如前面之敘述，在實施形態1，在由550℃開始至700℃為止之範圍內之一定溫度，經過20秒以上之期間\，燒成p型側糊膏8。一定溫度係以任何一個溫度來作為基準而 由基準開始之上下20℃之區域內之溫度。可以藉此而提高由p型側糊膏8來形成之p型側電極11和p型擴散層2之間之接觸性。結果，可以提高由光能轉換成為電力之轉換效率。 As described above, in the first embodiment, the p-type side paste 8 is fired over a period of 20 seconds or more at a constant temperature in the range from 550 ° C to 700 ° C. A certain temperature is based on any temperature. The temperature in the region of 20 ° C above the baseline. Thereby, the contact between the p-type side electrode 11 and the p-type diffusion layer 2 formed by the p-type side paste 8 can be improved. As a result, the conversion efficiency from conversion of light energy to electric power can be improved.
此外，在實施形態1，在使用加熱器42而將燒成對象物10予以燒成之狀態下，使得p型側糊膏8，比起n型側糊膏9，還更加位處在離開加熱器42之位置。例如在加熱器42設置於處理室41之內部鉛直上方之壁面之狀態下，使得p型側糊膏8，比起n型側糊膏9，還更加地位處在鉛直下方。可以藉此而降低損傷p型側鈍化膜6之可能性。 Further, in the first embodiment, in the state in which the object to be fired 10 is fired by using the heater 42, the p-side paste 8 is further displaced from the heating than the n-side paste 9. The position of the device 42. For example, in a state where the heater 42 is disposed on the wall surface vertically above the inside of the processing chamber 41, the p-side paste 8 is further positioned vertically lower than the n-side paste 9. Thereby, the possibility of damaging the p-type side passivation film 6 can be reduced.
以上之實施形態之所顯示之構造係顯示本發明內容之一例，也可以組合於其他之先前技術，並且，也可以在無脫離本發明要旨之範圍內，省略或變更構造之一部分。 The structure shown in the above embodiments shows an example of the present invention, and may be combined with other prior art, and a part of the configuration may be omitted or modified without departing from the gist of the present invention.
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